UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 36

Sortiert nach

Size and nitrogen inhomogeneity in detonation and laser synthesized primary nanodiamond particles revealed via salt-assisted deaggregation

Carbon (New York), 2021-01, Vol.171, p.230-239

2021

Link zum Volltext

Verfügbarkeit prüfen

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Journal of crystal growth, 2017-04, Vol.464, p.59-63

2017

Link zum Volltext

Verfügbarkeit prüfen

Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

Journal of crystal growth, 2015-03, Vol.414, p.156-160

2015

Link zum Volltext

Verfügbarkeit prüfen

Vapor Pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum

Journal of chemical and engineering data, 2014-12, Vol.59 (12), p.4179-4183

2014

Link zum Volltext

Verfügbarkeit prüfen

Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony

Fluid phase equilibria, 2013-12, Vol.360, p.106-110

2013

Link zum Volltext

Verfügbarkeit prüfen

Epitaxial growth on porous GaAs substrates

Comptes rendus. Chimie, 2013-01, Vol.16 (1), p.59-64

2013

Link zum Volltext

Verfügbarkeit prüfen

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds

ACS applied materials & interfaces, 2017-11, Vol.9 (44), p.38842-38853

2017

Link zum Volltext

Verfügbarkeit prüfen

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V‑Pit Formation on the AlGaN/GaN Interface

ACS applied materials & interfaces, 2023-04, Vol.15 (15), p.19646-19652

2023

Link zum Volltext

Verfügbarkeit prüfen

Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

Physics procedia, 2010-01, Vol.3 (2), p.1189-1193

2010

Link zum Volltext

Verfügbarkeit prüfen

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers

Materials, 2022-10, Vol.15 (19), p.6916

2022

Link zum Volltext

Verfügbarkeit prüfen

Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

Journal of crystal growth, 2021-07, Vol.565, p.126151, Article 126151

2021

Link zum Volltext

Verfügbarkeit prüfen

Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

Journal of crystal growth, 2019-02, Vol.507, p.246-250

2019

Link zum Volltext

Verfügbarkeit prüfen

GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Journal of crystal growth, 2017-04, Vol.464, p.64-68

2017

Link zum Volltext

Verfügbarkeit prüfen

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

CrystEngComm, 2019, Vol.21 (2), p.356-362

2019

Link zum Volltext

Verfügbarkeit prüfen

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Applied surface science, 2014-05, Vol.301, p.173-177

2014

Link zum Volltext

Verfügbarkeit prüfen

Vapor Pressure of Selected Organic Iodides

Journal of chemical and engineering data, 2010-11, Vol.55 (11), p.4780-4784

2010

Link zum Volltext

Verfügbarkeit prüfen

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

Link zum Volltext

Verfügbarkeit prüfen

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 mu m

Journal of crystal growth, 2015-03, Vol.414, p.167-171

2015

Link zum Volltext

Verfügbarkeit prüfen

Absolute energy levels in nanodiamonds of different origins and surface chemistries

Nanoscale advances, 2023-08, Vol.5 (17), p.442-4414

2023

Link zum Volltext

Verfügbarkeit prüfen

Optical characterization of MOVPE grown δ-InAs layers in GaAs

Physica status solidi. C, 2005-01, Vol.2 (4), p.1319-1324

2005

Link zum Volltext

Verfügbarkeit prüfen

Vapor Pressure of Tetrakis(dimethylamino)germanium

Journal of chemical and engineering data, 2010-09, Vol.55 (9), p.4095-4097

2010

Link zum Volltext

Verfügbarkeit prüfen

Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures

Journal of crystal growth, 2008-04, Vol.310 (7-9), p.2229-2233

2008

Link zum Volltext

Verfügbarkeit prüfen

Vapour pressure and heat capacities of metal organic precursors, Y(thd) 3 and Zr(thd) 4

Journal of crystal growth, 2004-03, Vol.264 (1), p.192-200

2004

Link zum Volltext

Verfügbarkeit prüfen

Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

Journal of crystal growth, 2023-03, Vol.605, p.127061, Article 127061

2023

Link zum Volltext

Verfügbarkeit prüfen

Epitaxial growth on porous GaAs substrates: Electrochemistry and naotechnologies: The new challenges

Comptes rendus. Chimie, 2013, Vol.16 (1), p.59-64

2013

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 36

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(34)
Mit Volltextzugriff
(36)

Publikationsform

Artikel
(36)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(27)
Physical Sciences
(24)
Technology
(22)
Materials Science
(16)
Physics
(16)
Materials Science, Multidisciplinary
(14)
Chemistry
(12)
Physics, Applied
(11)
Crystallography
(8)
Engineering
(8)
Chemistry, Multidisciplinary
(7)
Exact Sciences And Technology
(7)
Engineering, Chemical
(5)
Photoluminescence
(5)
Physics, Condensed Matter
(5)
Quantum Dots
(5)
Thermodynamics
(5)
A3. Movpe
(4)
Chemistry, Physical
(4)
Gallium Arsenide
(4)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

3 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Size and nitrogen inhomogeneity in detonation and laser synthesized primary nanodiamond particles revealed via salt-assisted deaggregation

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

Vapor Pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum

Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony

Epitaxial growth on porous GaAs substrates

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V‑Pit Formation on the AlGaN/GaN Interface

Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers

Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Vapor Pressure of Selected Organic Iodides

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 mu m

Absolute energy levels in nanodiamonds of different origins and surface chemistries

Optical characterization of MOVPE grown δ-InAs layers in GaAs

Vapor Pressure of Tetrakis(dimethylamino)germanium

Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures

Vapour pressure and heat capacities of metal organic precursors, Y(thd) 3 and Zr(thd) 4

Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

Epitaxial growth on porous GaAs substrates: Electrochemistry and naotechnologies: The new challenges

Suchergebnisse filtern