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Preliminary operational aspects of microwave-powered airship drone

International journal of micro air vehicles, 2019, Vol.11, p.175682931986136

2019

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Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire

Journal of crystal growth, 2008-05, Vol.310 (11), p.2724-2731

2008

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High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Advances in Condensed Matter Physics, 2015-01, Vol.2015, p.1-9

2015

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Perspective and potential of smart optical materials

Smart materials and structures, 2017-09, Vol.26 (9), p.93001

2017

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Defect-engineered Si1−xGex alloy under electron beam irradiation for thermoelectrics

RSC advances, 2012-01, Vol.2 (33), p.12670

2012

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Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering

Journal of crystal growth, 2012-08, Vol.353 (1), p.124-128

2012

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Low temperature ultrahigh vacuum cross-sectional scanning tunneling microscope for luminescence measurements

Review of scientific instruments, 1999-12, Vol.70 (12), p.4595-4599

1999

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Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source

MRS proceedings, 2002, Vol.719

2002

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Defect-engineered Si sub(1-x)Ge sub(x) alloy under electron beam irradiation for thermoelectrics

RSC advances, 2012-11, Vol.2 (33), p.12670-12674

2012

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Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

Advances in Science and Technology, 2013-01, Vol.82, p.38-43

2013

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Crystal Lattice Controlled SiGe Thermoelectric Materials with High Figure of Merit

MRS proceedings, 2011, Vol.1314 (1), Article mrsf10-1314-ll05-17

2011

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MBE growth and processing of III/V-nitride semiconductor thin film structures: Growth of gallium indium arsenic nitride and nano-machining with focused ion beam and electron beam

Park, Yeonjoon

2003

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Diffraction analysis for periodic nano-scale apertures, scatterers and absorbers

Measurement science & technology, 2005-11, Vol.16 (11), p.2208-2212

2005

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AFM study of lattice matched and strained InGaAsN layers on GaAs

Physica. B, Condensed matter, 2001-12, Vol.308, p.98-101

2001

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Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-05, Vol.18 (3), p.1566-1571

2000

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Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl 4 Dopant Source

MRS proceedings, 2002, Vol.719, Article F1.2

2002

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Miniaturization of a Fresnel spectrometer

Journal of optics. A, Pure and applied optics, 2008-09, Vol.10 (9), p.095301-095301 (8)

2008

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AFM study of lattice matched and strained InGaAsN layers on GaAs

Physica. B, Condensed matter, 2001, Vol.308-10, p.98-101

2001

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A Survey on Satellite Communication System Security

Sensors (Basel, Switzerland), 2024-05, Vol.24 (9), p.2897

2024

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Gate-Tunable Electrostatic Friction of Grain Boundary in Chemical-Vapor-Deposited MoS 2

Nano letters, 2023-04, Vol.23 (7), p.3085-3089

2023

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Station: Gesture-Based Authentication for Voice Interfaces

IEEE internet of things journal, 2024-06, Vol.11 (12), p.22668-22683

2024

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Gate-Tunable Electrostatic Friction of Grain Boundary in Chemical-Vapor-Deposited MoS2

Nano letters, 2023-04, Vol.23 (7), p.3085-3089

2023

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Retargeting Human-Object Interaction to Virtual Avatars

IEEE transactions on visualization and computer graphics, 2016-11, Vol.22 (11), p.2405-2412

2016

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Simple and Efficient Enantioselective α‑Deuteration Method of α‑Amino Acids without External Chiral Sources

JACS Au, 2024-06, Vol.4 (6), p.2246-2251

2024

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In-situ hydrogenation of bio-oil/bio-oil phenolic compounds with secondary alcohols over a synthesized mesoporous Ni/CeO2 catalyst

Chemical engineering journal (Lausanne, Switzerland : 1996), 2020-02, Vol.382, p.122912, Article 122912

2020

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Preliminary operational aspects of microwave-powered airship drone

Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Perspective and potential of smart optical materials

Defect-engineered Si1−xGex alloy under electron beam irradiation for thermoelectrics

Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering

Low temperature ultrahigh vacuum cross-sectional scanning tunneling microscope for luminescence measurements

Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source

Defect-engineered Si sub(1-x)Ge sub(x) alloy under electron beam irradiation for thermoelectrics

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

Crystal Lattice Controlled SiGe Thermoelectric Materials with High Figure of Merit

MBE growth and processing of III/V-nitride semiconductor thin film structures: Growth of gallium indium arsenic nitride and nano-machining with focused ion beam and electron beam

Diffraction analysis for periodic nano-scale apertures, scatterers and absorbers

AFM study of lattice matched and strained InGaAsN layers on GaAs

Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth

Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl 4 Dopant Source

Miniaturization of a Fresnel spectrometer

AFM study of lattice matched and strained InGaAsN layers on GaAs

A Survey on Satellite Communication System Security

Gate-Tunable Electrostatic Friction of Grain Boundary in Chemical-Vapor-Deposited MoS 2

Station: Gesture-Based Authentication for Voice Interfaces

Gate-Tunable Electrostatic Friction of Grain Boundary in Chemical-Vapor-Deposited MoS2

Retargeting Human-Object Interaction to Virtual Avatars

Simple and Efficient Enantioselective α‑Deuteration Method of α‑Amino Acids without External Chiral Sources

In-situ hydrogenation of bio-oil/bio-oil phenolic compounds with secondary alcohols over a synthesized mesoporous Ni/CeO2 catalyst

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