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ON OPTIMIZATION OF MANUFACTURING OF PRODUCT TO OBTAIN MAXIMAL VALUE OF PROFIT TAKING INTO ACCOUNT CHANGING OF PRICES

Global economy journal, 2021-12, Vol.21 (4)

PANKRATOV, E. L.

2021

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PROGNOSIS OF REPLACEMENT OF LINE OF OLD INNOVATIVE PRODUCTS BY LINE OF NEW INNOVATIVE PRODUCTS

Global economy journal, 2019-12, Vol.19 (4)

PANKRATOV, E. L.

2019

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MODEL FOR PROGNOSIS OF ECONOMIC GROWTH: ACCOUNTING OF INFLUENCE OF THE ENVIRONMENT

Global economy journal, 2019-03, Vol.19 (1)

PANKRATOV, E. L.

2019

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On Analysis of the Competitiveness of Industrial Enterprises

Journal of the knowledge economy, 2022-06, Vol.13 (2), p.805-812

2022

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An approach to model manufacturing of an enhanced swing differential Colpitts oscillator based on heterostructures to increase density of their elements with account mismatch-induced stress: on optimization of annealing

International journal of advanced manufacturing technology, 2021, Vol.112 (3-4), p.949-967

Pankratov, E. L.

2021

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On estimation of maximal value of full diffusion time of infused and implanted dopants

International journal of mathematics for industry (Online), 2024-07

Pankratov, E. L.

2024

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On influence of self-heating of a p–n-heterojunction on its properties

International journal of mathematics for industry (Online), 2023-12, Vol.15 (1)

Pankratov, E. L.

2023

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Influence of the spatial, temporal, and concentrational dependence of the diffusion coefficient on dopant dynamics : Optimization of annealing time

Physical review. B, Condensed matter and materials physics, 2005-08, Vol.72 (7), p.075201.1-075201.8, Article 075201

PANKRATOV, E. L

2005

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Influence of ion doping temperature on the distribution of dopant

Radiation effects and defects in solids, 2020-11, Vol.175 (11-12), p.1052-1070

Pankratov, E. L.

2020

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About changing of temperature of gases and liquids in a pipeline by using cooling and/or heating of local sections

Afrika mathematica, 2021-11, Vol.32 (7-8), p.1519-1529

Pankratov, E. L.

2021

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Variation of concentration of charge carriers in a diffusion-junction rectifier under the influence of radiation processing of materials

Radiation effects and defects in solids, 2019-10, Vol.174 (9-10), p.844-858

Pankratov, E. L.

2019

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Convective diffusion from a gas phase to a rotating disk

Journal of applied mechanics and technical physics, 2016-07, Vol.57 (4), p.637-645

2016

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Redistribution of infused and implanted dopants in a multilayer structure during annealing of dopant and radiation defects for the production of a system of p–n junctions

Semiconductor science and technology, 2008-09, Vol.23 (9), p.095005

Pankratov, E L

2008

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Redistribution of dopant during microwave annealing of a multilayer structure for production p−n junction

Journal of applied physics, 2008-03, Vol.103 (6)

Pankratov, E. L.

2008

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Decreasing dimensions of planar field-effect transistors by using native inhomogeneity of heterostructure

Applied nanoscience, 2014, Vol.4 (1), p.77-84

Pankratov, E. L.

2014

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Using serial radiation processing and microwave annealing decreases depth of p–n junction in a semiconductor heterostructure

Applied nanoscience, 2013-08, Vol.3 (4), p.281-290

Pankratov, E. L.

2013

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Dynamics of δ-dopant redistribution during heterostructure growth

The European physical journal. B, Condensed matter physics, 2007-06, Vol.57 (3), p.251-256

Pankratov, E. L.

2007

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Optimization of annealing of dopant to increase sharpness of p–n junctions in a heterostructure with drain of dopant

Applied nanoscience, 2014-06, Vol.4 (5), p.537-541

2014

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Modification of materials to decrease of quantity of radiation defects in an implanted-heterojunction rectifier

Applied nanoscience, 2013-08, Vol.3 (4), p.303-320

2013

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On Control of Growth of Plants by Changing of Light

BioNanoScience, 2024-04

Pankratov, E. L.

2024

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Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

Journal of physics. D, Applied physics, 2009-04, Vol.42 (7), p.079802-79802

Pankratov, E L

2009

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Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

Journal of physics. D, Applied physics, 2008-06, Vol.41 (11), p.115105-115105 (6)

Pankratov, E L

2008

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On organization of drainage of radiation defects from working area of an integrated circuit

ISSS journal of micro and smart systems, 2024-06, Vol.13 (1), p.1-17

Pankratov, E. L.

2024

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A model of redistribution of dopant in a multilayer structure with changing overgrowth regime

International journal of mathematics for industry (Online), 2024-03

Pankratov, E. L.

2024

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On estimation of growth velocity of films during magnetron sputtering

ISSS journal of micro and smart systems, 2023-11, Vol.12 (2), p.133-138

Pankratov, E. L.

2023

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ON OPTIMIZATION OF MANUFACTURING OF PRODUCT TO OBTAIN MAXIMAL VALUE OF PROFIT TAKING INTO ACCOUNT CHANGING OF PRICES

PROGNOSIS OF REPLACEMENT OF LINE OF OLD INNOVATIVE PRODUCTS BY LINE OF NEW INNOVATIVE PRODUCTS

MODEL FOR PROGNOSIS OF ECONOMIC GROWTH: ACCOUNTING OF INFLUENCE OF THE ENVIRONMENT

On Analysis of the Competitiveness of Industrial Enterprises

An approach to model manufacturing of an enhanced swing differential Colpitts oscillator based on heterostructures to increase density of their elements with account mismatch-induced stress: on optimization of annealing

On estimation of maximal value of full diffusion time of infused and implanted dopants

On influence of self-heating of a p–n-heterojunction on its properties

Influence of the spatial, temporal, and concentrational dependence of the diffusion coefficient on dopant dynamics : Optimization of annealing time

Influence of ion doping temperature on the distribution of dopant

About changing of temperature of gases and liquids in a pipeline by using cooling and/or heating of local sections

Variation of concentration of charge carriers in a diffusion-junction rectifier under the influence of radiation processing of materials

Convective diffusion from a gas phase to a rotating disk

Redistribution of infused and implanted dopants in a multilayer structure during annealing of dopant and radiation defects for the production of a system of p–n junctions

Redistribution of dopant during microwave annealing of a multilayer structure for production p−n junction

Decreasing dimensions of planar field-effect transistors by using native inhomogeneity of heterostructure

Using serial radiation processing and microwave annealing decreases depth of p–n junction in a semiconductor heterostructure

Dynamics of δ-dopant redistribution during heterostructure growth

Optimization of annealing of dopant to increase sharpness of p–n junctions in a heterostructure with drain of dopant

Modification of materials to decrease of quantity of radiation defects in an implanted-heterojunction rectifier

On Control of Growth of Plants by Changing of Light

Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

On organization of drainage of radiation defects from working area of an integrated circuit

A model of redistribution of dopant in a multilayer structure with changing overgrowth regime

On estimation of growth velocity of films during magnetron sputtering

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