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Status and prospects for SiC power MOSFETs

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.658-664

2002

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IEEE_Xplore

Insulator investigation on SiC for improved reliability

IEEE transactions on electron devices, 1999-03, Vol.46 (3), p.525-532

1999

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IEEE_Xplore

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

IEEE electron device letters, 2001-04, Vol.22 (4), p.176-178

2001

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IEEE_Xplore

SiC power Schottky and PiN diodes

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.665-672

2002

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IEEE_Xplore

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

IEEE electron device letters, 1999-04, Vol.20 (4), p.161-163

1999

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IEEE_Xplore

1800 V NPN bipolar junction transistors in 4H-SiC

IEEE electron device letters, 2001-03, Vol.22 (3), p.124-126

2001

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IEEE_Xplore

SiC microwave power technologies

Proceedings of the IEEE, 2002-06, Vol.90 (6), p.987-992

2002

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IEEE_Xplore

Large area, ultra-high voltage 4H-SiC p-i-n rectifiers

IEEE transactions on electron devices, 2002-12, Vol.49 (12), p.2308-2316

2002

Link zum Volltext
IEEE_Xplore

High-power 4H-SiC JBS rectifiers

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.2054-2063

2002

Link zum Volltext
IEEE_Xplore

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1703-1710

2001

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IEEE_Xplore

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1245-1249

2006

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IEEE_Xplore

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

Proceedings of the IEEE, 1991-05, Vol.79 (5), p.677-701

1991

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IEEE_Xplore

High temperature SiC trench gate p-IGBTs

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.774-784

2003

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IEEE_Xplore

3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC

IEEE electron device letters, 2001-03, Vol.22 (3), p.127-129

2001

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IEEE_Xplore

Progress in SiC: from material growth to commercial device development

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.1-8

1999

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Development of high-current 4H-SiC ACCUFET

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.471-478

2003

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IEEE_Xplore

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

Semiconductors (Woodbury, N.Y.), 2016-05, Vol.50 (5), p.656-661

2016

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Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.225-231

2017

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Silicon carbide high-power devices

IEEE transactions on electron devices, 1996-10, Vol.43 (10), p.1732-1741

1996

Link zum Volltext
IEEE_Xplore

High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base

Semiconductors (Woodbury, N.Y.), 2016-03, Vol.50 (3), p.404-410

2016

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Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

Materials science & engineering. B, Solid-state materials for advanced technology, 1988-08, Vol.1 (1), p.77-104

1988

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Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor

Semiconductors (Woodbury, N.Y.), 2013, Vol.47 (1), p.116-121

2013

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Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread

Semiconductors (Woodbury, N.Y.), 2012-09, Vol.46 (9), p.1201-1206

2012

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Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.327-334

2013

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Transient processes in high-voltage silicon carbide bipolar-junction transistors

Semiconductors (Woodbury, N.Y.), 2013-08, Vol.47 (8), p.1068-1074

2013

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Status and prospects for SiC power MOSFETs

Insulator investigation on SiC for improved reliability

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

SiC power Schottky and PiN diodes

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

1800 V NPN bipolar junction transistors in 4H-SiC

SiC microwave power technologies

Large area, ultra-high voltage 4H-SiC p-i-n rectifiers

High-power 4H-SiC JBS rectifiers

"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

High temperature SiC trench gate p-IGBTs

3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC

Progress in SiC: from material growth to commercial device development

Development of high-current 4H-SiC ACCUFET

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors

Silicon carbide high-power devices

High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor

Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread

Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection

Transient processes in high-voltage silicon carbide bipolar-junction transistors

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