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Paramagnetism on the temperature-magnetization dependences in a superconducting semiconductor solid solution (PbzSn1-z)1-xInxTe

Journal of physics. Conference series, 2020-12, Vol.1697 (1)

2020

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Activation conductivity and superconducting state in solid solutions (PbzSn1-z)0.8In0.2Te

Physica. C, Superconductivity, 2022-06, Vol.597, p.1354067, Article 1354067

2022

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Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields

Journal of magnetism and magnetic materials, 2009-04, Vol.321 (7), p.712-715

2009

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Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1343-1349

2017

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Superconducting properties of (Pb0.05Sn0.95)Te doped with indium under conditions of hydrostatic compression

Semiconductors (Woodbury, N.Y.), 2017-08, Vol.51 (8), p.1017-1020

2017

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Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Journal of physics. Conference series, 2016-11, Vol.769 (1), p.12075

2016

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Superconducting transition in resistivity and magnetization of the solid solution (Pb0.4Sn0.6)0.8In0.2Te

Physica. C, Superconductivity, 2020-12, Vol.579, p.1353755, Article 1353755

2020

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Paramagnetism on the temperature-magnetization dependences in a superconducting semiconductor solid solution (Pb z Sn 1-z ) 1-x In x Te

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12249

2020

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Energy spectrum and quantum magnetotransport in type-II heterojunctions

Fizika tverdogo tela, 2004-11, Vol.46 (11), p.2153-2162

2004

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Corrigendum to ‘Activation conductivity and superconducting state in solid solutions (PbzSn1-z)0.8In0.2Te.’ [Physica C: Superconductivity and its applications 597C (2022) 1354067]

Physica. C, Superconductivity, 2022-07, Vol.598, p.1354079, Article 1354079

2022

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GRAVITY APPLICATION TO ANISOTROPIC SEMICONDUCTOR MATERIALS: FROM HIGH- TO MICROGRAVITY CONDITIONS

Acta astronautica, 2001-01, Vol.48 (2), p.163-168

2001

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Superconducting transition in resistivity and magnetization of the solid solution (Pb0.4Sn0.6)0.8In0.2 Te

Physica. C, Superconductivity, 2020-12, Vol.579, p.1

2020

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Solidification of Anisotropic Semiconductor Tellurium Samples in Microgravity and Their Properties

Acta astronautica, 2001-01, Vol.48 (2), p.87-91

2001

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Hall effect and conductivity in the superconductor-insulator transition region in PbZSn1-ZTe:In

Physics of Semiconductors; Part A, 2007, Vol.893, p.139-140

2007

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Superconductivity and magnetism in In-doped lead-tin tellurides

Journal of alloys and compounds, 1995-03, Vol.219 (1-2), p.313-315

1995

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Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.194-198

2003

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Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

Materials science forum, 2000-01, Vol.329-330, p.297-304

2000

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Comment on "Superconductivity in heavily compensated Mg-doped InN" [ Appl. Phys. Lett. 94 , 142108 ( 2009 ) ]

Applied physics letters, 2009-08, Vol.95 (8), p.086101-086101-2

2009

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Grain Boundary Influence on the Electrical Properties of Tellurium Microstructure Ingots and Nanocluster Crystals

Materials science forum, 2006-01, Vol.508, p.25-30

2006

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Nanostructured I And II Type Superconducting Materials Based On Opal Matrix

Low Temperature Physics: Part A (AIP Conference Proceedings Volume 850), 2006, Vol.850, p.769-770

2006

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Abnormal magnetic-field dependence of Hall coefficient in InN epilayers

Applied physics letters, 2009-07, Vol.95 (1), p.012107-012107-3

2009

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Quantum magnetotransport at a type II broken-gap single heterointerface

Surface science, 2001, Vol.482, p.1083-1089

2001

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Superconducting properties of the SnTe-PbTe system doped with indium

Physica. B, Condensed matter, 1991-02, Vol.169 (1), p.687-688

1991

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Properties of superconducting Bi-Sr-Ca-Cu-O system remelted under higher gravity conditions

Journal of crystal growth, 1992-04, Vol.119 (1), p.122-125, Article 122

1992

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Hysteresis of the Variable Range Hopping Magnetoresistance in the Moderately Compensated p-type Ge

physica status solidi (b), 2000-03, Vol.218 (1), p.165-168

2000

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Paramagnetism on the temperature-magnetization dependences in a superconducting semiconductor solid solution (PbzSn1-z)1-xInxTe

Activation conductivity and superconducting state in solid solutions (PbzSn1-z)0.8In0.2Te

Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields

Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Superconducting properties of (Pb0.05Sn0.95)Te doped with indium under conditions of hydrostatic compression

Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Superconducting transition in resistivity and magnetization of the solid solution (Pb0.4Sn0.6)0.8In0.2Te

Paramagnetism on the temperature-magnetization dependences in a superconducting semiconductor solid solution (Pb z Sn 1-z ) 1-x In x Te

Energy spectrum and quantum magnetotransport in type-II heterojunctions

Corrigendum to ‘Activation conductivity and superconducting state in solid solutions (PbzSn1-z)0.8In0.2Te.’ [Physica C: Superconductivity and its applications 597C (2022) 1354067]

GRAVITY APPLICATION TO ANISOTROPIC SEMICONDUCTOR MATERIALS: FROM HIGH- TO MICROGRAVITY CONDITIONS

Superconducting transition in resistivity and magnetization of the solid solution (Pb0.4Sn0.6)0.8In0.2 Te

Solidification of Anisotropic Semiconductor Tellurium Samples in Microgravity and Their Properties

Hall effect and conductivity in the superconductor-insulator transition region in PbZSn1-ZTe:In

Superconductivity and magnetism in In-doped lead-tin tellurides

Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction

Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

Comment on "Superconductivity in heavily compensated Mg-doped InN" [ Appl. Phys. Lett. 94 , 142108 ( 2009 ) ]

Grain Boundary Influence on the Electrical Properties of Tellurium Microstructure Ingots and Nanocluster Crystals

Nanostructured I And II Type Superconducting Materials Based On Opal Matrix

Abnormal magnetic-field dependence of Hall coefficient in InN epilayers

Quantum magnetotransport at a type II broken-gap single heterointerface

Superconducting properties of the SnTe-PbTe system doped with indium

Properties of superconducting Bi-Sr-Ca-Cu-O system remelted under higher gravity conditions

Hysteresis of the Variable Range Hopping Magnetoresistance in the Moderately Compensated p-type Ge

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