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Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

Physical review letters, 2005-12, Vol.95 (25), p.257402.1-257402.4, Article 257402

2005

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Quantum-dot semiconductor disk lasers

Journal of crystal growth, 2008-11, Vol.310 (23), p.5182-5186

2008

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Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots

Journal of crystal growth, 2008-11, Vol.310 (23), p.5066-5068

2008

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Size-dependence of anisotropic exchange interaction in InAs/GaAs quantum dots

Physica Status Solidi (b), 2006-12, Vol.243 (15), p.3937-3941

2006

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Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection

Applied physics letters, 2012-11, Vol.101 (21)

2012

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Limits of In(Ga)As/GaAs quantum dot growth

Physica Status Solidi (b), 2009-04, Vol.246 (4), p.717-720

2009

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InN growth on sapphire using different nitridation procedures

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1622-1625

2006

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High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots

Applied physics letters, 2008-03, Vol.92 (10)

2008

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InN growth and annealing investigations using in-situ spectroscopic ellipsometry

Journal of crystal growth, 2004-12, Vol.272 (1), p.87-93

2004

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Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy

Journal of crystal growth, 2004-12, Vol.272 (1), p.143-147

2004

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Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

Physica status solidi. A, Applications and materials science, 2006-01, Vol.203 (1), p.158-161

2006

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Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

Applied physics letters, 1998-02, Vol.72 (8), p.942-944

1998

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Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy

Physical review. B, Condensed matter and materials physics, 2015-06, Vol.91 (23), Article 235418

2015

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Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers

Journal of crystal growth, 2004-12, Vol.272 (1), p.415-419

2004

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Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

Physical review. B, 2016-02, Vol.93 (8), Article 085302

2016

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Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

Applied physics letters, 2001-01, Vol.78 (1), p.82-84

2001

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Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths

Journal of crystal growth, 2004-12, Vol.272 (1), p.154-160

2004

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Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE

Physica status solidi. A, Applications and materials science, 2005-04, Vol.202 (5), p.781-784

2005

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Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures

Applied physics letters, 2000-02, Vol.76 (6), p.685-687

2000

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Control of fine-structure splitting and excitonic binding energies in selected individual InAs∕GaAs quantum dots

Applied physics letters, 2006-12, Vol.89 (26)

2006

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In situ spectroscopic ellipsometry study of GaN nucleation layer growth and annealing on sapphire in metal-organic vapor-phase epitaxy

Journal of applied physics, 2005-08, Vol.98 (3), p.033522-033522-5

2005

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Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance

Journal of crystal growth, 2004-12, Vol.272 (1), p.76-80

2004

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Atomic structure of closely stacked InAs submonolayer depositions in GaAs

Journal of applied physics, 2012-10, Vol.112 (8)

2012

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Spectroscopic ellipsometry during metalorganic vapor phase epitaxy of InN

Journal of crystal growth, 2003-02, Vol.248, p.523-527

2003

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Low Thermal Impedance of Substrate-Free Metal Cavity Surface-Emitting Microlasers

IEEE photonics technology letters, 2011-08, Vol.23 (15), p.1031-1033

2011

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Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

Quantum-dot semiconductor disk lasers

Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots

Size-dependence of anisotropic exchange interaction in InAs/GaAs quantum dots

Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection

Limits of In(Ga)As/GaAs quantum dot growth

InN growth on sapphire using different nitridation procedures

High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots

InN growth and annealing investigations using in-situ spectroscopic ellipsometry

Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy

Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy

Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths

Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE

Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures

Control of fine-structure splitting and excitonic binding energies in selected individual InAs∕GaAs quantum dots

In situ spectroscopic ellipsometry study of GaN nucleation layer growth and annealing on sapphire in metal-organic vapor-phase epitaxy

Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance

Atomic structure of closely stacked InAs submonolayer depositions in GaAs

Spectroscopic ellipsometry during metalorganic vapor phase epitaxy of InN

Low Thermal Impedance of Substrate-Free Metal Cavity Surface-Emitting Microlasers

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