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Raman scattering in alloy semiconductors: Spatial correlation model

Physical review letters, 1984-01, Vol.52 (20), p.1822-1825

1984

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Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

Applied physics letters, 2001-05, Vol.78 (21), p.3166-3168

2001

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New normalization procedure for modulation spectroscopy

Review of scientific instruments, 1987-08, Vol.58 (8), p.1429-1432

1987

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Semiconductor laser damage due to human-body-model electrostatic discharge

Journal of applied physics, 1993-08, Vol.74 (3), p.1510-1520

1993

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The effects of aging on the Bragg section of a DBR laser

IEEE photonics technology letters, 1993-07, Vol.5 (7), p.750-752

1993

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Photoreflectance study of GaAs/AlAs superlattices: fit to electromodulation theory

Applied physics letters, 1986-03, Vol.48 (10), p.653-655

1986

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ZnSe for mirror passivation of high power GaAs based lasers

Electronics letters, 1996, Vol.32 (17), p.1595-1596

1996

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Mirror passivation of InGaAs lasers

Electronics letters, 1997-01, Vol.33 (3), p.213

1997

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Photoreflectance of GaAs/GaAlAs multiple quantum wells: topographical variations in barrier height and well width

Applied physics letters, 1986-05, Vol.48 (19), p.1261-1263

1986

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Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy

Applied physics letters, 1985-01, Vol.46 (2), p.169-171

1985

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Electro-optical effects to externally applied 100 uniaxial stress on InGaAsP 1.3 and 1.5 μm injection lasers

Applied physics letters, 1988-05, Vol.52 (18), p.1461-1463

1988

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Studies of reflection effects on device characteristics and system performances of 1.5- mu m semiconductor DFB lasers

Journal of lightwave technology, 1992-09, Vol.10 (9), p.1267-1271

1992

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Erratum: “Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers” [Appl. Phys. Lett. 78 , 3166 (2001)]

Applied physics letters, 2001-09, Vol.79 (13), p.2115-2115

2001

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Electroreflectance investigation of (Ga1-xAlx)0.47In0.53As lattice matched to InP

Applied physics letters, 1983-07, Vol.43 (1), p.109-111

1983

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A 1.7 Gb/s ASK and a 622 Mb/s incoherent FSK transmission experiment using a 1.55- mu m multiquantum well distributed feedback laser

IEEE photonics technology letters, 1990-12, Vol.2 (12), p.920-922

1990

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Raman Scattering from (110)Hg0.8Cd0.2Te

Solid state communications, 1984-01, Vol.50 (10), p.891-894

1984

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Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system

Physical review. B, Condensed matter, 1988-03, Vol.37 (8), p.4044-4050

1988

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Bonding induced stress in semiconductor laser

Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93), 1993, p.482-484

1993

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Direct measurement of proton straggling in GaAlAs for nuclear profiling

Journal of applied physics, 1984-05, Vol.55 (9), p.3433-3436

1984

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Composition dependence of the spin-orbit splittings in lattice-matched quaternary alloys: generalized Van Vechten-Berolo-Woolley model

Physical review. B, Condensed matter, 1983-01, Vol.28 (6), p.3632-3634

1983

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Studies of reflection effects on device characteristics and system performances of 1.5-mum semiconductor DFB lasers

Journal of lightwave technology, 1992-09, Vol.10 (9), p.1267-1271

1992

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Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system

Solar cells, 1987-06, Vol.21 (1), p.371-377

1987

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Photoreflectance of GaAs doping superlattices

Superlattices and microstructures, 1986, Vol.2 (6), p.513-517

1986

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Raman spectroscopy study of Al0.48In0.52As/InP

Physical review. B, Condensed matter, 1987-11, Vol.36 (14), p.7646-7649

1987

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Weight and Size Reduction by Integrating Avionic Optical Components

2007 IEEE Avionics, Fiber-Optics and Photonics Technology Conference, 2007, p.22-23

2007

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Raman scattering in alloy semiconductors: Spatial correlation model

Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

New normalization procedure for modulation spectroscopy

Semiconductor laser damage due to human-body-model electrostatic discharge

The effects of aging on the Bragg section of a DBR laser

Photoreflectance study of GaAs/AlAs superlattices: fit to electromodulation theory

ZnSe for mirror passivation of high power GaAs based lasers

Mirror passivation of InGaAs lasers

Photoreflectance of GaAs/GaAlAs multiple quantum wells: topographical variations in barrier height and well width

Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy

Electro-optical effects to externally applied 100 uniaxial stress on InGaAsP 1.3 and 1.5 μm injection lasers

Studies of reflection effects on device characteristics and system performances of 1.5- mu m semiconductor DFB lasers

Erratum: “Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers” [Appl. Phys. Lett. 78 , 3166 (2001)]

Electroreflectance investigation of (Ga1-xAlx)0.47In0.53As lattice matched to InP

A 1.7 Gb/s ASK and a 622 Mb/s incoherent FSK transmission experiment using a 1.55- mu m multiquantum well distributed feedback laser

Raman Scattering from (110)Hg0.8Cd0.2Te

Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system

Bonding induced stress in semiconductor laser

Direct measurement of proton straggling in GaAlAs for nuclear profiling

Composition dependence of the spin-orbit splittings in lattice-matched quaternary alloys: generalized Van Vechten-Berolo-Woolley model

Studies of reflection effects on device characteristics and system performances of 1.5-mum semiconductor DFB lasers

Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system

Photoreflectance of GaAs doping superlattices

Raman spectroscopy study of Al0.48In0.52As/InP

Weight and Size Reduction by Integrating Avionic Optical Components

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