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Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching

IEEE photonics technology letters, 2010-09, Vol.22 (17), p.1318-1320

2010

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Use of Elastic Conductive Adhesive as the Bonding Agent for the Fabrication of Vertical Structure GaN-Based LEDs on Flexible Metal Substrate

IEEE photonics technology letters, 2008-04, Vol.20 (7), p.523-525

2008

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Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer

Applied physics letters, 2011-09, Vol.99 (13)

2011

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A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes

Applied physics letters, 2008-01, Vol.92 (2)

2008

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A Screen-Printed Sn-Based Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DG10-04DG10-3

2010

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Enhanced Performance of Vertical GaN-Based LEDs With Highly Reflective P -ohmic Contact and Periodic Indium-Zinc-Oxide Nano-Wells

IEEE photonics technology letters, 2010-03, Vol.22 (5), p.338-340

2010

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Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium–Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate

Applied physics express, 2011-01, Vol.4 (1), p.12101

2011

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Enhanced Performance of GaN-Based Vertical Light-Emitting Diodes with Circular Protrusions Surmounted by Hexagonal Cones and Indium–Zinc Oxide Current Spreading Layer

Applied physics express, 2011-07, Vol.4 (7), p.72104

2011

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Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diode with Surface Roughening Using KrF Laser and ZnO Nanorods

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DG12-04DG12-4

2010

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Preparation of SiO2 Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DN10-04DN10-4

2010

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Ultraviolet laser-induced fluorescence of the C2H radical

Chemical physics letters, 1992-03, Vol.190 (5), p.507-513

1992

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Investigation on symmetry and characteristic properties of the fragmenting source in heavy-ion reactions through reconstructed primary isotope yields

Nuclear science and techniques, 2016-12, Vol.27 (6), p.8-12, Article 131

2016

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Improved light output of GaN-based vertical light emitting diodes using SiO 2 nanotube arrays and transparent metal oxide current conduction layer

Applied physics letters, 2011-09, Vol.99 (13), p.131111-131111-3

2011

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Ultra high voltage alternating-current series capacitor by-pass switches test circuit

2011 1st International Conference on Electric Power Equipment - Switching Technology, 2011, p.22-26

2011

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Investigation on symmetry and characteristic properties of the fragmenting source in heavy-ion reactions through reconstructed primary isotope yields

核技术：英文版, 2016 (6)

Fang-Fang Duan Xing-Quan Liu Wei-Ping Lin Ryoichi Wada Jian-Song Wang Mei-Rong Huang Pei-Pei Ren Yan-Yun Yang Peng Ma Jun-Bing Ma Shi-Lun Jin Zhen Bai Qi Wang

2016

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Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DG06-04DG06-4

2011

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Enhanced Performance of Vertical GaN-Based LEDs With Highly Reflective P -ohmic Contact and Periodic IndiumaZincaOxide Nano-Wells

IEEE photonics technology letters, 2010-03, Vol.22 (5), p.338-340

2010

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Enhanced Performance of Vertical GaN-Based LEDs With Highly Reflective [Formula Omitted]-ohmic Contact and Periodic Indium-Zinc-Oxide Nano-Wells

IEEE photonics technology letters, 2010-03, Vol.22 (5), p.338

2010

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A Sn-based metal substrate technology for the fabricationof vertical-structured GaN-based light-emitting diodes

Applied physics letters, 2008-01, Vol.92 (2), p.021105-021105-3

2008

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Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO 2 /SiO 2 Reflector and Roughened GaO x Surface Film

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO 2 /SiO 2 Reflector and Roughened GaO x Surface Film

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Object tracking with a ptz controlled camera

Pei, Ren Wang

2012

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Preparation of SiO 2 Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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Research and development of purchase sale and stock management system

Wang, Pei Ren

2011

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Corrections to "Use of Elastic Conductive Adhesive as the Bonding Agent for the Fabrication of Vertical Structure GaN-Based LEDs on Flexible Metal Substrate" [1 Apr 08 523-525]

IEEE photonics technology letters, 2008-06, Vol.20 (12), p.1072-1072

2008

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Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching

Use of Elastic Conductive Adhesive as the Bonding Agent for the Fabrication of Vertical Structure GaN-Based LEDs on Flexible Metal Substrate

Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer

A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes

A Screen-Printed Sn-Based Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes

Enhanced Performance of Vertical GaN-Based LEDs With Highly Reflective P -ohmic Contact and Periodic Indium-Zinc-Oxide Nano-Wells

Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium–Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate

Enhanced Performance of GaN-Based Vertical Light-Emitting Diodes with Circular Protrusions Surmounted by Hexagonal Cones and Indium–Zinc Oxide Current Spreading Layer

Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diode with Surface Roughening Using KrF Laser and ZnO Nanorods

Preparation of SiO2 Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates

Ultraviolet laser-induced fluorescence of the C2H radical

Investigation on symmetry and characteristic properties of the fragmenting source in heavy-ion reactions through reconstructed primary isotope yields

Improved light output of GaN-based vertical light emitting diodes using SiO 2 nanotube arrays and transparent metal oxide current conduction layer

Ultra high voltage alternating-current series capacitor by-pass switches test circuit

Investigation on symmetry and characteristic properties of the fragmenting source in heavy-ion reactions through reconstructed primary isotope yields

Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film

Enhanced Performance of Vertical GaN-Based LEDs With Highly Reflective P -ohmic Contact and Periodic IndiumaZincaOxide Nano-Wells

Enhanced Performance of Vertical GaN-Based LEDs With Highly Reflective [Formula Omitted]-ohmic Contact and Periodic Indium-Zinc-Oxide Nano-Wells

A Sn-based metal substrate technology for the fabricationof vertical-structured GaN-based light-emitting diodes

Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO 2 /SiO 2 Reflector and Roughened GaO x Surface Film

Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO 2 /SiO 2 Reflector and Roughened GaO x Surface Film

Object tracking with a ptz controlled camera

Preparation of SiO 2 Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates

Research and development of purchase sale and stock management system

Corrections to "Use of Elastic Conductive Adhesive as the Bonding Agent for the Fabrication of Vertical Structure GaN-Based LEDs on Flexible Metal Substrate" [1 Apr 08 523-525]

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