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Made-to-measure models of the Galactic box/peanut bulge: stellar and total mass in the bulge region

Monthly notices of the Royal Astronomical Society, 2015-03, Vol.448 (1), p.713-731

2015

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Epitaxial graphene on cubic SiC(111)/Si(111) substrate

Applied physics letters, 2010-05, Vol.96 (19), p.191910-191910-3

2010

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Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

Nature communications, 2015-04, Vol.6 (1), p.6806-6806, Article 6806

2015

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Comparative study of vent and seep macrofaunal communities in the Guaymas Basin

Biogeosciences, 2015-09, Vol.12 (18), p.5455-5479

2015

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Semipolar (10-11) GaN growth on silicon-on-insulator substrates: Defect reduction and meltback etching suppression

Journal of applied physics, 2019-01, Vol.125 (3)

2019

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Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

Applied physics letters, 2010-10, Vol.97 (17), p.171909-171909-3

2010

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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

Journal of crystal growth, 2017-11, Vol.477, p.262-266

2017

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Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Journal of applied physics, 2014-08, Vol.116 (5)

2014

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Evidence of electrical activity of extended defects in 3C-SiC grown on Si

Applied physics letters, 2010-04, Vol.96 (14), p.142104-142104-3

2010

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Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties

Physical review. B, Condensed matter and materials physics, 2010-09, Vol.82 (12), Article 125445

2010

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Structural coherency of epitaxial graphene on 3C-SiC(111)epilayers on Si(111)

Applied physics letters, 2010-10, Vol.97 (16), p.161905-161905-3

2010

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High temperature annealing and CVD growth of few‐layer graphene on bulk AlN and AlN templates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

Journal of crystal growth, 2008-06, Vol.310 (13), p.3174-3182

2008

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Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Journal of crystal growth, 2012-06, Vol.349 (1), p.27-35

2012

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Structural trends in Si dots formation on SiC surfaces using CVD environment

Journal of crystal growth, 2014-10, Vol.404, p.157-163

2014

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Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

Journal of applied physics, 2012-03, Vol.111 (5), p.053507-053507-8

2012

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Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

Physical review. B, Condensed matter and materials physics, 2014-02, Vol.89 (8), Article 085422

2014

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Original 3C-SiC micro-structure on a 3C–SiC pseudo-substrate

Microelectronic engineering, 2013-05, Vol.105, p.65-67

2013

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Elaboration of (1 1 1) oriented 3C–SiC/Si layers for template application in nitride epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.9-14

2009

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Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.981-986

2007

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Simulation and optimization of the nSiC layer’s thickness in a nSiC/Si photovoltaic cell

Materials and devices : an international scientific journal, 2019-06, Vol.4 (1)

2019

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A new approach for AFM cantilever elaboration with 3C-SiC

Materials letters, 2012-06, Vol.77, p.54-56

2012

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A graphene electron lens

Applied physics letters, 2012-04, Vol.100 (15), p.153106-153106-3

2012

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Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-09, Vol.269 (18), p.2020-2025

2011

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Made-to-measure models of the Galactic box/peanut bulge: stellar and total mass in the bulge region

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

Comparative study of vent and seep macrofaunal communities in the Guaymas Basin

Semipolar (10-11) GaN growth on silicon-on-insulator substrates: Defect reduction and meltback etching suppression

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Evidence of electrical activity of extended defects in 3C-SiC grown on Si

Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties

Structural coherency of epitaxial graphene on 3C-SiC(111)epilayers on Si(111)

High temperature annealing and CVD growth of few‐layer graphene on bulk AlN and AlN templates

Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Structural trends in Si dots formation on SiC surfaces using CVD environment

Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

Original 3C-SiC micro-structure on a 3C–SiC pseudo-substrate

Elaboration of (1 1 1) oriented 3C–SiC/Si layers for template application in nitride epitaxy

Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

Simulation and optimization of the nSiC layer’s thickness in a nSiC/Si photovoltaic cell

A new approach for AFM cantilever elaboration with 3C-SiC

A graphene electron lens

Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC

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