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Physics and applications of GexSi1-x/Si strained-layer heterostructures

IEEE journal of quantum electronics, 1986-09, Vol.22 (9), p.1696-1710

People, R.

1986

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Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures

Applied physics letters, 1985-08, Vol.47 (3), p.322-324

1985

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Simulation and characterization of the selective area growth process

Applied physics letters, 1999-05, Vol.74 (18), p.2617-2619

1999

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Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices

Applied physics letters, 1999-07, Vol.75 (1), p.100-102

1999

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Grey FNN control and robustness design for practical nonlinear systems

Maǧallaẗ al-abḥath al-handasiyyaẗ, 2023-03

2023

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ECOLOGICAL AND HUMAN HEALTH RISKS ASSOCIATED WITH SOIL POLLUTION BY PAHS AND HEAVY METALS IN THE NIGER DELTA

Carpathian Journal of Earth and Environmental Sciences, 2024-02, Vol.19 (1), p.187-200

IHENETU, Stanley Chukwuemeka

2024

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Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input

IEEE journal of selected topics in quantum electronics, 2000-01, Vol.6 (1), p.19-25

2000

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Measurement of the band gap of GexSi1-x/Si strained-layer heterostructures

Applied physics letters, 1985-01, Vol.47 (12), p.1333-1335

1985

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Band alignments for pseudomorphic InP/InxGa1-xAs heterostructures for growth on (001)InP

Journal of applied physics, 1987-09, Vol.62 (6), p.2551-2553

PEOPLE, R

1987

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Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N - n heterojunction by C - V profiling

Applied physics letters, 1983-07, Vol.43 (1), p.118-120

1983

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Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing

Applied physics letters, 1986-09, Vol.49 (13), p.815-817

1986

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Correspondence between coherently strained multilayers and a single coherently strained layer on lattice mismatched substrate

Journal of applied physics, 1986-05, Vol.59 (9), p.3296-3298

PEOPLE, R

1986

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Modulation doping in GexSi1-x/Si strained layer heterostructures

Applied physics letters, 1984, Vol.45 (11), p.1231-1233

1984

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Long-wavelength photoluminescence of InAs1-xSbx(0<x<1) grown by molecular beam epitaxy on (100) InAs

Applied physics letters, 1988-02, Vol.52 (6), p.489-491

1988

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Broad-band tunable electroabsorption modulated laser for WDM application

IEEE journal of selected topics in quantum electronics, 1997-06, Vol.3 (3), p.960-967

1997

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Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1 − x/Si

Thin solid films, 1992-12, Vol.222 (1-2), p.120-125

1992

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Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser

IEEE photonics technology letters, 1997-05, Vol.9 (5), p.563-565

1997

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Effects of coherency strain on the band gap of pseudomorphic InxGa1-xAs on (001) InP

Applied physics letters, 1987-06, Vol.50 (22), p.1604-1606

PEOPLE, R

1987

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Indirect band gap and band alignment for coherently strained SixGe1-x bulk alloys on germanium (001) substrates

Physical review. B, Condensed matter, 1986-08, Vol.34 (4), p.2508-2510

People, R

1986

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Band nonparabolicities in lattice-mismatch-strained bulk semiconductor layers

Physical review. B, Condensed matter, 1990-04, Vol.41 (12), p.8431-8439

1990

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Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission

Applied physics letters, 1988-06, Vol.52 (25), p.2124-2126

1988

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Comment on ‘‘Relaxation of strained-layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 5 1 , 1325 (1987); 5 2 , 852(E) (1988)]

Applied physics letters, 1988-09, Vol.53 (12), p.1127-1127

People, R.

1988

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Indirect, quasidirect, and direct optical transitions in the pseudomorphic (4×4)-monolayer Si-Ge strained-layer superlattice on Si(001)

Physical review. B, Condensed matter, 1987-07, Vol.36 (2), p.1310-1313

1987

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New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu

Applied physics letters, 1987-10, Vol.51 (15), p.1185-1187

1987

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Power loss by two-dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: evidence for weak screening

Applied physics letters, 1986-08, Vol.49 (5), p.283-285

1986

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Physics and applications of GexSi1-x/Si strained-layer heterostructures

Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures

Simulation and characterization of the selective area growth process

Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices

Grey FNN control and robustness design for practical nonlinear systems

ECOLOGICAL AND HUMAN HEALTH RISKS ASSOCIATED WITH SOIL POLLUTION BY PAHS AND HEAVY METALS IN THE NIGER DELTA

Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input

Measurement of the band gap of GexSi1-x/Si strained-layer heterostructures

Band alignments for pseudomorphic InP/InxGa1-xAs heterostructures for growth on (001)InP

Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N - n heterojunction by C - V profiling

Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing

Correspondence between coherently strained multilayers and a single coherently strained layer on lattice mismatched substrate

Modulation doping in GexSi1-x/Si strained layer heterostructures

Long-wavelength photoluminescence of InAs1-xSbx(0<x<1) grown by molecular beam epitaxy on (100) InAs

Broad-band tunable electroabsorption modulated laser for WDM application

Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1 − x/Si

Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser

Effects of coherency strain on the band gap of pseudomorphic InxGa1-xAs on (001) InP

Indirect band gap and band alignment for coherently strained SixGe1-x bulk alloys on germanium (001) substrates

Band nonparabolicities in lattice-mismatch-strained bulk semiconductor layers

Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission

Comment on ‘‘Relaxation of strained-layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 5 1 , 1325 (1987); 5 2 , 852(E) (1988)]

Indirect, quasidirect, and direct optical transitions in the pseudomorphic (4×4)-monolayer Si-Ge strained-layer superlattice on Si(001)

New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu

Power loss by two-dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: evidence for weak screening

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