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Optical and electrical properties of ultrathin transparent nanocrystalline boron-doped diamond electrodes

Optical materials, 2015-04, Vol.42, p.24-34

2015

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Electrical Characterization of Diamond Boron Doped Diamond Nanostructures for Use in Harsh Environment Applications

IOP conference series. Materials Science and Engineering, 2016-01, Vol.104 (1), p.12022-12028

2016

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Ballistic and tunneling GaAs static induction transistors: nano-devices for THz electronics

IEEE transactions on electron devices, 2002-07, Vol.49 (7), p.1102-1111

2002

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240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

IEEE transactions on electron devices, 2003-04, Vol.50 (4), p.867-873

2003

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GaAs area-selective regrowth with molecular layer epitaxy for integration of low noise and power transistors, and Schottky diodes

Physica status solidi. C, 2008-07, Vol.5 (9), p.2799-2801, Article 2799

2008

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GaAs TUNNETT diodes oscillating at 430-655 GHz in CW fundamental mode

IEEE microwave and wireless components letters, 2005-09, Vol.15 (9), p.597-599

2005

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Oscillation frequency control of 60 GHz-band TUNNETT diodes

Electronics letters, 2002-06, Vol.38 (13), p.660-661

2002

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Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp 3 /sp 2 Raman Band Ratio

Acta physica Polonica, A, 2015-07, Vol.128 (1), p.136-140

2015

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706-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

Physica status solidi. C, 2008-07, Vol.5 (9), p.2802-2804

2008

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290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

Electronics letters, 2005-03, Vol.41 (7), p.441-443

2005

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Ideal static induction transistor implemented with molecular layer epitaxy

Applied surface science, 1994-12, Vol.82 (1-4), p.91-96

1994

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Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n(+)-i-p(+)-i-n(+) structures

IEEE transactions on electron devices, 1997-01, Vol.44 (1), p.195-197

1997

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Chemical Vapor Deposited Tungsten Film on Molecular Layer Epitaxially-Grown GaAs and its Application to Low Resistivity Contact

MRS proceedings, 1999, Vol.573, Article 175

1999

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290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

Electronics letters, 2005-03, Vol.41 (7), p.1-1

2005

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290–393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

Electronics letters, 2005, Vol.41 (7), p.441

2005

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Sub-terahertz imaging for construction materials

2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves, 2008, p.1-2

2008

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Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3

Journal of crystal growth, 2002-10, Vol.244 (3-4), p.236-242

2002

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Oscillation frequency control of 60 GHz-band TUNNETT diodes

Electronics letters, 2002-06, Vol.38 (13), p.1-1

2002

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Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1998, p.179-182

1998

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Tunnett diode oscillators for mm-wave wideband communication and for terahertz electronics

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006, 2006, p.52-57

Plotka, P.

2006

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Growth rate reduction in self -limiting growth of doped GaAs by molecular layer epitaxy

Materials science in semiconductor processing, 2003-10, Vol.6 (5), p.429-431

2003

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Optimization of low temperature surface treatment of GaAs crystal

Surface science, 1996-03, Vol.348 (1), p.105-114

1996

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Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Applied surface science, 1994-12, Vol.82 (1-4), p.41-45

1994

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Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n/sup +/-i-p/sup +/-i-n/sup +/ structures

IEEE transactions on electron devices, 1997-01, Vol.44 (1), p.195-197

1997

Volltextzugriff (PDF)

Low‐Resistance Contacts with Chemical Vapor Deposited Tungsten on GaAs Grown by Molecular Layer Epitaxy

Journal of the Electrochemical Society, 1999-01, Vol.146 (1), p.131-136

1999

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Optical and electrical properties of ultrathin transparent nanocrystalline boron-doped diamond electrodes

Electrical Characterization of Diamond Boron Doped Diamond Nanostructures for Use in Harsh Environment Applications

Ballistic and tunneling GaAs static induction transistors: nano-devices for THz electronics

240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

GaAs area-selective regrowth with molecular layer epitaxy for integration of low noise and power transistors, and Schottky diodes

GaAs TUNNETT diodes oscillating at 430-655 GHz in CW fundamental mode

Oscillation frequency control of 60 GHz-band TUNNETT diodes

Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp 3 /sp 2 Raman Band Ratio

706-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

Ideal static induction transistor implemented with molecular layer epitaxy

Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n(+)-i-p(+)-i-n(+) structures

Chemical Vapor Deposited Tungsten Film on Molecular Layer Epitaxially-Grown GaAs and its Application to Low Resistivity Contact

290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

290–393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

Sub-terahertz imaging for construction materials

Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3

Oscillation frequency control of 60 GHz-band TUNNETT diodes

Low temperature formation of low resistivity W contact with ultra thin mixed layer on molecular layer epitaxially-grown GaAs

Tunnett diode oscillators for mm-wave wideband communication and for terahertz electronics

Growth rate reduction in self -limiting growth of doped GaAs by molecular layer epitaxy

Optimization of low temperature surface treatment of GaAs crystal

Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n/sup +/-i-p/sup +/-i-n/sup +/ structures

Low‐Resistance Contacts with Chemical Vapor Deposited Tungsten on GaAs Grown by Molecular Layer Epitaxy

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