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A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

Advanced functional materials, 2020-05, Vol.30 (18), p.n/a

2020

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Interface Defect Hydrogen Depassivation and Capacitance–Voltage Hysteresis of Al2O3/InGaAs Gate Stacks

ACS applied materials & interfaces, 2017-03, Vol.9 (8), p.7819-7825

2017

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Dielectric breakdown mechanisms in gate oxides

Journal of applied physics, 2005-12, Vol.98 (12), p.121301-121301-36

2005

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Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

IEEE access, 2020, Vol.8, p.202174-202193

2020

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Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

Applied physics express, 2021-12, Vol.14 (12), p.121001

2021

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Mesoporous metal-oxide-semiconductor capacitors detect intra-porous fluid changes

Colloids and surfaces. A, Physicochemical and engineering aspects, 2017-07, Vol.524, p.66-70

2017

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Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-Faults

Electronics (Basel), 2021-10, Vol.10 (19), p.2427

2021

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Hf-based high-k dielectrics for p-Ge MOS gate stacks

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-05, Vol.32 (3)

2014

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Analytic circuit model for thermal drying behavior of electronic inks

Frontiers in electronics (Online), 2023-01, Vol.3

2023

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On the Thermal Models for Resistive Random Access Memory Circuit Simulation

Nanomaterials (Basel, Switzerland), 2021-05, Vol.11 (5), p.1261

2021

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SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

Frontiers in physics, 2021-09, Vol.9

2021

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Physical mechanism of progressive breakdown in gate oxides

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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Heavy-ion micro-beam use for transient fault injection in VLSI circuits

2014 IEEE 41st International Conference on Plasma Sciences (ICOPS) held with 2014 IEEE International Conference on High-Power Particle Beams (BEAMS), 2014, p.1-1

2014

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High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Advanced functional materials, 2024-04, Vol.34 (15), p.n/a

2024

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Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition

Journal of low power electronics and applications, 2021-03, Vol.11 (1), p.9

2021

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Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces

Journal of applied physics, 2020-07, Vol.128 (4)

2020

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Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

Nanoscale, 2023-02, Vol.15 (5), p.2171-218

2023

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Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018-11, Vol.36 (6)

2018

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Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

ACS applied materials & interfaces, 2017-11, Vol.9 (45), p.39758-39770

2017

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Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Microelectronics and reliability, 2016-01, Vol.56, p.22-28

2016

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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3349-3355

2019

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Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

Advanced electronic materials, 2022-08, Vol.8 (8), p.n/a

2022

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150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

Advanced electronic materials, 2020-12, Vol.6 (12), p.n/a

2020

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Piecewise-linear Modelling of CMOS Gates Propagation Delay as a Function of PVT Variations and Aging

2021 Argentine Conference on Electronics (CAE), 2021, p.25-31

2021

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A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics

Interface Defect Hydrogen Depassivation and Capacitance–Voltage Hysteresis of Al2O3/InGaAs Gate Stacks

Dielectric breakdown mechanisms in gate oxides

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects

Mesoporous metal-oxide-semiconductor capacitors detect intra-porous fluid changes

Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-Faults

Hf-based high-k dielectrics for p-Ge MOS gate stacks

Analytic circuit model for thermal drying behavior of electronic inks

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

Standards for the Characterization of Endurance in Resistive Switching Devices

SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

Physical mechanism of progressive breakdown in gate oxides

Heavy-ion micro-beam use for transient fault injection in VLSI circuits

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition

Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces

Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

Piecewise-linear Modelling of CMOS Gates Propagation Delay as a Function of PVT Variations and Aging

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