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Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

Nano letters, 2013-07, Vol.13 (7), p.3237-3242

2013

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Comprehensive Analysis of Graphene Geometric Diodes: Role of Geometrical Asymmetry and Electrostatic Effects

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1294-1301

2024

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General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1149-1156

2020

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Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3646-3653

2018

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Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors

Solid-state electronics, 2014-08, Vol.98, p.63-69

2014

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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1745-1751

2024

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Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2727-2735

2005

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Improved understanding of metal–graphene contacts

Microelectronic engineering, 2019-08, Vol.216, p.111035, Article 111035

2019

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Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.1033-1040

2018

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Underlap counterdoping as an efficient means to suppress lateral leakage in the electron-hole bilayer tunnel FET

Semiconductor science and technology, 2016-04, Vol.31 (4), p.45001

2016

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Modeling, simulation and design of the vertical Graphene Base Transistor

Microelectronic engineering, 2013-09, Vol.109, p.338-341

2013

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On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Journal of applied physics, 2012-08, Vol.112 (3)

2012

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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2086-2096

2008

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A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1810-1814

2019

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Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

IEEE transactions on electron devices, 2007-05, Vol.54 (5), p.1156-1164

2007

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Study of gain, noise, and collection efficiency of GaAs SAM-APDs single pixel

Journal of instrumentation, 2022-12, Vol.17 (12), p.C12020

2022

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On the Apparent Mobility in Nanometric n-MOSFETs

IEEE electron device letters, 2007-11, Vol.28 (11), p.1036-1039

2007

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Microscopic scale characterization and modeling of transistor degradation under HC stress

Microelectronics and reliability, 2012-11, Vol.52 (11), p.2513-2520

2012

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On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1634-1640

2006

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Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model

Solid-state electronics, 2013-11, Vol.89, p.161-166

2013

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Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

Frontiers in physics, 2022-08, Vol.10

2022

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Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2736-2743

2005

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Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.1980-1990

2009

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Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions

Journal of instrumentation, 2019-01, Vol.14 (1), p.C01003-C01003

2019

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Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

IEEE transactions on circuits and systems. I, Regular papers, 2009-05, Vol.56 (5), p.920-932

2009

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Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

Comprehensive Analysis of Graphene Geometric Diodes: Role of Geometrical Asymmetry and Electrostatic Effects

General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors

Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating

Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors

Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

Improved understanding of metal–graphene contacts

Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron-hole bilayer tunnel FET

Modeling, simulation and design of the vertical Graphene Base Transistor

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

Study of gain, noise, and collection efficiency of GaAs SAM-APDs single pixel

On the Apparent Mobility in Nanometric n-MOSFETs

Microscopic scale characterization and modeling of transistor degradation under HC stress

On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices

Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model

Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions

Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

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