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Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Journal of applied physics, 2004-11, Vol.96 (9), p.4689-4728

2004

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Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Electronic and dynamical properties of the silicon trivacancy

Physical review. B, Condensed matter and materials physics, 2012-11, Vol.86 (17), Article 174101

2012

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Exceptional gettering response of epitaxially grown kerfless silicon

Journal of applied physics, 2016-02, Vol.119 (6)

2016

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Local vibrational modes of interstitial boron-interstitial oxygen complex in silicon

Physica status solidi. A, Applications and materials science, 2016-11, Vol.213 (11), p.2850-2854

2016

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Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

Applied physics letters, 2003-09, Vol.83 (9), p.1881-1883

2003

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Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect

IEEE transactions on electron devices, 2008-07, Vol.55 (7), p.1647-1656

2008

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Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN

Applied physics letters, 2023-11, Vol.123 (22)

2023

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Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Journal of applied physics, 2016-11, Vol.120 (19)

2016

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Laplace deep level transient spectroscopy: Embodiment and evolution

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.3026-3030

2012

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The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Journal of applied physics, 2024-05, Vol.135 (17)

2024

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Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

Journal of applied physics, 2024-07, Vol.136 (4)

2024

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FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN

Applied physics letters, 2024-06, Vol.124 (23)

2024

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Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy

Journal of applied physics, 2022-08, Vol.132 (6)

2022

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Graphene oxide films for field effect surface passivation of silicon for solar cells

Solar energy materials and solar cells, 2018-12, Vol.187, p.189-193

2018

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Coexistence of deep levels with optically active InAs quantum dots

Physical review. B, Condensed matter and materials physics, 2005-10, Vol.72 (16), p.165302.1-165302.7, Article 165302

2005

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Defect reactions associated with divacancy elimination in silicon

Journal of physics. Condensed matter, 2003-10, Vol.15 (39), p.S2779-S2789

2003

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Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques

Journal of applied physics, 2018-12, Vol.124 (22)

2018

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Passivation of thermally-induced defects with hydrogen in float-zone silicon

Journal of physics. D, Applied physics, 2021-07, Vol.54 (27), p.275105

2021

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Electronic properties of antimony-vacancy complex in Ge crystals

Journal of applied physics, 2004-04, Vol.95 (8), p.4078-4083

2004

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Implantation defects and n-type doping in Ge and Ge rich SiGe

Thin solid films, 2008-11, Vol.517 (1), p.152-154

2008

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Reconfigurations and diffusion of trivacancy in silicon

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2974-2977

2012

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The vacancy–donor pair in unstrained silicon, germanium and SiGe alloys

Journal of physics. Condensed matter, 2005-06, Vol.17 (22), p.S2293-S2302

2005

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Donor levels of the divacancy-oxygen defect in silicon

Journal of applied physics, 2014-01, Vol.115 (1)

2014

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Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Electronic and dynamical properties of the silicon trivacancy

Exceptional gettering response of epitaxially grown kerfless silicon

Local vibrational modes of interstitial boron-interstitial oxygen complex in silicon

Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect

Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Laplace deep level transient spectroscopy: Embodiment and evolution

The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN

Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy

Graphene oxide films for field effect surface passivation of silicon for solar cells

Coexistence of deep levels with optically active InAs quantum dots

Defect reactions associated with divacancy elimination in silicon

Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques

Passivation of thermally-induced defects with hydrogen in float-zone silicon

Electronic properties of antimony-vacancy complex in Ge crystals

Implantation defects and n-type doping in Ge and Ge rich SiGe

Reconfigurations and diffusion of trivacancy in silicon

The vacancy–donor pair in unstrained silicon, germanium and SiGe alloys

Donor levels of the divacancy-oxygen defect in silicon

Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms

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