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Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

Science (American Association for the Advancement of Science), 2001-02, Vol.291 (5505), p.854-856

2001

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EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.269-276

2012

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Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

Journal of applied physics, 2008-11, Vol.104 (9), p.093709-093709-5

2008

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Rapid and Reproducible Fabrication of Carbon Nanotube AFM Probes by Dielectrophoresis

Nano letters, 2005-01, Vol.5 (1), p.11-14

2005

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La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-09, Vol.30 (5)

2012

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Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Microelectronics and reliability, 2011-05, Vol.51 (5), p.879-884

2011

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Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors

Japanese Journal of Applied Physics, 2001-01, Vol.40 (7B), p.L724-L727

2001

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Cobalt valence states and origins of ferromagnetism in Co doped TiO2 rutile thin films

Journal of applied physics, 2004-05, Vol.95 (10), p.5330-5333

2004

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Si nanowire FET and its modeling

Science China. Information sciences, 2011-05, Vol.54 (5), p.1004-1011

2011

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Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal

IEEE electron device letters, 2012-03, Vol.33 (3), p.423-425

2012

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Influence of strained drain on performance of ballistic channel devices

Semiconductor science and technology, 2012-05, Vol.27 (5), p.55001

2012

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Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Microelectronics and reliability, 2010-03, Vol.50 (3), p.332-337

2010

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Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+--i--n+ Diode

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10), p.104301-104301-3

2011

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Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm

Jpn J Appl Phys, 2011-10, Vol.50 (10), p.10PA04-10PA04-4

2011

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Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10), p.10PA05-10PA05-5

2011

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Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n + –i–n + Diode

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10R), p.104301

2011

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Improvement of thermal stability of Ni silicide on N +–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface

Microelectronic engineering, 2008-10, Vol.85 (10), p.2000-2004

2008

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Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CC28-04CC28-5

2013

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Thermal stability of Ni silicide films on heavily doped n + and p + Si substrates

Microelectronic engineering, 2008-07, Vol.85 (7), p.1642-1646

2008

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Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2

Microelectronic engineering, 2008-02, Vol.85 (2), p.315-319

2008

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Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10S), p.10

2011

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Crystal Structures of Pt–Ru Alloy Schottky Contacts on ZnO by Combinatorial Ion Beam Deposition

Japanese Journal of Applied Physics, 2007-05, Vol.46 (5R), p.2907

2007

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Effects of Single-Crystalline GaN Target on GaN Thin Films in Pulsed Laser Deposition Process

Japanese Journal of Applied Physics, 2005-11, Vol.44 (11R), p.7896

2005

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Rapid Synthesis and Scanning Probe Analysis of BaxSr1-xTiO3 Composition Spread Films on a Temperature Gradient Si(100) Substrate

Japanese Journal of Applied Physics, 2002-02, Vol.41 (Part 2, No. 2A), p.L149-L151

2002

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Current conduction and stability of CeO2/La2O3 stacked gate dielectric

Applied physics letters, 2012-12, Vol.101 (23)

2012

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Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide

EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

Rapid and Reproducible Fabrication of Carbon Nanotube AFM Probes by Dielectrophoresis

La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors

Cobalt valence states and origins of ferromagnetism in Co doped TiO2 rutile thin films

Si nanowire FET and its modeling

Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal

Influence of strained drain on performance of ballistic channel devices

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n+--i--n+ Diode

Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm

Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

Effects of Scattering Direction of Hot Electrons in the Drain of Ballistic n + –i–n + Diode

Improvement of thermal stability of Ni silicide on N +–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface

Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability

Thermal stability of Ni silicide films on heavily doped n + and p + Si substrates

Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2

Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

Crystal Structures of Pt–Ru Alloy Schottky Contacts on ZnO by Combinatorial Ion Beam Deposition

Effects of Single-Crystalline GaN Target on GaN Thin Films in Pulsed Laser Deposition Process

Rapid Synthesis and Scanning Probe Analysis of BaxSr1-xTiO3 Composition Spread Films on a Temperature Gradient Si(100) Substrate

Current conduction and stability of CeO2/La2O3 stacked gate dielectric

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