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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions

IEEE journal of emerging and selected topics in power electronics, 2017-03, Vol.5 (1), p.469-489

2017

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Structure and chemistry of passivated SiC/SiO2 interfaces

Applied physics letters, 2016-05, Vol.108 (20)

2016

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27 kV, 20 A 4H-SiC n-IGBTs

Materials science forum, 2015-06, Vol.821-823, p.847-850

2015

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Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

Materials science forum, 2018-06, Vol.924, p.137-142

2018

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Status and prospects for SiC power MOSFETs

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.658-664

2002

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High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

IEEE transactions on power electronics, 2015-06, Vol.30 (6), p.2891-2895

2015

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650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout

Key engineering materials, 2023-06, Vol.948, p.95-99

2023

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Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

Materials science forum, 2014-02, Vol.778-780, p.967-970

2014

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High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation

Materials Science Forum, 2016-05, Vol.858, p.671-676

2016

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Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

Materials Science Forum, 2016-05, Vol.858, p.167-172

2016

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Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

Materials science forum, 2019-07, Vol.963, p.745-748

2019

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SiC power Schottky and PiN diodes

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.665-672

2002

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15 kV n-GTOs in 4H-SiC

Materials science forum, 2019-07, Vol.963, p.651-654

2019

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Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

Materials science forum, 2018-06, Vol.924, p.559-562

2018

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4H-SiC Trench Schottky Diodes for Next Generation Products

Materials science forum, 2013-01, Vol.740-742, p.781-784

2013

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Insulator investigation on SiC for improved reliability

IEEE transactions on electron devices, 1999-03, Vol.46 (3), p.525-532

1999

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High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Materials science forum, 2015-06, Vol.821-823, p.749-752

2015

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Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Materials science forum, 2014-02, Vol.778-780, p.1089-1095, Article 1089

2014

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Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

Materials science forum, 2020-07, Vol.1004, p.992-997, Article 992

2020

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Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Development of 15 kV 4H-SiC IGBTs

Materials science forum, 2012-05, Vol.717-720, p.1135-1138

2012

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Electrical properties and interface structure of SiC MOSFETs with barium interface passivation

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit

Materials science forum, 2015-06, Vol.821-823, p.765-768

2015

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Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.8B.1-1-8B.1-6

2022

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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions

Structure and chemistry of passivated SiC/SiO2 interfaces

27 kV, 20 A 4H-SiC n-IGBTs

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

Status and prospects for SiC power MOSFETs

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

SiC power Schottky and PiN diodes

15 kV n-GTOs in 4H-SiC

Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout

4H-SiC Trench Schottky Diodes for Next Generation Products

Insulator investigation on SiC for improved reliability

High-Mobility SiC MOSFETs with Chemically Modified Interfaces

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

Development of 15 kV 4H-SiC IGBTs

Electrical properties and interface structure of SiC MOSFETs with barium interface passivation

CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

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