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Recombination-induced stacking faults: evidence for a general mechanism in hexagonal SiC

Physical review letters, 2006-01, Vol.96 (2), p.025502-025502, Article 025502

2006

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Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias

Applied physics letters, 2002-07, Vol.81 (5), p.883-885

2002

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Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources

Journal of crystal growth, 2008-03, Vol.310 (6), p.1057-1061

2008

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Bright visible photoluminescence from silica nanotube flakes prepared by the sol–gel template method

Applied physics letters, 2002-01, Vol.80 (3), p.491-493

2002

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Chemomechanical Polishing of Silicon Carbide

Journal of the Electrochemical Society, 1997-06, Vol.144 (6), p.L161-L163

1997

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Yield and fracture properties of the wide band-gap semiconductor 4H-SiC

Journal of applied physics, 2003-03, Vol.93 (6), p.3279-3290

2003

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Growth defects in GaN films on sapphire: The probable origin of threading dislocations

Journal of materials research, 1996-03, Vol.11 (3), p.580-592

1996

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Light emission from silicon nanocrystals: Probing a single quantum dot

Applied surface science, 2006-05, Vol.252 (15), p.5249-5253

2006

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On micropipes and nanopipes in SiC and GaN

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1998-09, Vol.78 (3), p.727-736

Pirouz, P.

1998

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Nucleation and growth of deformation twins: a perspective based on the double-cross-slip mechanism of deformation twinning

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2002-10, Vol.82 (15), p.2841-2854

2002

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Polytypic transformations in SiC: the role of TEM

Ultramicroscopy, 1993-06, Vol.51 (1), p.189-214

1993

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Plastic behavior of 4H-SiC single crystals deformed at low strain rates

Scripta materialia, 2000-10, Vol.43 (9), p.865-870

2000

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On transition temperatures in the plasticity and fracture of semiconductors

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2001-05, Vol.81 (5), p.1207-1227

2001

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Stacking fault energy of 6H-SiC and 4H-SiC single crystals

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 2000-05, Vol.80 (4), p.919-935

2000

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Thermal and doping dependence of 4H-SiC polytype transformation

Applied physics letters, 2002-10, Vol.81 (15), p.2785-2787

2002

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Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC

Physica status solidi. A, Applications and materials science, 2007-07, Vol.204 (7), p.2216-2221

2007

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Mechanical properties of undoped GaAs. III: Indentation experiments

Acta materialia, 2007-09, Vol.55 (16), p.5526-5537

2007

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Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer

Journal of electronic materials, 2007-05, Vol.36 (5), p.539-542

2007

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Extended Defects in SiC and GaN Semiconductors

Materials science forum, 1998-01, Vol.264-268, p.399-408

Pirouz, P.

1998

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Effect of Test Temperature and Strain Rate on the Yield Stress of Monocrystalline 6H-SiC

Physica status solidi. A, Applied research, 1998-03, Vol.166 (1), p.155-169

1998

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Mechanical properties of undoped GaAs. Part I: Yield stress measurements

Acta materialia, 2007-09, Vol.55 (16), p.5500-5514

2007

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Deformation of 4H-SiC Single Crystals Oriented for Prism Slip

Materials science forum, 2004-06, Vol.457-460, p.371-374

2004

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A disclination model for the twin-twin intersection and the formation of diamond-hexagonal silicon and germanium

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1997-08, Vol.233 (1), p.139-144

1997

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The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals

Physica status solidi. B. Basic research, 2000-11, Vol.222 (1), p.75-93

2000

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Polytypic Transformations in SiC

Solid state phenomena, 1997-01, Vol.56, p.107-132

Pirouz, P.

1997

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Recombination-induced stacking faults: evidence for a general mechanism in hexagonal SiC

Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias

Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources

Bright visible photoluminescence from silica nanotube flakes prepared by the sol–gel template method

Chemomechanical Polishing of Silicon Carbide

Yield and fracture properties of the wide band-gap semiconductor 4H-SiC

Growth defects in GaN films on sapphire: The probable origin of threading dislocations

Light emission from silicon nanocrystals: Probing a single quantum dot

On micropipes and nanopipes in SiC and GaN

Nucleation and growth of deformation twins: a perspective based on the double-cross-slip mechanism of deformation twinning

Polytypic transformations in SiC: the role of TEM

Plastic behavior of 4H-SiC single crystals deformed at low strain rates

On transition temperatures in the plasticity and fracture of semiconductors

Stacking fault energy of 6H-SiC and 4H-SiC single crystals

Thermal and doping dependence of 4H-SiC polytype transformation

Possible formation mechanisms for surface defects observed in heteroepitaxially grown 3C-SiC

Mechanical properties of undoped GaAs. III: Indentation experiments

Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer

Extended Defects in SiC and GaN Semiconductors

Effect of Test Temperature and Strain Rate on the Yield Stress of Monocrystalline 6H-SiC

Mechanical properties of undoped GaAs. Part I: Yield stress measurements

Deformation of 4H-SiC Single Crystals Oriented for Prism Slip

A disclination model for the twin-twin intersection and the formation of diamond-hexagonal silicon and germanium

The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals

Polytypic Transformations in SiC

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