UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Adaptive physical rate based admission control at EDCA in IEEE 802.11e WLANs

Electronics letters, 2007-10, Vol.43 (22), p.1208-1209

2007

Volltextzugriff (PDF)

An integrated hybrid device for binary-phase-shift-keying subcarrier modulation

IEEE photonics technology letters, 2000-05, Vol.12 (5), p.516-518

2000

Volltextzugriff (PDF)

Optical BPSK subcarrier modulation using integrated hybrid device

Electronics letters, 2000-10, Vol.36 (21), p.1797-1798

2000

Volltextzugriff (PDF)

Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n -type GaAs

Journal of applied physics, 1996-10, Vol.80 (7), p.3904-3909

1996

Volltextzugriff (PDF)

Low dissipation power and high linearity PCS power amplifier with adaptive gate bias control circuit

Electronics letters, 1996, Vol.32 (17), p.1533-1535

1996

Volltextzugriff (PDF)

A Low Distortion and Low Dissipation Power Amplifier with Gate Bias Control Circuit for Digital/Analog Dual‐Mode Cellular Phones

ETRI journal, 1997-07, Vol.19 (2), p.35-47, Article 35

1997

Volltextzugriff (PDF)

Characterization of catastrophic optical damage in Al-free InGaAs/InGaP 0.98 μm high-power lasers

Applied physics letters, 1998-11, Vol.73 (18), p.2567-2569

1998

Volltextzugriff (PDF)

Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1-x-yAs (x + y = 0.47-8) buffer layer

Journal of crystal growth, 1997-05, Vol.177 (1-2), p.28-32

1997

Volltextzugriff (PDF)

Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

IEEE photonics technology letters, 2000-02, Vol.12 (2), p.140-142

2000

Volltextzugriff (PDF)

Fabrication of InP-Based Reflection Type Arrayed Waveguide Grating with Metal Coated Reflection Facet

Japanese Journal of Applied Physics, 2001-01, Vol.40 (1A), p.L36-L37

2001

Volltextzugriff (PDF)

High-low doped power MESFET with 32.0 dBm output power for 3.0 V digital/analogue dual-mode hand-held telephones

Electronics letters, 1995-08, Vol.31 (16), p.1390-1391, Article 1390

1995

Volltextzugriff (PDF)

Failure analysis for RF characteristics of GaAs MESFETs

Microelectronics and reliability, 1999, Vol.39 (1), p.69-75

1999

Volltextzugriff (PDF)

Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz

ETRI journal, 1996-10, Vol.18 (3), p.171-179

1996

Volltextzugriff (PDF)

Adaptive Physical Rate based Admission Control at EDCA in IEEE 802.11e WLANs

Electronics letters, 2007-10, Vol.43 (22), p.1-1

2007

Volltextzugriff (PDF)

Fabrication of wavelength-tunable InGaAsP/InP grating-assisted codirectional coupler filter with very narrow bandwidth

Electronics letters, 1997-04, Vol.33 (9), p.773

1997

Volltextzugriff (PDF)

Degradation mechanism of GaAs MESFETs

Microelectronics and reliability, 1998-01, Vol.38 (1), p.171-178

1998

Volltextzugriff (PDF)

V-shaped defects in InxGa1−xAs/In0.52Al0.48As/InP pseudomorphic high electron mobility transistor structure

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-06, Vol.47 (2), p.145-149

1997

Volltextzugriff (PDF)

Quantitative evaluation of passive-aligned laser diode-to-fiber coupling

1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206), 1998, p.1459-1463

1998

Volltextzugriff (PDF)

Molecular beam epitaxy growth of indium-rich InxGa1-xAs/InyAl1-yAs/InP structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer

Journal of crystal growth, 1996-12, Vol.169 (3), p.435-442

1996

Volltextzugriff (PDF)

High-low doped power MESFET with 32.0dBm output power for 3.0V digital/analogue dual-mode hand-held telephones

Electronics letters, 1995-08, Vol.31 (16), p.1390-1391

1995

Volltextzugriff (PDF)

Room temperature photoluminescence studies of δ-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures

Solid state communications, 1996, Vol.99 (10), p.713-716

1996

Volltextzugriff (PDF)

Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure

Japanese journal of applied physics, 1997, Vol.36 (10B), p.L1364-L1366

1997

Volltextzugriff (PDF)

Pd/Ge-based ohmic contacts to n-InGaAs and n-GaAs for heterojunction bipolar transistors

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.455-458

1997

Volltextzugriff (PDF)

Optical BPSK subcarrier modulation using integrated hybrid device

Electronics letters, 2000-10, Vol.36 (21), p.1-1

2000

Volltextzugriff (PDF)

Improvement of kink and beam steering characteristics of 0.98-mum GaInAs-GaInP high-power lasers utilizing channel ion implantation

IEEE photonics technology letters, 2000-02, Vol.12 (2), p.140-142

2000

Volltextzugriff (PDF)

1 – 25 von 65

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(40)
Mit Volltextzugriff
(54)

Publikationsform

Artikel
(48)
Tagungsberichte
(17)

Sprache

Englisch
(64)
Koreanisch
(1)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Adaptive physical rate based admission control at EDCA in IEEE 802.11e WLANs

An integrated hybrid device for binary-phase-shift-keying subcarrier modulation

Optical BPSK subcarrier modulation using integrated hybrid device

Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n -type GaAs

Low dissipation power and high linearity PCS power amplifier with adaptive gate bias control circuit

A Low Distortion and Low Dissipation Power Amplifier with Gate Bias Control Circuit for Digital/Analog Dual‐Mode Cellular Phones

Characterization of catastrophic optical damage in Al-free InGaAs/InGaP 0.98 μm high-power lasers

Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1-x-yAs (x + y = 0.47-8) buffer layer

Improvement of kink and beam steering characteristics of 0.98-μm GaInAs-GaInP high-power lasers utilizing channel ion implantation

Fabrication of InP-Based Reflection Type Arrayed Waveguide Grating with Metal Coated Reflection Facet

High-low doped power MESFET with 32.0 dBm output power for 3.0 V digital/analogue dual-mode hand-held telephones

Failure analysis for RF characteristics of GaAs MESFETs

Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz

Adaptive Physical Rate based Admission Control at EDCA in IEEE 802.11e WLANs

Fabrication of wavelength-tunable InGaAsP/InP grating-assisted codirectional coupler filter with very narrow bandwidth

Degradation mechanism of GaAs MESFETs

V-shaped defects in InxGa1−xAs/In0.52Al0.48As/InP pseudomorphic high electron mobility transistor structure

Quantitative evaluation of passive-aligned laser diode-to-fiber coupling

Molecular beam epitaxy growth of indium-rich InxGa1-xAs/InyAl1-yAs/InP structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer

High-low doped power MESFET with 32.0dBm output power for 3.0V digital/analogue dual-mode hand-held telephones

Room temperature photoluminescence studies of δ-doped pseudomorphic high electron mobility transistor AlGaAs/InGaAs/GaAs structures

Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure

Pd/Ge-based ohmic contacts to n-InGaAs and n-GaAs for heterojunction bipolar transistors

Optical BPSK subcarrier modulation using integrated hybrid device

Improvement of kink and beam steering characteristics of 0.98-mum GaInAs-GaInP high-power lasers utilizing channel ion implantation

Suchergebnisse filtern