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Asynchronous pulse-modulated plasma effect on the generation of abnormal high-energetic electrons for the suppression of charge-up induced tilting and cell density-dependent etching profile variation

Physics of plasmas, 2023-01, Vol.30 (1)

2023

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Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features

Physics of plasmas, 2022-09, Vol.29 (9)

2022

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Recovery of indium from In2O3 and liquid crystal display powder via a chloride volatilization process using polyvinyl chloride

Thermochimica acta, 2009-09, Vol.493 (1-2), p.105-108

2009

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Influence of Intercell Trapped Charge on Vertical NAND Flash Memory

IEEE electron device letters, 2017-02, Vol.38 (2), p.164-167

2017

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Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1041-1046

2016

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Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory

IEEE electron device letters, 2015-12, Vol.36 (12), p.1318-1320

2015

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Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3521-3526

2016

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Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2078-2084

2012

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Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor

IEEE electron device letters, 2016-11, Vol.37 (11), p.1418-1421

2016

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Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.67-73

2011

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3-D Vertical FG nand Flash Memory With a Novel Electrical S/D Technique Using the Extended Sidewall Control Gate

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2966-2973

2011

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Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T182-T183

2015

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The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3568-3573

2012

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Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings

IEEE electron device letters, 2010-07, Vol.31 (7), p.635-637

2010

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Universal surface reaction model of plasma oxide etching

Journal of physics. D, Applied physics, 2020-09, Vol.53 (38), p.385207

2020

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Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04ED12-5

2014

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New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory

IEEE electron device letters, 2012-08, Vol.33 (8), p.1198-1200

2012

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Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide Spacer

IEEE electron device letters, 2009-02, Vol.30 (2), p.181-184

2009

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Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.554-560

2005

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Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Current Applied Physics, 2011, 11(3), , pp.280-285

2011

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Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- \text} Method

IEEE electron device letters, 2015-06, Vol.36 (6), p.561-563

2015

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Efficient dehalogenation of automobile shredder residue in NaOH/ethylene glycol using a ball mill

Chemosphere (Oxford), 2009, Vol.74 (2), p.287-292

2009

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Removal of hydrogen chloride from gaseous streams using magnesium–aluminum oxide

Chemosphere (Oxford), 2008-10, Vol.73 (5), p.844-847

2008

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Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications

Solid-state electronics, 2014-04, Vol.94, p.51-55

2014

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Reliability issue of 20 nm MLC NAND Flash

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.3B.2.1-3B.2.4

2013

Volltextzugriff (PDF)

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Asynchronous pulse-modulated plasma effect on the generation of abnormal high-energetic electrons for the suppression of charge-up induced tilting and cell density-dependent etching profile variation

Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features

Recovery of indium from In2O3 and liquid crystal display powder via a chloride volatilization process using polyvinyl chloride

Influence of Intercell Trapped Charge on Vertical NAND Flash Memory

Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation

Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory

Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory

Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor

Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

3-D Vertical FG nand Flash Memory With a Novel Electrical S/D Technique Using the Extended Sidewall Control Gate

Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings

Universal surface reaction model of plasma oxide etching

Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory

Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide Spacer

Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- \text} Method

Efficient dehalogenation of automobile shredder residue in NaOH/ethylene glycol using a ball mill

Removal of hydrogen chloride from gaseous streams using magnesium–aluminum oxide

Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications

Reliability issue of 20 nm MLC NAND Flash

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