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Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures

Journal of crystal growth, 2017-04, Vol.464, p.221-225

2017

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Impact of Ge doping on MOVPE grown InGaN layers

Journal of crystal growth, 2023-02, Vol.604, p.127043, Article 127043

2023

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Improvement of luminescence properties of n-GaN using TEGa precursor

Journal of crystal growth, 2020-02, Vol.531, p.125383, Article 125383

2020

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Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

Journal of luminescence, 2021-08, Vol.236, p.118127, Article 118127

2021

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Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Journal of physics. D, Applied physics, 2013-03, Vol.46 (9), p.095103-1-6

2013

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Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

Journal of crystal growth, 2019-01, Vol.506, p.8-13

2019

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A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Journal of crystal growth, 2020-04, Vol.536, p.125579, Article 125579

2020

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On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure

Journal of applied physics, 2017-06, Vol.121 (21)

2017

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Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

Journal of crystal growth, 2019-02, Vol.507, p.310-315

2019

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Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

Journal of applied physics, 2013-11, Vol.114 (17)

2013

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Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

Physica. B, Condensed matter, 2016-01, Vol.480, p.14-22

2016

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InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Journal of crystal growth, 2017-04, Vol.464, p.206-210

2017

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Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1343-1349

2017

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Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Journal of crystal growth, 2013-05, Vol.370, p.303-306

2013

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Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

Thin solid films, 2013-09, Vol.543, p.83-87

2013

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Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

Journal of crystal growth, 2014-06, Vol.396, p.54-60

2014

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Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Surface science, 2010-02, Vol.604 (3), p.318-321

2010

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Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Physica. E, Low-dimensional systems & nanostructures, 2013-02, Vol.48, p.61-65

2013

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Applied surface science, 2014-07, Vol.306, p.89-93

2014

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InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Journal of crystal growth, 2010-04, Vol.312 (8), p.1383-1387

2010

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Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 μm Bands

Journal of nanoscience and nanotechnology, 2011-08, Vol.11 (8), p.6804-6809

2011

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Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Journal of physics. Conference series, 2016-11, Vol.769 (1), p.12075

2016

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Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

Journal of crystal growth, 2011-01, Vol.315 (1), p.110-113

2011

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Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs

International journal of nanotechnology., 2012, Vol.9 (8-9), p.732

2012

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Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures

Impact of Ge doping on MOVPE grown InGaN layers

Improvement of luminescence properties of n-GaN using TEGa precursor

Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure

Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 μm Bands

Microwave radiation absorption by 2D-electrons in the type II composite InAs GaSb AlSb quantum wells in a magnetic field

Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs

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