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Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective

Electronic Materials Letters, 2022, 18(2), , pp.113-128

2022

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Origin of efficiency droop in GaN-based light-emitting diodes

Applied physics letters, 2007-10, Vol.91 (18), p.183507-183507-3

2007

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Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates

Applied physics letters, 2017-05, Vol.110 (19)

2017

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Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Applied physics letters, 2010-09, Vol.97 (13), p.133507-133507-3

2010

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Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

Applied physics letters, 2014-03, Vol.104 (10)

2014

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A discrete core-shell-like micro-light-emitting diode array grown on sapphire nano-membranes

Scientific reports, 2020-05, Vol.10 (1), p.7506-7506, Article 7506

2020

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Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Scientific reports, 2019-06, Vol.9 (1), p.8282, Article 8282

2019

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Origin of extra diffraction spots for high crystalline alpha-Ga2O3

AIP advances, 2023-02, Vol.13 (2), p.025148-025148-6

2023

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Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Applied physics letters, 2009-01, Vol.94 (1), p.011113-011113-3

2009

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Analysis of high-power packages for phosphor-based white-light-emitting diodes

Applied physics letters, 2005-06, Vol.86 (24), p.243505-243505-3

2005

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On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Applied physics letters, 2011-01, Vol.98 (3), p.033506-033506-3

2011

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Efficient Alternating Current Operated White Light-Emitting Diode Chip

IEEE photonics technology letters, 2009-01, Vol.21 (1), p.33-35

2009

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High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes

IEEE photonics technology letters, 2007-03, Vol.19 (5), p.336-338

2007

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Epitaxial growth of single-crystalline AlN layer on Si(111) by DC magnetron sputtering at room temperature

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6), p.60306

2018

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Real-Time Tunable Gas Sensing Platform Based on SnO2 Nanoparticles Activated by Blue Micro-Light-Emitting Diodes

Nano-micro letters, 2024-12, Vol.16 (1), p.261-17, Article 261

2024

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Luminescence properties related anti-phase domain of alpha-Ga2O3

APL materials, 2023-05, Vol.11 (5), p.051113-051113-8

2023

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Ge surface-energy-driven secondary grain growth via two-step annealing

Thin solid films, 2014-11, Vol.571, p.108-113

2014

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Characteristics of dotlike green satellite emission in GaInN light emitting diodes

Applied physics letters, 2011-01, Vol.98 (2)

2011

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Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design

IEEE journal of quantum electronics, 2007-08, Vol.43 (8), p.625-632

2007

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Electrical characteristics of contacts to thin film N-polar n -type GaN

Applied physics letters, 2008-11, Vol.93 (19), p.192106-192106-3

2008

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Ohmic and degradation mechanisms of Ag contacts on p -type GaN

Applied physics letters, 2005-02, Vol.86 (6), p.062104-062104-3

2005

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Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup

Japanese Journal of Applied Physics, 2005-01, Vol.44 (5L), p.L649

2005

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Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition

Journal of crystal growth, 2014-09, Vol.401, p.518-522

2014

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Electrical Characteristics of Metal Contacts to Laser-Irradiated N-Polar n-Type GaN

IEEE electron device letters, 2009-04, Vol.30 (4), p.319-321

2009

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920-nm Vertical-External-Cavity Surface-Emitting Lasers With a Slope Efficiency of 58% at Room Temperature

IEEE photonics technology letters, 2007-10, Vol.19 (20), p.1655-1657

2007

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Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective

Origin of efficiency droop in GaN-based light-emitting diodes

Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

A discrete core-shell-like micro-light-emitting diode array grown on sapphire nano-membranes

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Origin of extra diffraction spots for high crystalline alpha-Ga2O3

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Analysis of high-power packages for phosphor-based white-light-emitting diodes

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Efficient Alternating Current Operated White Light-Emitting Diode Chip

High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes

Epitaxial growth of single-crystalline AlN layer on Si(111) by DC magnetron sputtering at room temperature

Real-Time Tunable Gas Sensing Platform Based on SnO2 Nanoparticles Activated by Blue Micro-Light-Emitting Diodes

Luminescence properties related anti-phase domain of alpha-Ga2O3

Ge surface-energy-driven secondary grain growth via two-step annealing

Characteristics of dotlike green satellite emission in GaInN light emitting diodes

Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design

Electrical characteristics of contacts to thin film N-polar n -type GaN

Ohmic and degradation mechanisms of Ag contacts on p -type GaN

Strongly Enhanced Phosphor Efficiency in GaInN White Light-Emitting Diodes Using Remote Phosphor Configuration and Diffuse Reflector Cup

Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition

Electrical Characteristics of Metal Contacts to Laser-Irradiated N-Polar n-Type GaN

920-nm Vertical-External-Cavity Surface-Emitting Lasers With a Slope Efficiency of 58% at Room Temperature

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