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Dual-polarization, single quantum-well AlGaInP laser diode structure

IEEE journal of quantum electronics, 1994-12, Vol.30 (12), p.2738-2742

1994

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Low threshold planar buried heterostructure lasers fabricated by impurity-induced disordering

Applied physics letters, 1985-12, Vol.47 (12), p.1239-1241

1985

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Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering

Applied physics letters, 1988-04, Vol.52 (17), p.1371-1373

1988

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High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows

Applied physics letters, 1986-12, Vol.49 (23), p.1572-1574

1986

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Laser induced disordering of GaAs-AlGaAs superlattice and incorporation of Si impurity

Applied physics letters, 1986-11, Vol.49 (21), p.1447-1449

1986

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Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser

Applied physics letters, 1992-04, Vol.60 (16), p.1927-1929

1992

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Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering

Applied physics letters, 1986-01, Vol.48 (1), p.7-9

1986

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AlGaAs multiple-wavelength light-emitting bar grown by laser-assisted metalorganic chemical vapor deposition

Applied physics letters, 1988-05, Vol.52 (18), p.1499-1501

1988

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Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering

Applied physics letters, 1984-04, Vol.44 (7), p.700-702

1984

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High power cw operation of phased array diode lasers with diffraction limited output beam

Applied physics letters, 1985-12, Vol.47 (11), p.1134-1136

1985

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Low threshold buried heterostructure quantum well diode lasers by laser-assisted disordering

Applied physics letters, 1987-06, Vol.50 (23), p.1637-1639

1987

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Diffraction effects in a diode array traveling-wave amplifier

Applied physics letters, 1987-11, Vol.51 (21), p.1676-1678

1987

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Accelerated aging of 100-mW cw multiple-stripe GaAlAs lasers grown by metalorganic chemical vapor deposition

Applied physics letters, 1985-01, Vol.46 (2), p.118-120

1985

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Phase-locked (GaAl)As laser emitting 1.5 W cw per mirror

Applied physics letters, 1983-04, Vol.42 (8), p.645-647

1983

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Wavelength modification (△ħω=10-40 me V) of room temperature continuous quantum-well heterostructure laser diodes by thermal annealing

Journal of applied physics, 1983-12, Vol.54 (12), p.7190-7191

1983

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Individual spatial modes of a phase-locked injection laser array observed through spectral selection and selected with an external mirror

Journal of applied physics, 1985-10, Vol.58 (7), p.2777-2779

1985

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Low threshold GaxIn1-xP/(AlyGa1-y)0.5In0.5P strained quantum well lasers

Journal of crystal growth, 1992-11, Vol.124 (1-4), p.751-756

1992

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Low-threshold disorder-defined buried-heterostructure AlGaAs diode lasers by anisotropic diffusion of laser-incorporated Si

Applied physics letters, 1987-09, Vol.51 (10), p.731-733

1987

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Observation of supermodes in a phase-locked diode laser array

Applied physics letters, 1984-08, Vol.45 (3), p.217-219

1984

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Low-threshold gain-guided coupled-stripe quantum well diode lasers by laser-assisted processing

Applied physics letters, 1987-08, Vol.51 (8), p.558-560

1987

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Study of Intensity Pulsations in Proton-Bombarded Stripe-Geometry Double-Heterostructure AlxGa1--xAs Lasers

Journal of applied physics, 1979-07, Vol.50 (7), p.4620-4637

1979

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Far-field supermode patterns of a multiple-stripe quantum well heterostructure laser operated (∼7330 Å, 300 K) in an external grating cavity

Applied physics letters, 1984-08, Vol.45 (4), p.406-408

1984

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Multiple-wavelength diode laser superarray

IEEE journal of quantum electronics, 1990-04, Vol.26 (4), p.663-668

1990

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Monolithic waveguide coupled cavity lasers and modulators fabricated by impurity induced disordering

Journal of lightwave technology, 1988-06, Vol.6 (6), p.786-792

1988

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Supermodes of multiple-stripe quantum-well heterostructure laser diodes operated (cw, 300 K) in an external-grating cavity

Journal of applied physics, 1985-01, Vol.57 (5), p.1489-1494

1985

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Dual-polarization, single quantum-well AlGaInP laser diode structure

Low threshold planar buried heterostructure lasers fabricated by impurity-induced disordering

Very low threshold buried heterostructure quantum well lasers by laser-assisted disordering

High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows

Laser induced disordering of GaAs-AlGaAs superlattice and incorporation of Si impurity

Low threshold, 633 nm, single tensile-strained quantum well Ga0.6In0.4P/(Al x Ga1− x )0.5In0.5P laser

Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering

AlGaAs multiple-wavelength light-emitting bar grown by laser-assisted metalorganic chemical vapor deposition

Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering

High power cw operation of phased array diode lasers with diffraction limited output beam

Low threshold buried heterostructure quantum well diode lasers by laser-assisted disordering

Diffraction effects in a diode array traveling-wave amplifier

Accelerated aging of 100-mW cw multiple-stripe GaAlAs lasers grown by metalorganic chemical vapor deposition

Phase-locked (GaAl)As laser emitting 1.5 W cw per mirror

Wavelength modification (△ħω=10-40 me V) of room temperature continuous quantum-well heterostructure laser diodes by thermal annealing

Individual spatial modes of a phase-locked injection laser array observed through spectral selection and selected with an external mirror

Low threshold GaxIn1-xP/(AlyGa1-y)0.5In0.5P strained quantum well lasers

Low-threshold disorder-defined buried-heterostructure AlGaAs diode lasers by anisotropic diffusion of laser-incorporated Si

Observation of supermodes in a phase-locked diode laser array

Low-threshold gain-guided coupled-stripe quantum well diode lasers by laser-assisted processing

Study of Intensity Pulsations in Proton-Bombarded Stripe-Geometry Double-Heterostructure AlxGa1--xAs Lasers

Far-field supermode patterns of a multiple-stripe quantum well heterostructure laser operated (∼7330 Å, 300 K) in an external grating cavity

Multiple-wavelength diode laser superarray

Monolithic waveguide coupled cavity lasers and modulators fabricated by impurity induced disordering

Supermodes of multiple-stripe quantum-well heterostructure laser diodes operated (cw, 300 K) in an external-grating cavity

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