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Engineering Quantum Mechanics

1. Aufl., 2011

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Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

Scientific reports, 2016-02, Vol.6 (1), p.20718-20718, Article 20718

2016

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High-efficiency BAlGaN/AlN quantum well structures for optoelectronic applications in ultraviolet spectral region

Optics express, 2015-02, Vol.23 (3), p.3623-3629

Park, Seoung-Hwan

2015

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Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates

Optical and quantum electronics, 2023-05, Vol.55 (5), Article 466

2023

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Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices

IEEE photonics technology letters, 2016-10, Vol.28 (20), p.2153-2155

2016

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IEEE_Xplore

Optical gain characteristics of non-polar Al-rich AlGaN/AlN quantum well structures

Journal of applied physics, 2011-09, Vol.110 (6), p.063105-063105-5

Park, Seoung-Hwan

2011

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Dip-Shaped AlGaN/AlN Light-Emitting Diodes With Delta-Layer Containing Boron

IEEE photonics technology letters, 2017-06, Vol.29 (12), p.1042-1045

2017

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IEEE_Xplore

Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication

Journal of applied physics, 2017-11, Vol.122 (18)

2017

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Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

Optics express, 2014-05, Vol.22 Suppl 3 (S3), p.A857-A866

2014

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Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures

Applied physics letters, 2013-06, Vol.102 (22)

2013

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Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

Scientific reports, 2020-09, Vol.10 (1), p.15371-15371, Article 15371

2020

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Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration

Journal of applied physics, 2014-02, Vol.115 (6)

Park, Seoung-Hwan

2014

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Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Scientific reports, 2019-06, Vol.9 (1), p.8282, Article 8282

2019

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Optical characteristics of type-II ZnTe/ZnSe quantum dots for visible wavelength device applications

Journal of the Korean Physical Society, 2022, 80(6), , pp.463-466

2022

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Effect of Coupled Quantum-Dot Insertion on the Radiative Recombination Probability of Wurtzite InGaN/GaN Quantum Dots

Journal of the Korean Physical Society, 2020, 76(1), , pp.55-58

2020

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High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

Applied physics letters, 2009-01, Vol.94 (4)

2009

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Anisotropic strain effects on light emission characteristics of CdZnO/ZnO quantum well structures

Physics letters. A, 2019-12, Vol.383 (35), p.125995, Article 125995

Park, Seoung-Hwan

2019

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Spontaneous and piezoelectric polarization effects in wurtzite ZnO ∕ MgZnO quantum well lasers

Applied physics letters, 2005-12, Vol.87 (25), p.253509-253509-3

2005

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Quantification of the effects of misfit strain on the energy states of zinc-blende spherical core/shell quantum dots

Journal of the Korean Physical Society, 2021, 79(1), , pp.87-94

2021

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Cd content dependence of in-plane optical polarization in anisotropically strained c-plane CdZnO/ZnO quantum wells

Physica. B, Condensed matter, 2020-11, Vol.596, p.412393, Article 412393

Park, Seoung-Hwan

2020

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Theoretical studies on electronic and optical properties of non-polar wurtzite InGaN/GaN quantum wires

Physica. E, Low-dimensional systems & nanostructures, 2023-06, Vol.150, p.115706, Article 115706

2023

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Characteristics of exciton binding energy in a hybrid InGaN/MgZnO quantum well without internal field

Journal of the Korean Physical Society, 2022, 80(1), , pp.63-67

2022

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Effects of AlGaN delta-layer insertion on light emission characteristics of ultraviolet AlGaN/AlN quantum well structures

Physica Status Solidi. B: Basic Solid State Physics, 2015-08, Vol.252 (8), p.1844-1847

2015

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Optical Gain Characteristics in GaAsPN/GaPN Quantum Well Lasers for Silicon Integration

IEEE journal of selected topics in quantum electronics, 2015-01, Vol.21 (1), p.153-159

2015

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IEEE_Xplore

Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures

Applied physics letters, 2007-01, Vol.90 (1)

2007

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Engineering Quantum Mechanics

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

High-efficiency BAlGaN/AlN quantum well structures for optoelectronic applications in ultraviolet spectral region

Crystal orientation effects on the optical properties of wurtzite GaN/AlN quantum dots on semi-polar substrates

Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices

Optical gain characteristics of non-polar Al-rich AlGaN/AlN quantum well structures

Dip-Shaped AlGaN/AlN Light-Emitting Diodes With Delta-Layer Containing Boron

Intersubband absorption of p-type wurtzite GaN/AlN quantum well for fiber-optics telecommunication

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures

Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Optical characteristics of type-II ZnTe/ZnSe quantum dots for visible wavelength device applications

Effect of Coupled Quantum-Dot Insertion on the Radiative Recombination Probability of Wurtzite InGaN/GaN Quantum Dots

High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

Anisotropic strain effects on light emission characteristics of CdZnO/ZnO quantum well structures

Spontaneous and piezoelectric polarization effects in wurtzite ZnO ∕ MgZnO quantum well lasers

Quantification of the effects of misfit strain on the energy states of zinc-blende spherical core/shell quantum dots

Cd content dependence of in-plane optical polarization in anisotropically strained c-plane CdZnO/ZnO quantum wells

Theoretical studies on electronic and optical properties of non-polar wurtzite InGaN/GaN quantum wires

Characteristics of exciton binding energy in a hybrid InGaN/MgZnO quantum well without internal field

Effects of AlGaN delta-layer insertion on light emission characteristics of ultraviolet AlGaN/AlN quantum well structures

Optical Gain Characteristics in GaAsPN/GaPN Quantum Well Lasers for Silicon Integration

Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures

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