UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Asynchronous pulse-modulated plasma effect on the generation of abnormal high-energetic electrons for the suppression of charge-up induced tilting and cell density-dependent etching profile variation

Physics of plasmas, 2023-01, Vol.30 (1)

2023

Volltextzugriff (PDF)

Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features

Physics of plasmas, 2022-09, Vol.29 (9)

2022

Volltextzugriff (PDF)

Recovery of indium from In2O3 and liquid crystal display powder via a chloride volatilization process using polyvinyl chloride

Thermochimica acta, 2009-09, Vol.493 (1-2), p.105-108

2009

Volltextzugriff (PDF)

Influence of Intercell Trapped Charge on Vertical NAND Flash Memory

IEEE electron device letters, 2017-02, Vol.38 (2), p.164-167

2017

Volltextzugriff (PDF)

Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1041-1046

2016

Volltextzugriff (PDF)

Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory

IEEE electron device letters, 2015-12, Vol.36 (12), p.1318-1320

2015

Volltextzugriff (PDF)

Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3521-3526

2016

Volltextzugriff (PDF)

Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2078-2084

2012

Volltextzugriff (PDF)

Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor

IEEE electron device letters, 2016-11, Vol.37 (11), p.1418-1421

2016

Volltextzugriff (PDF)

Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.67-73

2011

Volltextzugriff (PDF)

3-D Vertical FG nand Flash Memory With a Novel Electrical S/D Technique Using the Extended Sidewall Control Gate

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2966-2973

2011

Volltextzugriff (PDF)

Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T182-T183

2015

Volltextzugriff (PDF)

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3568-3573

2012

Volltextzugriff (PDF)

Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings

IEEE electron device letters, 2010-07, Vol.31 (7), p.635-637

2010

Volltextzugriff (PDF)

Universal surface reaction model of plasma oxide etching

Journal of physics. D, Applied physics, 2020-09, Vol.53 (38), p.385207

2020

Volltextzugriff (PDF)

Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04ED12-5

2014

Volltextzugriff (PDF)

New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory

IEEE electron device letters, 2012-08, Vol.33 (8), p.1198-1200

2012

Volltextzugriff (PDF)

Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide Spacer

IEEE electron device letters, 2009-02, Vol.30 (2), p.181-184

2009

Volltextzugriff (PDF)

Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.554-560

2005

Volltextzugriff (PDF)

Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Current Applied Physics, 2011, 11(3), , pp.280-285

2011

Volltextzugriff (PDF)

Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- \text} Method

IEEE electron device letters, 2015-06, Vol.36 (6), p.561-563

2015

Volltextzugriff (PDF)

Efficient dehalogenation of automobile shredder residue in NaOH/ethylene glycol using a ball mill

Chemosphere (Oxford), 2009, Vol.74 (2), p.287-292

2009

Volltextzugriff (PDF)

Removal of hydrogen chloride from gaseous streams using magnesium–aluminum oxide

Chemosphere (Oxford), 2008-10, Vol.73 (5), p.844-847

2008

Volltextzugriff (PDF)

Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications

Solid-state electronics, 2014-04, Vol.94, p.51-55

2014

Volltextzugriff (PDF)

Reliability issue of 20 nm MLC NAND Flash

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.3B.2.1-3B.2.4

2013

Volltextzugriff (PDF)

1 – 25 von 105

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(67)
Mit Volltextzugriff
(85)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(57)
Technology
(37)
Physical Sciences
(36)
Physics
(32)
Engineering
(28)
Logic Gates
(28)
Physics, Applied
(26)
Flash Memory
(25)
Engineering, Electrical & Electronic
(24)
Applied Sciences
(16)
Exact Sciences And Technology
(16)
Interference
(16)
Transistors
(13)
Electronics
(12)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(12)
Flash Memories
(11)
Design. Technologies. Operation Analysis. Testing
(10)
Devices
(10)
Gates
(10)
Integrated Circuits
(10)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Asynchronous pulse-modulated plasma effect on the generation of abnormal high-energetic electrons for the suppression of charge-up induced tilting and cell density-dependent etching profile variation

Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features

Recovery of indium from In2O3 and liquid crystal display powder via a chloride volatilization process using polyvinyl chloride

Influence of Intercell Trapped Charge on Vertical NAND Flash Memory

Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation

Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory

Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory

Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor

Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

3-D Vertical FG nand Flash Memory With a Novel Electrical S/D Technique Using the Extended Sidewall Control Gate

Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings

Universal surface reaction model of plasma oxide etching

Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory

Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide Spacer

Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- \text} Method

Efficient dehalogenation of automobile shredder residue in NaOH/ethylene glycol using a ball mill

Removal of hydrogen chloride from gaseous streams using magnesium–aluminum oxide

Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications

Reliability issue of 20 nm MLC NAND Flash

Suchergebnisse filtern