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Low Threshold 1550-nm Emitting QD Optically Pumped VCSEL

IEEE photonics technology letters, 2021-01, Vol.33 (2), p.69-72

2021

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CW Operation of a Tunable 1550-nm VCSEL Integrating Liquid-Crystal Microcells

IEEE photonics technology letters, 2020-04, Vol.32 (7), p.391-394

2020

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InAs/InP quantum dot VECSEL emitting at 1.5 μm

Applied physics letters, 2019-10, Vol.115 (17)

2019

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3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

Semiconductor science and technology, 2020-12, Vol.35 (12), p.125029

2020

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High-gain and low-threshold InAs quantum-dot lasers on InP

Applied physics letters, 2005-12, Vol.87 (24), p.243107-243107-3

2005

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Simultaneous two-state lasing in quantum-dot lasers

Applied physics letters, 2003-03, Vol.82 (12), p.1818-1820

2003

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Impact of intraband relaxation on the performance of a quantum-dot laser

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1308-1314

2003

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Tunable semiconductor vertical-cavity surface-emitting laser with an intracavity liquid crystal layer

Applied physics letters, 2011-04, Vol.98 (16)

2011

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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Optics express, 2013-11, Vol.21 (23), p.29000-29005

2013

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Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Applied physics letters, 2001-03, Vol.78 (12), p.1751-1753

2001

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Quantum dot membrane external-cavity surface-emitting laser at 1.5 μm

Applied physics letters, 2021-06, Vol.118 (23)

2021

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Vertical electronic coupling between InAs∕InP quantum-dot layers emitting in the near-infrared range

Applied physics letters, 2005-03, Vol.86 (11)

2005

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Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications

Thin solid films, 2011-07, Vol.519 (18), p.6178-6182

2011

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Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

Physical review. B, Condensed matter and materials physics, 2006-12, Vol.74 (24), Article 245315

2006

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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

Journal of crystal growth, 2003-04, Vol.251 (1), p.230-235

2003

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Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

Applied physics letters, 2007-12, Vol.91 (26)

2007

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Quantitative investigations of optical absorption in InAs∕InP(311)B quantum dots emitting at 1.55μm wavelength

Applied physics letters, 2004-12, Vol.85 (23), p.5685-5687

2004

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Liquid-Crystal Alignment by a Nanoimprinted Grating for Wafer-Scale Fabrication of Tunable Devices

IEEE photonics technology letters, 2018-08, Vol.30 (15), p.1388-1391

2018

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Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection

Semiconductor science and technology, 2005-05, Vol.20 (5), p.459-463

2005

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Si wafer bonded of a-Si∕a-SiNx distributed Bragg reflectors for 1.55-μm-wavelength vertical cavity surface emitting lasers

Journal of applied physics, 2005-08, Vol.98 (4)

2005

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Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

Applied physics letters, 2003-05, Vol.82 (21), p.3632-3634

2003

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Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (12), Article 125323

2004

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Oxide-confined mid-infrared VCSELs

Electronics letters, 2012-12, Vol.48 (25), p.1616-1618

2012

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Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates

Journal of physics. Condensed matter, 2002-12, Vol.14 (47), p.12301-12309

2002

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Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

Physica Status Solidi A (applications and materials science), 2007-06, Vol.204 (6), p.1672-1676

2007

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Low Threshold 1550-nm Emitting QD Optically Pumped VCSEL

CW Operation of a Tunable 1550-nm VCSEL Integrating Liquid-Crystal Microcells

InAs/InP quantum dot VECSEL emitting at 1.5 μm

3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

High-gain and low-threshold InAs quantum-dot lasers on InP

Simultaneous two-state lasing in quantum-dot lasers

Impact of intraband relaxation on the performance of a quantum-dot laser

Tunable semiconductor vertical-cavity surface-emitting laser with an intracavity liquid crystal layer

23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Quantum dot membrane external-cavity surface-emitting laser at 1.5 μm

Vertical electronic coupling between InAs∕InP quantum-dot layers emitting in the near-infrared range

Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

Quantitative investigations of optical absorption in InAs∕InP(311)B quantum dots emitting at 1.55μm wavelength

Liquid-Crystal Alignment by a Nanoimprinted Grating for Wafer-Scale Fabrication of Tunable Devices

Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection

Si wafer bonded of a-Si∕a-SiNx distributed Bragg reflectors for 1.55-μm-wavelength vertical cavity surface emitting lasers

Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects

Oxide-confined mid-infrared VCSELs

Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates

Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

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