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InGaAs/InP composite collector heterostructure bipolar transistors

Electronics letters, 1992, Vol.28 (7), p.607-609

1992

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Impact of Major Changes To The Brazilian Health Care System Utilizing The Heat Maps Project

Value in health, 2015-11, Vol.18 (7), p.A808-A808

2015

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Cost and effectiveness of venlafaxine extended-release and selective serotonin reuptake inhibitors in the acute phase of outpatient treatment for major depressive disorder

Journal of clinical psychopharmacology, 2004-10, Vol.24 (5), p.497-506

2004

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Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes

Applied physics letters, 1987-02, Vol.50 (7), p.413-415

1987

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Kinetic surface roughening in molecular beam epitaxy of InP

Physical review letters, 1993-06, Vol.70 (26), p.4106-4109

1993

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Workplace productivity, employment issues, and resource utilization in patients with bipolar I disorder

Journal of medical economics, 2010-03, Vol.13 (1), p.23-32

2010

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InGaAS/InP long wavelength quantum well infrared photodetectors

Applied physics letters, 1991-05, Vol.58 (18), p.2024-2026

1991

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Exploratory analysis of psychiatric-related utilization and costs associated with paliperidone ER compared with other oral atypical antipsychotics using pharmacy claims from an administrative database

Journal of medical economics, 2010-12, Vol.13 (4), p.610-617

2010

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Lattice-matched InGaAsP/InP long-wavelength quantum well infrared photodetectors

Applied physics letters, 1992-02, Vol.60 (5), p.636-638

1992

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Subpicosecond InP/InGaAs heterostructure bipolar transistors

IEEE electron device letters, 1989-06, Vol.10 (6), p.267-269

1989

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Health Care Utilization and Costs among Medicaid-enrolled Patients with Schizophrenia Experiencing Multiple Psychiatric Relapses

Health outcomes research in medicine, 2012-11, Vol.3 (4), p.e183-e194

2012

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Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

Applied physics letters, 1988-09, Vol.53 (11), p.995-997

1988

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InGaAs/InP hole intersubband normal incidence quantum well infrared photodetector

Journal of applied physics, 1992-03, Vol.71 (5), p.2458-2460

1992

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Implant-induced high-resistivity regions in InP and InGaAs

Journal of applied physics, 1989-07, Vol.66 (2), p.656-662

1989

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Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors

Applied physics letters, 1992-07, Vol.61 (1), p.70-72

1992

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Critical layer thickness in strained Ga1-xInxAs/InP quantum wells

Applied physics letters, 1989-10, Vol.55 (16), p.1668-1670

1989

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Reflection noise in index-guided InGaAsP lasers

IEEE journal of quantum electronics, 1986-02, Vol.22 (2), p.286-293

1986

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High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy

Journal of applied physics, 1987-08, Vol.62 (4), p.1278-1283

1987

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Admittance spectroscopy measurement of band offsets in strained layers of InxGa1-xAs grown on InP

Applied physics letters, 1989-02, Vol.54 (8), p.739-741

1989

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Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

Applied physics letters, 1987-04, Vol.50 (15), p.956-958

1987

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Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces

Applied physics letters, 1987-05, Vol.50 (20), p.1441-1443

1987

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Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors

Applied physics letters, 1991-12, Vol.59 (26), p.3431-3433

1991

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Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

Applied physics letters, 1986-07, Vol.49 (3), p.164-166

1986

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Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

Applied physics letters, 1987-03, Vol.50 (12), p.736-738

1987

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Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistors

Journal of crystal growth, 1987-02, Vol.81 (1), p.249-260

Panish, M.B.

1987

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InGaAs/InP composite collector heterostructure bipolar transistors

Impact of Major Changes To The Brazilian Health Care System Utilizing The Heat Maps Project

Cost and effectiveness of venlafaxine extended-release and selective serotonin reuptake inhibitors in the acute phase of outpatient treatment for major depressive disorder

Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes

Kinetic surface roughening in molecular beam epitaxy of InP

Workplace productivity, employment issues, and resource utilization in patients with bipolar I disorder

InGaAS/InP long wavelength quantum well infrared photodetectors

Exploratory analysis of psychiatric-related utilization and costs associated with paliperidone ER compared with other oral atypical antipsychotics using pharmacy claims from an administrative database

Lattice-matched InGaAsP/InP long-wavelength quantum well infrared photodetectors

Subpicosecond InP/InGaAs heterostructure bipolar transistors

Health Care Utilization and Costs among Medicaid-enrolled Patients with Schizophrenia Experiencing Multiple Psychiatric Relapses

Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

InGaAs/InP hole intersubband normal incidence quantum well infrared photodetector

Implant-induced high-resistivity regions in InP and InGaAs

Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors

Critical layer thickness in strained Ga1-xInxAs/InP quantum wells

Reflection noise in index-guided InGaAsP lasers

High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy

Admittance spectroscopy measurement of band offsets in strained layers of InxGa1-xAs grown on InP

Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces

Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors

Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistors

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