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CMOS-based cryogenic control of silicon quantum circuits

Nature (London), 2021-05, Vol.593 (7858), p.205-210

2021

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A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons

IEEE journal of solid-state circuits, 2020-11, Vol.55 (11), p.2930-2946

2020

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A Self-Calibrated 2-bit Time-Period Comparator-Based Synthesized Fractional-N MDLL in 22-nm FinFET CMOS

IEEE journal of solid-state circuits, 2021-01, Vol.56 (1), p.43-54

2021

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A 2.4-GHz 20-40-MHz Channel WLAN Digital Outphasing Transmitter Utilizing a Delay-Based Wideband Phase Modulator in 32-nm CMOS

IEEE journal of solid-state circuits, 2012-12, Vol.47 (12), p.3184-3196

2012

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25.5 A Self-Calibrated 1.2-to-3.8GHz 0.0052mm2 Synthesized Fractional-N MDLL Using a 2b Time-Period Comparator in 22nm FinFET CMOS

2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.276-278

2020

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An E -Band Power Amplifier With 26.3% PAE and 24-GHz Bandwidth in 22-nm FinFET CMOS

IEEE journal of solid-state circuits, 2019-05, Vol.54 (5), p.1266-1273

2019

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A 2-to-2.48GHz Voltage-Interpolator-Based Fractional-N Type-I Sampling PLL in 22nm FinFET Assisting Fast Crystal Startup

2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, Vol.65, p.144-146

2022

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13.1 A Fully Integrated Cryo-CMOS SoC for Qubit Control in Quantum Computers Capable of State Manipulation, Readout and High-Speed Gate Pulsing of Spin Qubits in Intel 22nm FFL FinFET Technology

2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, Vol.64, p.208-210

2021

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A mm-Wave Power-Harvesting RFID Tag in 90 nm CMOS

IEEE journal of solid-state circuits, 2010-08, Vol.45 (8), p.1627-1637

2010

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An [Formula Omitted]-Band Power Amplifier With 26.3% PAE and 24-GHz Bandwidth in 22-nm FinFET CMOS

IEEE journal of solid-state circuits, 2019-01, Vol.54 (5), p.1266

2019

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19.1 A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin Qubits/Transmons in 22nm FinFET Technology for Quantum Computers

2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.304-306

2020

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IEEE Radio Frequency Integrated Circuits Symposium

IEEE journal of solid-state circuits, 2018-06, Vol.53 (6), p.1872-1872

2018

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A CMOS Wideband Current-Mode Digital Polar Power Amplifier With Built-In AM-PM Distortion Self-Compensation

IEEE journal of solid-state circuits, 2018-02, Vol.53 (2), p.340-356

2018

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A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm P sat and 26.5% PAE in 16-nm FinFET CMOS

IEEE journal of solid-state circuits, 2021-05, Vol.56 (5), p.1502-1513

2021

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A Compact 75 GHz LNA with 20 dB Gain and 4 dB Noise Figure in 22nm FinFET CMOS Technology

2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2018, p.284-287

2018

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802.11g/n Compliant Fully Integrated Wake-Up Receiver With −72-dBm Sensitivity in 14-nm FinFET CMOS

IEEE journal of solid-state circuits, 2018-05, Vol.53 (5), p.1411-1422

2018

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Designing a DDS-Based SoC for High-Fidelity Multi-Qubit Control

IEEE transactions on circuits and systems. I, Regular papers, 2020-12, Vol.67 (12), p.5380-5393

2020

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A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET

IEEE journal of solid-state circuits, 2022-12, Vol.57 (12), p.3582-3598

2022

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A Compact 75GHz PA with 26.3% PAE and 24GHz Bandwidth in 22nm FinFET CMOS

2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2018, p.224-227

2018

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A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Psat and 26.5% PAE in 16-nm FinFET CMOS

IEEE journal of solid-state circuits, 2021-05, Vol.56 (5), p.1502-1513

2021

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A 128-Gb/s D-Band Receiver With Integrated PLL and ADC Achieving 1.95-pJ/b Efficiency in 22-nm FinFET

IEEE journal of solid-state circuits, 2023-12, Vol.58 (12), p.3364-3379

2023

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A 73GHz PA for 5G phased arrays in 14nm FinFET CMOS

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2017, p.402-405

2017

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A VTC/TDC-Assisted 4× Interleaved 3.8 GS/s 7b 6.0 mW SAR ADC With 13 GHz ERBW

IEEE journal of solid-state circuits, 2023-04, Vol.58 (4), p.972-982

2023

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A Fully Integrated Cryo-CMOS SoC for State Manipulation, Readout, and High-Speed Gate Pulsing of Spin Qubits

IEEE journal of solid-state circuits, 2021-11, Vol.56 (11), p.3289-3306

2021

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Probing single electrons across 300-mm spin qubit wafers

Nature (London), 2024-05, Vol.629 (8010), p.80-85

2024

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CMOS-based cryogenic control of silicon quantum circuits

A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons

A Self-Calibrated 2-bit Time-Period Comparator-Based Synthesized Fractional-N MDLL in 22-nm FinFET CMOS

A 2.4-GHz 20-40-MHz Channel WLAN Digital Outphasing Transmitter Utilizing a Delay-Based Wideband Phase Modulator in 32-nm CMOS

25.5 A Self-Calibrated 1.2-to-3.8GHz 0.0052mm2 Synthesized Fractional-N MDLL Using a 2b Time-Period Comparator in 22nm FinFET CMOS

An E -Band Power Amplifier With 26.3% PAE and 24-GHz Bandwidth in 22-nm FinFET CMOS

A 2-to-2.48GHz Voltage-Interpolator-Based Fractional-N Type-I Sampling PLL in 22nm FinFET Assisting Fast Crystal Startup

13.1 A Fully Integrated Cryo-CMOS SoC for Qubit Control in Quantum Computers Capable of State Manipulation, Readout and High-Speed Gate Pulsing of Spin Qubits in Intel 22nm FFL FinFET Technology

A mm-Wave Power-Harvesting RFID Tag in 90 nm CMOS

An [Formula Omitted]-Band Power Amplifier With 26.3% PAE and 24-GHz Bandwidth in 22-nm FinFET CMOS

19.1 A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin Qubits/Transmons in 22nm FinFET Technology for Quantum Computers

IEEE Radio Frequency Integrated Circuits Symposium

A CMOS Wideband Current-Mode Digital Polar Power Amplifier With Built-In AM-PM Distortion Self-Compensation

A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm P sat and 26.5% PAE in 16-nm FinFET CMOS

A Compact 75 GHz LNA with 20 dB Gain and 4 dB Noise Figure in 22nm FinFET CMOS Technology

802.11g/n Compliant Fully Integrated Wake-Up Receiver With −72-dBm Sensitivity in 14-nm FinFET CMOS

Designing a DDS-Based SoC for High-Fidelity Multi-Qubit Control

A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET

A Compact 75GHz PA with 26.3% PAE and 24GHz Bandwidth in 22nm FinFET CMOS

A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Psat and 26.5% PAE in 16-nm FinFET CMOS

A 128-Gb/s D-Band Receiver With Integrated PLL and ADC Achieving 1.95-pJ/b Efficiency in 22-nm FinFET

A 73GHz PA for 5G phased arrays in 14nm FinFET CMOS

A VTC/TDC-Assisted 4× Interleaved 3.8 GS/s 7b 6.0 mW SAR ADC With 13 GHz ERBW

A Fully Integrated Cryo-CMOS SoC for State Manipulation, Readout, and High-Speed Gate Pulsing of Spin Qubits

Probing single electrons across 300-mm spin qubit wafers

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