UB Paderborn / Katalog / Suche / in CDI

PbTe and SnTe quantum dot precipitates in a CdTe matrix fabricated by ion implantation

Journal of applied physics, 2009-08, Vol.106 (4), p.043105-043105-5

2009

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Physics of Narrow Gap Semiconductors: Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14–17,1981

1982

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Optically active erbium centers in silicon

Physical review. B, Condensed matter, 1996-07, Vol.54 (4), p.2532-2547

1996

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Range evaluation in SIMS depth profiles of Er-implantations in silicon

Applied surface science, 2005-09, Vol.252 (1), p.271-277

2005

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Modification and nano-patterning of high-Tc superconducting thin films by masked ion beam irradiation

Journal of physics. Conference series, 2010-06, Vol.234 (1), p.012005

2010

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On the influence of hydrogen on the erbium-related luminescence in silicon

Applied physics letters, 2003-07, Vol.83 (4), p.623-625

2003

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Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures

Journal of applied physics, 2001-09, Vol.90 (5), p.2252-2256

2001

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On the environment of optically active Er in Si-electroluminescence devices

Applied physics letters, 1998-02, Vol.72 (7), p.809-811

1998

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Defect levels in H+-, D+-, and He+-bombarded silicon

Journal of applied physics, 1992-09, Vol.72 (6), p.2167-2173

1992

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Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-01, Vol.242 (1-2), p.667-669

2006

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Damage and polymerization by ion bombardment of C60

Applied physics letters, , Vol.65 (5), p.543-545

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Range of ion-implanted rare earth elements in Si and SiO2

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-04, Vol.81 (1-3), p.83-85

2001

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Multiscale approach for the analysis of channeling profile measurements of ion implantation damage

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-01, Vol.228 (1-4), p.360-363

2005

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Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence

Journal of applied physics, 2005-08, Vol.98 (3), p.033517-033517-5

2005

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Different Er centres in Si and their use for electroluminescent devices

Journal of luminescence, 1998-12, Vol.80 (1), p.9-17

1998

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On the local structure of optically active Er centers in Si

Applied physics letters, 1995-01, Vol.66 (4), p.490-492

1995

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1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon

Applied physics letters, 1999-01, Vol.74 (4), p.537-539

1999

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Direct excitation spectroscopy of Er centers in porous silicon

Applied physics letters, 1997-11, Vol.71 (20), p.2975-2977

1997

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Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation

Journal of applied physics, 1995-04, Vol.77 (8), p.3697-3703

1995

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Low Z total reflection X-ray fluorescence analysis — challenges and answers

Spectrochimica acta. Part B: Atomic spectroscopy, 1999-10, Vol.54 (10), p.1433-1441

1999

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Modification and nano-patterning of high-T c superconducting thin films by masked ion beam irradiation

Journal of physics. Conference series, 2010, Vol.234 (1), p.12005

2010

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Room-temperature photoluminescence excitation spectroscopy of Er3+ ions in Er- and (Er+Yb)-doped SiO2 films

Applied physics letters, 1999-10, Vol.75 (14), p.2041-2043

1999

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Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon

Applied physics letters, 1998-11, Vol.73 (20), p.2929-2931

1998

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Nonuniform-channel MOS device

Applied physics. A, Materials science & processing, 2003-05, Vol.76 (7), p.1035-1039

2003

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Luminescence enhancement by hydrogenation of Si:Er,O

Physica. E, Low-dimensional systems & nanostructures, 2003-03, Vol.16 (3), p.347-350

2003

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PbTe and SnTe quantum dot precipitates in a CdTe matrix fabricated by ion implantation

Physics of Narrow Gap Semiconductors: Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14–17,1981

Optically active erbium centers in silicon

Range evaluation in SIMS depth profiles of Er-implantations in silicon

Modification and nano-patterning of high-Tc superconducting thin films by masked ion beam irradiation

On the influence of hydrogen on the erbium-related luminescence in silicon

Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures

On the environment of optically active Er in Si-electroluminescence devices

Defect levels in H+-, D+-, and He+-bombarded silicon

Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements

Damage and polymerization by ion bombardment of C60

Range of ion-implanted rare earth elements in Si and SiO2

Multiscale approach for the analysis of channeling profile measurements of ion implantation damage

Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence

Different Er centres in Si and their use for electroluminescent devices

On the local structure of optically active Er centers in Si

1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon

Direct excitation spectroscopy of Er centers in porous silicon

Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation

Low Z total reflection X-ray fluorescence analysis — challenges and answers

Modification and nano-patterning of high-T c superconducting thin films by masked ion beam irradiation

Room-temperature photoluminescence excitation spectroscopy of Er3+ ions in Er- and (Er+Yb)-doped SiO2 films

Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon

Nonuniform-channel MOS device

Luminescence enhancement by hydrogenation of Si:Er,O

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