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Recovery of indium from In2O3 and liquid crystal display powder via a chloride volatilization process using polyvinyl chloride

Thermochimica acta, 2009-09, Vol.493 (1-2), p.105-108

2009

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Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1041-1046

2016

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IEEE_Xplore

Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory

IEEE electron device letters, 2015-12, Vol.36 (12), p.1318-1320

2015

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IEEE_Xplore

Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3521-3526

2016

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IEEE_Xplore

Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2078-2084

2012

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IEEE_Xplore

Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor

IEEE electron device letters, 2016-11, Vol.37 (11), p.1418-1421

2016

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IEEE_Xplore

Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.67-73

2011

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IEEE_Xplore

3-D Vertical FG nand Flash Memory With a Novel Electrical S/D Technique Using the Extended Sidewall Control Gate

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2966-2973

2011

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IEEE_Xplore

Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T182-T183

2015

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IEEE_Xplore

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3568-3573

2012

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IEEE_Xplore

Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings

IEEE electron device letters, 2010-07, Vol.31 (7), p.635-637

2010

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IEEE_Xplore

Universal surface reaction model of plasma oxide etching

Journal of physics. D, Applied physics, 2020-09, Vol.53 (38), p.385207

2020

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Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04ED12-5

2014

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New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory

IEEE electron device letters, 2012-08, Vol.33 (8), p.1198-1200

2012

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IEEE_Xplore

Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide Spacer

IEEE electron device letters, 2009-02, Vol.30 (2), p.181-184

2009

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IEEE_Xplore

Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.554-560

2005

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IEEE_Xplore

Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Current Applied Physics, 2011, 11(3), , pp.280-285

2011

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Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- \text} Method

IEEE electron device letters, 2015-06, Vol.36 (6), p.561-563

2015

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IEEE_Xplore

Efficient dehalogenation of automobile shredder residue in NaOH/ethylene glycol using a ball mill

Chemosphere (Oxford), 2009, Vol.74 (2), p.287-292

2009

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Removal of hydrogen chloride from gaseous streams using magnesium–aluminum oxide

Chemosphere (Oxford), 2008-10, Vol.73 (5), p.844-847

2008

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Reliability issue of 20 nm MLC NAND Flash

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.3B.2.1-3B.2.4

2013

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IEEE_Xplore

Physical modeling of program and erase speeds of metal-oxide-nitride-oxide-silicon cells with three-dimensional gate-all-around architecture

Japanese Journal of Applied Physics, 2014-01, Vol.53 (1), p.14201-1-014201-4

2014

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Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory

2015 IEEE International Memory Workshop (IMW), 2015, p.1-4

Sung-Kye Park

2015

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IEEE_Xplore

Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1338-1341

2013

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Novel Negative $Vt$ Shift Phenomenon of Program-Inhibit Cell in $\hbox{2}X{-}\hbox{3}X\hbox{-}\hbox{nm}$ Self-Aligned STI nand Flash Memory

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2950-2955

2012

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Recovery of indium from In2O3 and liquid crystal display powder via a chloride volatilization process using polyvinyl chloride

Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation

Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory

Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory

Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor

Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

3-D Vertical FG nand Flash Memory With a Novel Electrical S/D Technique Using the Extended Sidewall Control Gate

Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings

Universal surface reaction model of plasma oxide etching

Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory

Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide Spacer

Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- \text} Method

Efficient dehalogenation of automobile shredder residue in NaOH/ethylene glycol using a ball mill

Removal of hydrogen chloride from gaseous streams using magnesium–aluminum oxide

Reliability issue of 20 nm MLC NAND Flash

Physical modeling of program and erase speeds of metal-oxide-nitride-oxide-silicon cells with three-dimensional gate-all-around architecture

Technology Scaling Challenge and Future Prospects of DRAM and NAND Flash Memory

Methodology for improvement of data retention in floating gate flash memory using leakage current estimation

Novel Negative $Vt$ Shift Phenomenon of Program-Inhibit Cell in $\hbox{2}X{-}\hbox{3}X\hbox{-}\hbox{nm}$ Self-Aligned STI nand Flash Memory

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