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Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

Thin solid films, 2013-11, Vol.547, p.106-110

2013

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Effects of low-dose light-emitting-diode therapy in combination with water bath for atopic dermatitis in NC/Nga mice

Photodermatology, photoimmunology & photomedicine, 2016-01, Vol.32 (1), p.34-43

2016

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10-Gb/s Tunable External Cavity Laser Using an Asymmetric Ring Resonator Reflector

IEEE photonics technology letters, 2012-09, Vol.24 (17), p.1481-1483

2012

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Proposal and Analysis of Distributed Reflector‐Laser Diode Integrated with an Electroabsorption Modulator

ETRI Journal, 2013, 35(3), , pp.459-468

2013

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Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG‐Doped Deep Trench of p‐Pillar

ETRI Journal, 2013, 35(4), , pp.632-637

2013

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Effects of a recessed camel-gate head structure on normally-off ALGaN/GaN HEMTs

Journal of the Korean Physical Society, 2013, 62(5), , pp.787-793

2013

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Unipolar resistive switching of solution synthesized ZnO nanorod with self-rectifying and Negative Differential Resistance effects

Materials letters, 2015-03, Vol.142, p.238-241

2015

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Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

Physica. E, Low-dimensional systems & nanostructures, 2015-11, Vol.74, p.241-243

2015

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Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

Journal of photonics for energy, 2015-12, Vol.5 (1), p.53085

2015

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Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate

Solid-state electronics, 2014-05, Vol.95, p.42-45

2014

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Proposal and Analysis of Distributed Reflector-Laser Diode Integrated with an Electroabsorption Modulator

ETRI journal, 2013-05, Vol.35 (3), p.459-468

2013

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High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

IEEE electron device letters, 2005-10, Vol.26 (10), p.707-709

2005

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Effect of Zen Meditation on serum nitric oxide activity and lipid peroxidation

Progress in neuro-psychopharmacology & biological psychiatry, 2005-02, Vol.29 (2), p.327-331

2005

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High-performance V-band monolithic quadruple sub-harmonic mixer with anti-parallel diode pair

Microwave and optical technology letters, 2004-03, Vol.40 (5), p.349-352

2004

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Highly Reflective 1.55 µmIn 1-x-y Ga x Al y As/In 1-z Al z As Quaternary Bragg Mirrors Grown by Metalorganic Chemical Vapor Deposition (MOCVD)

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.L740

1997

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High-Performance Strain-Compensated Multiple Quantum Well Planar Buried Heterostructure Laser Diodes with Low Leakage Current

Japanese Journal of Applied Physics, 1996-03, Vol.35 (3R), p.1751, Article 1751

1996

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Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors

Journal of Electromagnetic Engineering and Science, 2013, Vol.13 (2), p.127-133

2013

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A GaAs power amplifier for 3.3 V CDMA/AMPS dual-mode cellular phones

IEEE transactions on microwave theory and techniques, 1995-12, Vol.43 (12), p.2839-2844

1995

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A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand‐Held Phone

ETRI journal, 1995-01, Vol.16 (4), p.1-11

1995

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Recovery of Dry-Etch Damage in Gallium-Nitride Schottky Barrier Diodes

Journal of the Electrochemical Society, 2001-10, Vol.148 (10), p.G592

2001

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New method to determine intrinsic and extrinsic base-collector capacitances of HBT's using the Miller effect

IEEE electron device letters, 1995-10, Vol.16 (10), p.445-447, Article 445

1995

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Surface condition effects of the inter-metal dielectrics on interconnect aluminum film properties

Thin solid films, 2001-12, Vol.401 (1), p.273-278

2001

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Electrical Characteristics of the 0.1 µm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo- Cyclo -Butene Passivations

Japanese Journal of Applied Physics, 2003-12, Vol.42 (Part 1, No. 12), p.7189-7193

2003

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Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's with wide head T-shaped gate

IEEE electron device letters, 1995-06, Vol.16 (6), p.271-273

1995

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High conversion gain cascode quadruple subharmonic mixer for millimeter-wave applications

Current Applied Physics, 2005, 5(3), , pp.231-236

2005

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Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

Effects of low-dose light-emitting-diode therapy in combination with water bath for atopic dermatitis in NC/Nga mice

10-Gb/s Tunable External Cavity Laser Using an Asymmetric Ring Resonator Reflector

Proposal and Analysis of Distributed Reflector‐Laser Diode Integrated with an Electroabsorption Modulator

Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG‐Doped Deep Trench of p‐Pillar

Effects of a recessed camel-gate head structure on normally-off ALGaN/GaN HEMTs

Unipolar resistive switching of solution synthesized ZnO nanorod with self-rectifying and Negative Differential Resistance effects

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate

Proposal and Analysis of Distributed Reflector-Laser Diode Integrated with an Electroabsorption Modulator

High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

Effect of Zen Meditation on serum nitric oxide activity and lipid peroxidation

High-performance V-band monolithic quadruple sub-harmonic mixer with anti-parallel diode pair

Highly Reflective 1.55 µmIn 1-x-y Ga x Al y As/In 1-z Al z As Quaternary Bragg Mirrors Grown by Metalorganic Chemical Vapor Deposition (MOCVD)

High-Performance Strain-Compensated Multiple Quantum Well Planar Buried Heterostructure Laser Diodes with Low Leakage Current

Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors

A GaAs power amplifier for 3.3 V CDMA/AMPS dual-mode cellular phones

A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand‐Held Phone

Recovery of Dry-Etch Damage in Gallium-Nitride Schottky Barrier Diodes

New method to determine intrinsic and extrinsic base-collector capacitances of HBT's using the Miller effect

Surface condition effects of the inter-metal dielectrics on interconnect aluminum film properties

Electrical Characteristics of the 0.1 µm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo- Cyclo -Butene Passivations

Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's with wide head T-shaped gate

High conversion gain cascode quadruple subharmonic mixer for millimeter-wave applications

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