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Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays

Solid-state electronics, 2005-11, Vol.49 (11), p.1722-1727

2005

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Silicon nanocrystal based memory devices for NVM and DRAM applications

Solid-state electronics, 2004-09, Vol.48 (9), p.1463-1473

2004

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Silicon nanocrystal non-volatile memory for embedded memory scaling

Microelectronics and reliability, 2007-04, Vol.47 (4), p.585-592

2007

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A model for the channel potential of charge-trapping memories and its implications for device scaling

Solid-state electronics, 2005-11, Vol.49 (11), p.1754-1758

2005

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High quantum efficiency photoluminescence from localized excitons in Si1-xGex

Applied physics letters, 1992-06, Vol.60 (25), p.3174-3176

1992

Volltextzugriff (PDF)

Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

IEEE electron device letters, 1991-12, Vol.12 (12), p.661-663

1991

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Reduction of p+-n+ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

IEEE electron device letters, 1991-04, Vol.12 (4), p.163-165

1991

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Band-gap shifts in silicon-germanium heterojunction bipolar transistors

Applied physics letters, 1989-06, Vol.54 (26), p.2707-2709

1989

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The effects of base dopant outdiffusion and undoped Si1-xGex junction spacer layers in Si/Si1-xGex/Si heterojunction bipolar transistors

IEEE electron device letters, 1991-02, Vol.12 (2), p.42-44

1991

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Graded-base Si/Si1-xGex/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

IEEE electron device letters, 1991-06, Vol.12 (6), p.303-305

1991

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An embedded 90nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase

2002

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Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

MRS proceedings, 1991, Vol.220, Article 445

1991

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Nanocrystal physical attributes influencing non-volatile memory performance

63rd Device Research Conference Digest, 2005. DRC '05, 2005, Vol.1, p.37-38

2005

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An embedded silicon nanocrystal nonvolatile memory for the 90nm technology node operating at 6V

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 2004, p.31-35

2004

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Current gain-Early voltage products in graded-base Si/Si(1-x )Ge(x)/Si heterojunction bipolar transistors

IEEE transactions on electron devices, 1991-12, Vol.38 (12), p.2695-2696

1991

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Base resistance and effective bandgap reduction in n-p-nSi/Si(1-x)Ge(x)/Si HBTs with heavy base doping

IEEE transactions on electron devices, 1996-03, Vol.43 (3), p.457-466

1996

Volltextzugriff (PDF)

Graded-base Si/Si(1-x)Ge(x)/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

IEEE electron device letters, 1991-06, Vol.12, p.303-305

1991

Volltextzugriff (PDF)

Graded-base Si/Si(1-x)Ge(x)/Si heterojunctionbipolar transistors grown by rapid thermal chemical vapor depositionwith near-ideal electrical characteristics

IEEE electron device letters, 1991-06, Vol.12 (6), p.303-305

1991

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A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic

IEEE transactions on electron devices, 1992-11, Vol.39 (11), p.2636-2637

1992

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Graded-base Si/Si sub(1-x)Ge sub(x)/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

IEEE electron device letters, 1991-01, Vol.12 (6), p.303-305

1991

Volltextzugriff (PDF)

Reduction of p(+)-n(+) junction tunneling currentfor base current improvement in Si/SiGe/Si heterojunction bipolartransistors

IEEE electron device letters, 1991-04, Vol.12 (4), p.163-165

1991

Volltextzugriff (PDF)

The effects of base dopant outdiffusion and undopedSi(1-x)Ge(x) junction spacer layers in Si/Si(1-x)Ge(x)/Si heterojunction bipolar transistors

IEEE electron device letters, 1991-02, Vol.12 (2), p.42-44

1991

Volltextzugriff (PDF)

The effects of base dopant outdiffusion and undoped Si sub(1-x)Ge sub(x) junction spacer layers in Si/Si sub(1-x)Ge sub(x)/Si heterojunction bipolar transistors

IEEE electron device letters, 1991-01, Vol.12 (2), p.42-44

1991

Volltextzugriff (PDF)

Reduction of p super(+)-n super(+) junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

IEEE electron device letters, 1991-01, Vol.12 (4), p.163-165

1991

Volltextzugriff (PDF)

High quantum efficiency photoluminescence from localized excitons in Si1− x Ge x

Applied physics letters, 1992-06, Vol.60 (25), p.3174-3176

1992

Volltextzugriff (PDF)

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Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays

Silicon nanocrystal based memory devices for NVM and DRAM applications

Silicon nanocrystal non-volatile memory for embedded memory scaling

A model for the channel potential of charge-trapping memories and its implications for device scaling

High quantum efficiency photoluminescence from localized excitons in Si1-xGex

Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

Reduction of p+-n+ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

Band-gap shifts in silicon-germanium heterojunction bipolar transistors

The effects of base dopant outdiffusion and undoped Si1-xGex junction spacer layers in Si/Si1-xGex/Si heterojunction bipolar transistors

Graded-base Si/Si1-xGex/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

An embedded 90nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase

Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

Nanocrystal physical attributes influencing non-volatile memory performance

An embedded silicon nanocrystal nonvolatile memory for the 90nm technology node operating at 6V

Current gain-Early voltage products in graded-base Si/Si(1-x )Ge(x)/Si heterojunction bipolar transistors

Base resistance and effective bandgap reduction in n-p-nSi/Si(1-x)Ge(x)/Si HBTs with heavy base doping

Graded-base Si/Si(1-x)Ge(x)/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

Graded-base Si/Si(1-x)Ge(x)/Si heterojunctionbipolar transistors grown by rapid thermal chemical vapor depositionwith near-ideal electrical characteristics

A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic

Graded-base Si/Si sub(1-x)Ge sub(x)/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

Reduction of p(+)-n(+) junction tunneling currentfor base current improvement in Si/SiGe/Si heterojunction bipolartransistors

The effects of base dopant outdiffusion and undopedSi(1-x)Ge(x) junction spacer layers in Si/Si(1-x)Ge(x)/Si heterojunction bipolar transistors

The effects of base dopant outdiffusion and undoped Si sub(1-x)Ge sub(x) junction spacer layers in Si/Si sub(1-x)Ge sub(x)/Si heterojunction bipolar transistors

Reduction of p super(+)-n super(+) junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

High quantum efficiency photoluminescence from localized excitons in Si1− x Ge x

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