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Scanning capacitance microscopy for thin film measurements

Nanotechnology, 2006-03, Vol.17 (5), p.1484-1491

2006

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Direct measurement of quantum confinement effects at metal to quantum-well nanocontacts

Physical review letters, 2005-05, Vol.94 (20), p.206803.1-206803.4, Article 206803

2005

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Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

Journal of applied physics, 2018-06, Vol.123 (22)

2018

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Influence of Si deposition on the electromigration induced step bunching instability on Si(1 1 1)

Surface science, 2005-01, Vol.575 (1), p.L51-L56

2005

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Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

Applied physics letters, 2019-02, Vol.114 (5)

2019

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Instrumentation for direct, low frequency scanning capacitance microscopy, and analysis of position dependent stray capacitance

Review of scientific instruments, 2002-10, Vol.73 (10), p.3525-3533

2002

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Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates

Journal of applied physics, 2004-04, Vol.95 (8), p.3952-3960

2004

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Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Applied physics letters, 2012-05, Vol.100 (19), p.193507-193507-4

2012

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Correlation of electrical spin injection and non-linear charge-transport in Fe/MgO/Si

Applied physics letters, 2013-07, Vol.103 (1)

2013

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Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts

Applied physics letters, 2005-10, Vol.87 (18)

2005

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Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy

Microscopy and microanalysis, 2018-08, Vol.24 (S1), p.1056-1057

2018

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High-quality InAsyP1−y step-graded buffer by molecular-beam epitaxy

Applied physics letters, 2003-05, Vol.82 (19), p.3212-3214

2003

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Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity

Physical review. B, Condensed matter, 2001-08, Vol.64 (7), Article 075310

2001

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Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy

Physical review letters, 2001-09, Vol.87 (10), p.106802-106802, Article 106802

2001

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Scanning tunneling microscopy study of oxide nucleation and oxidation-induced roughening at elevated temperatures on the Si(001)-(2 x 1) surface

Physical review letters, 1994-08, Vol.73 (7), p.999-1002

1994

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Anisotropy of mass transport on Si(0 0 1) surfaces heated with direct current

Surface science, 2001-05, Vol.480 (1), p.84-96

2001

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Evidence for diffusion-limited kinetics during electromigration-induced step bunching on Si(1 1 1)

Surface science, 2006-06, Vol.600 (12), p.2417-2424

2006

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Striped Phase and Temperature Dependent Step Shape Transition on Highly B-Doped Si(001)-(2 x 1) Surfaces

Physical review letters, 1996-07, Vol.77 (2), p.330-333

1996

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Enhanced terrace stability for preparation of step-free Si(001)-(2 x 1) surfaces

Physical review letters, 2001-09, Vol.87 (13), p.136103-136103, Article 136103

2001

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Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Evolution of atomic-scale roughening on Si(001)-(2×1) surfaces resulting from high temperature oxidation

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1995-05, Vol.13 (3), p.772-776

1995

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Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC

Materials science forum, 2004-01, Vol.457-460, p.1077-1080

2004

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Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p - i - n diodes studied by ballistic electron emission microscopy

Applied physics letters, 2005-12, Vol.87 (23), p.232103-232103-3

2005

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Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC

Applied physics letters, 2005-05, Vol.86 (22), p.222109-222109-3

2005

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Observation of a scanning tunneling microscopy induced photocurrent during ballistic electron emission microscopy

Applied physics letters, 2003-06, Vol.82 (22), p.3919-3921

2003

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Scanning capacitance microscopy for thin film measurements

Direct measurement of quantum confinement effects at metal to quantum-well nanocontacts

Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

Influence of Si deposition on the electromigration induced step bunching instability on Si(1 1 1)

Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

Instrumentation for direct, low frequency scanning capacitance microscopy, and analysis of position dependent stray capacitance

Comparison of mixed anion, InAsyP1−y and mixed cation, InxAl1−xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Correlation of electrical spin injection and non-linear charge-transport in Fe/MgO/Si

Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts

Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy

High-quality InAsyP1−y step-graded buffer by molecular-beam epitaxy

Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity

Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy

Scanning tunneling microscopy study of oxide nucleation and oxidation-induced roughening at elevated temperatures on the Si(001)-(2 x 1) surface

Anisotropy of mass transport on Si(0 0 1) surfaces heated with direct current

Evidence for diffusion-limited kinetics during electromigration-induced step bunching on Si(1 1 1)

Striped Phase and Temperature Dependent Step Shape Transition on Highly B-Doped Si(001)-(2 x 1) Surfaces

Enhanced terrace stability for preparation of step-free Si(001)-(2 x 1) surfaces

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

Evolution of atomic-scale roughening on Si(001)-(2×1) surfaces resulting from high temperature oxidation

Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC

Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p - i - n diodes studied by ballistic electron emission microscopy

Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC

Observation of a scanning tunneling microscopy induced photocurrent during ballistic electron emission microscopy

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