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Improvement of signal to noise ratio in electro optical probing technique by wavelets filtering

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1585-1591

2015

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Backside spectroscopic photon emission microscopy using intensified silicon CCD

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2105-2108

2014

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Simulation of the thermal stress induced by CW 1340 nm laser on 28 nm advanced technologies

Microelectronics and reliability, 2017-09, Vol.76-77, p.227-232

2017

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Frequency mapping in dynamic light emission with wavelet transform

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1387-1392

2013

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Pattern image enhancement by extended depth of field

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2099-2104

2014

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Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

Microelectronics and reliability, 2013-11, Vol.53 (9-11), p.1325-1328

2013

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High performance thermography with InGaAs photon counting camera

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2087-2092

2012

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A comprehensive study of the application of the EOP techniques on bipolar devices

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2088-2092

2014

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Optimum Si thickness for backside detection of photon emission using Si-CCD

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2031-2034

2012

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Performance improvement of Si-CCD detector based backside reflected light and photon emission microscopy by FIB ultimate substrate thinning

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1632-1636

2011

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Influence of Laser Pulse Duration in Single Event Upset Testing

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1799-1805

2006

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Time Resolved Imaging: From logical states to events, a new and efficient pattern matching method for VLSI analysis

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1640-1645

2011

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Magnetic microscopy for 3D devices: Defect localization with high resolution and long working distance on complex system in package

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1169-1174

2009

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Magnetic microscopy for ground plane current detection: a fast and reliable technique for current leakage localization by means of magnetic simulations

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1700-1705

2010

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Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1366-1369

2008

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CADless laser assisted methodologies for failure analysis and device reliability

Microelectronics and reliability, 2010-11, Vol.50 (9), p.1236-1240

2010

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Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics

Microelectronics and reliability, 2009-09, Vol.49 (9), p.1381-1385

2009

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Dynamic laser stimulation techniques for advanced failure analysis and design debug applications

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1517-1522

2007

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Backside laser testing of ICs for SET sensitivity evaluation

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2193-2201

2001

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Dynamic study of the thermal laser stimulation response on advanced technology structures

Microelectronics and reliability, 2008-10, Vol.48 (10), p.1689-1695

2008

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Magnetic field spatial Fourier analysis: A new opportunity for high resolution current localization

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1684-1688

2011

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Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1630-1633

2007

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Application of various optical techniques for ESD defect localization

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1563-1568

2006

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Fast and rigorous use of thermal time constant to characterize back end of the line test structure in advanced technology

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1279-1284

2008

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Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs

Microelectronics and reliability, 2008, Vol.48 (8), p.1529-1532

2008

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Improvement of signal to noise ratio in electro optical probing technique by wavelets filtering

Backside spectroscopic photon emission microscopy using intensified silicon CCD

Simulation of the thermal stress induced by CW 1340 nm laser on 28 nm advanced technologies

Frequency mapping in dynamic light emission with wavelet transform

Pattern image enhancement by extended depth of field

Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

High performance thermography with InGaAs photon counting camera

A comprehensive study of the application of the EOP techniques on bipolar devices

Optimum Si thickness for backside detection of photon emission using Si-CCD

Performance improvement of Si-CCD detector based backside reflected light and photon emission microscopy by FIB ultimate substrate thinning

Influence of Laser Pulse Duration in Single Event Upset Testing

Time Resolved Imaging: From logical states to events, a new and efficient pattern matching method for VLSI analysis

Magnetic microscopy for 3D devices: Defect localization with high resolution and long working distance on complex system in package

Magnetic microscopy for ground plane current detection: a fast and reliable technique for current leakage localization by means of magnetic simulations

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

CADless laser assisted methodologies for failure analysis and device reliability

Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics

Dynamic laser stimulation techniques for advanced failure analysis and design debug applications

Backside laser testing of ICs for SET sensitivity evaluation

Dynamic study of the thermal laser stimulation response on advanced technology structures

Magnetic field spatial Fourier analysis: A new opportunity for high resolution current localization

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

Application of various optical techniques for ESD defect localization

Fast and rigorous use of thermal time constant to characterize back end of the line test structure in advanced technology

Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs

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