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Resistive switching behavior of SiOx layers with Si nanoparticles

Journal of physics. Conference series, 2017, Vol.794 (1)

2017

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Effect of hydrogen on hardness of amorphous silicon

Applied physics. A, Materials science & processing, 2011-01, Vol.102 (1), p.131-135

2011

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Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-09, Vol.268 (17), p.2660-2665

2010

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Infrared absorption strengths of ion-implanted hydrogenated amorphous silicon

Thin solid films, 2008-03, Vol.516 (10), p.3383-3386

2008

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Nanoindentation of hydrogenated amorphous silicon

Philosophical magazine (Abingdon, England), 2010-10, Vol.90 (30), p.4027-4039

2010

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Nanoindentation-induced pile-up in hydrogenated amorphous silicon

Journal of physics. Conference series, 2010-11, Vol.253 (1), p.012054

2010

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Hydrogen as origin of compressive intrinsic stress in hydrogenated amorphous silicon: The contribution of clustered forms

Applied physics letters, 2005-07, Vol.87 (2), p.023104-023104-3

2005

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Hydrogen bonding and structural order in hydrogenated amorphous silicon prepared with hydrogen-diluted silane

Journal of physics. D, Applied physics, 2004-01, Vol.37 (2), p.249-254

2004

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Ion-beam induced hydrogen redistribution in a-Si:H-based triple layer structures

Journal of physics. Conference series, 2010-11, Vol.253 (1), p.012055

2010

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Ion beam-induced hydrogen migration in a SiO2/a-Si:H/SiO2 layer stack

Semiconductor science and technology, 2009-03, Vol.24 (3), p.035012-035012 (5)

2009

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Effect of film thickness on hydrogenated amorphous silicon grown with hydrogen diluted silane

Applied physics letters, 2002-04, Vol.80 (14), p.2463-2465

2002

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Depth distributions of hydrogen and intrinsic stress in a-Si:H films prepared from hydrogen-diluted silane

Journal of applied physics, 2001-09, Vol.90 (6), p.3065-3068

2001

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Hydrogen solubility limit in hydrogenated amorphous silicon

Semiconductor science and technology, 2004-12, Vol.19 (12), p.1422-1425

2004

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18MeV electron irradiation-induced metastability in hydrogenated amorphous silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-10, Vol.239 (4), p.370-374

2005

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The effect of structural disorder on mechanical stress in a-Si:H films

Journal of physics. D, Applied physics, 2001-09, Vol.34 (17), p.2589-2592

2001

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Mechanical stress in thin a-Si:H films

Semiconductor science and technology, 2000-10, Vol.15 (10), p.971-974

2000

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Resistive switching behavior of SiO x layers with Si nanoparticles

Journal of physics. Conference series, 2017-01, Vol.794, p.12018

2017

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Concentration profiles of ion exchanged optical waveguides in glass: analysed in hollow cathode plasma

Surface & coatings technology, 2003-03, Vol.166 (2), p.201-205

2003

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Raman study of ion-implanted hydrogenated amorphous silicon

Journal of materials science. Materials in electronics, 2003-10, Vol.14 (10-12), p.753-754

2003

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Elastic recoil detection analysis of ion-exchanged soda-lime glass substrates for a-Si:H devices

Vacuum, 2002-12, Vol.69 (1), p.289-293

2002

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Determination of refractive index profiles of gradient optical waveguides by ellipsometry

Optics communications, 1998-05, Vol.150 (1), p.121-125

1998

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Effect of film thickness on hydrogen content in a-Si: H

Journal of materials science. Materials in electronics, 2003-10, Vol.14 (10-12), p.751-752

2003

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Changes in electrical conductance of hydrogenated amorphous silicon deposited on optical waveguides in glass

Applied physics letters, 1997-07, Vol.71 (4), p.431-433

1997

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Electron irradiation of a-Si:H films prepared from hydrogen-diluted silane

Vacuum, 2002-12, Vol.69 (1), p.79-82

2002

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Effect of ion implantation on the structural properties of a-Si:H films

Vacuum, 2002-12, Vol.69 (1), p.83-86

2002

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Resistive switching behavior of SiOx layers with Si nanoparticles

Effect of hydrogen on hardness of amorphous silicon

Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon

Infrared absorption strengths of ion-implanted hydrogenated amorphous silicon

Nanoindentation of hydrogenated amorphous silicon

Nanoindentation-induced pile-up in hydrogenated amorphous silicon

Hydrogen as origin of compressive intrinsic stress in hydrogenated amorphous silicon: The contribution of clustered forms

Hydrogen bonding and structural order in hydrogenated amorphous silicon prepared with hydrogen-diluted silane

Ion-beam induced hydrogen redistribution in a-Si:H-based triple layer structures

Ion beam-induced hydrogen migration in a SiO2/a-Si:H/SiO2 layer stack

Effect of film thickness on hydrogenated amorphous silicon grown with hydrogen diluted silane

Depth distributions of hydrogen and intrinsic stress in a-Si:H films prepared from hydrogen-diluted silane

Hydrogen solubility limit in hydrogenated amorphous silicon

18MeV electron irradiation-induced metastability in hydrogenated amorphous silicon

The effect of structural disorder on mechanical stress in a-Si:H films

Mechanical stress in thin a-Si:H films

Resistive switching behavior of SiO x layers with Si nanoparticles

Concentration profiles of ion exchanged optical waveguides in glass: analysed in hollow cathode plasma

Raman study of ion-implanted hydrogenated amorphous silicon

Elastic recoil detection analysis of ion-exchanged soda-lime glass substrates for a-Si:H devices

Determination of refractive index profiles of gradient optical waveguides by ellipsometry

Effect of film thickness on hydrogen content in a-Si: H

Changes in electrical conductance of hydrogenated amorphous silicon deposited on optical waveguides in glass

Electron irradiation of a-Si:H films prepared from hydrogen-diluted silane

Effect of ion implantation on the structural properties of a-Si:H films

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