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Characterization of surface faceting on (110)GaAs/GaAs grown by molecular beam epitaxy

Journal of crystal growth, 1988-02, Vol.87 (2), p.193-200

1988

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Fabrication of 200-GHz f/sub max/ resonant-tunneling diodes for integration circuit and microwave applications

IEEE electron device letters, 1989-03, Vol.10 (3), p.104-106

1989

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Bending and twisting of an in vivo coronary artery at a bifurcation

Journal of biomechanics, 1992-03, Vol.25 (3), p.287,291-289,295

1992

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A direct algorithm for extracting a transfer function's multiple zeros or poles

Computers & mathematics with applications (1987), 1998-05, Vol.35 (9), p.33-44

1998

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Selective molecular beam epitaxial growth for multifunction microwave monolithic and opto-electronic integrated circuits

Journal of crystal growth, 1995, Vol.150 (1-4), p.1358-1362

1995

Volltextzugriff (PDF)

Selective InAlAs/InGaAs MBE growth for high frequency OEIC applications

Journal of crystal growth, 1993-02, Vol.127 (1), p.892-895

1993

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Factorization of polynomials based on the multiplicities of their roots and applications

Computers & mathematics with applications (1987), 1996, Vol.32 (9), p.29-40

1996

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Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy

Applied physics letters, 1987-08, Vol.51 (9), p.670-672

1987

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Observation of superstructure in high-quality pseudomorphic films of NiAl grown on GaAs

Journal of crystal growth, 1996-11, Vol.169 (2), p.201-208

1996

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Influence of As 4/Ga flux ratio on Be incorporation in heavily doped GaAs grown by molecular beam epitaxy

Journal of crystal growth, 1989, Vol.95 (1), p.301-304

1989

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A large-deformation, finite-element study of chondrodiatasis in the canine distal femoral epiphyseal plate

Journal of biomechanics, 1993, Vol.26 (11), p.1291-1305

1993

Volltextzugriff (PDF)

5-60-GHz high-gain distributed amplifier utilizing InP cascode HEMTs

IEEE journal of solid-state circuits, 1992-10, Vol.27 (10), p.1434-1438

1992

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Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxy

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.1150-1153

1995

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Triple-channel InP-based HEMT with highly nonlinear transconductance for nonlinear circuit applications

Electronics letters, 1993, Vol.29 (23), p.2070-2071

1993

Volltextzugriff (PDF)

Long term stability of MBE process in MMIC production

Journal of crystal growth, 1993-02, Vol.127 (1), p.58-61

1993

Volltextzugriff (PDF)

Two-dimensional device simulation for PHEMT material and process control

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.647-650

1997

Volltextzugriff (PDF)

Growth of GaAS and InAlAs on High Quality, Epitaxial, NiAl Metal Film

MRS proceedings, 1995, Vol.399, Article 537

1995

Volltextzugriff (PDF)

Influence of As4/Ga flux ratio on Be incorporation in heavily doped GaAs grown by molecular beam epitaxy

Journal of crystal growth, 1989-02, Vol.95 (1-4), p.301-304

1989

Volltextzugriff (PDF)

4–40 GHz MMIC distributed active combiner with 3 dB gain

Electronics letters, 1992-04, Vol.28 (8), p.739-741

1992

Volltextzugriff (PDF)

High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz

IEEE transactions on microwave theory and techniques, 1990-12, Vol.38 (12), p.2016-2017

1990

Volltextzugriff (PDF)

Dentin Stresses in Post-reconstructed Teeth with Diminishing Bone Support

Journal of dental research, 1983-09, Vol.62 (9), p.1002-1008

1983

Volltextzugriff (PDF)

Effect of apical root resorption on periodontal support

The Journal of prosthetic dentistry, 1986-09, Vol.56 (3), p.317-319

1986

Volltextzugriff (PDF)

94 GHz InP MMIC five-section distributed amplifier

Electronics letters, 1990, Vol.26 (2), p.91-92

1990

Volltextzugriff (PDF)

Dry etching process in InP Gunn device technology utilizing inductively coupled plasma (ICP) system

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.187-190

1998

Volltextzugriff (PDF)

Root stresses with tapered-end post design in periodontally compromised teeth

The Journal of prosthetic dentistry, 1987-03, Vol.57 (3), p.281-286

1987

Volltextzugriff (PDF)

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Characterization of surface faceting on (110)GaAs/GaAs grown by molecular beam epitaxy

Fabrication of 200-GHz f/sub max/ resonant-tunneling diodes for integration circuit and microwave applications

Bending and twisting of an in vivo coronary artery at a bifurcation

A direct algorithm for extracting a transfer function's multiple zeros or poles

Selective molecular beam epitaxial growth for multifunction microwave monolithic and opto-electronic integrated circuits

Selective InAlAs/InGaAs MBE growth for high frequency OEIC applications

Factorization of polynomials based on the multiplicities of their roots and applications

Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy

Observation of superstructure in high-quality pseudomorphic films of NiAl grown on GaAs

Influence of As 4/Ga flux ratio on Be incorporation in heavily doped GaAs grown by molecular beam epitaxy

A large-deformation, finite-element study of chondrodiatasis in the canine distal femoral epiphyseal plate

5-60-GHz high-gain distributed amplifier utilizing InP cascode HEMTs

Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxy

Triple-channel InP-based HEMT with highly nonlinear transconductance for nonlinear circuit applications

Long term stability of MBE process in MMIC production

Two-dimensional device simulation for PHEMT material and process control

Growth of GaAS and InAlAs on High Quality, Epitaxial, NiAl Metal Film

Influence of As4/Ga flux ratio on Be incorporation in heavily doped GaAs grown by molecular beam epitaxy

4–40 GHz MMIC distributed active combiner with 3 dB gain

High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz

Dentin Stresses in Post-reconstructed Teeth with Diminishing Bone Support

Effect of apical root resorption on periodontal support

94 GHz InP MMIC five-section distributed amplifier

Dry etching process in InP Gunn device technology utilizing inductively coupled plasma (ICP) system

Root stresses with tapered-end post design in periodontally compromised teeth

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