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Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2793-2801

2014

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Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations

Applied physics letters, 2008-02, Vol.92 (6), p.062114-062114-3

2008

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Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

Japanese Journal of Applied Physics, 2012-05, Vol.51 (5), p.054102-054102-5

2012

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Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz

IEICE transactions on electronics, 2010, Vol.E93-C (8), p.1238-1244

2010

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Numerical simulations of space charge waves in InP films and microwave frequency conversion under negative differential conductivity

Applied physics letters, 2011-02, Vol.98 (7), p.072110-072110-3

2011

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Physics-Based Modeling of GaN HEMTs

IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.685-693

2012

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Power Output Improvement of Silicon-Germanium Thermoelectric Generators

ECS transactions, 2006-10, Vol.3 (7), p.1151-1162

2006

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Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

IEEE electron device letters, 2013-03, Vol.34 (3), p.432-434

2013

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Electron mobility model for strained-Si devices

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.527-533

2005

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A Promising New n ++ -GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

ECS transactions, 2013, Vol.50 (3), p.291-296

2013

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Critical modeling issues of SiGe semiconductor devices

Journal of Telecommunications and Information Technology, 2004-03 (1), p.15-25

2004

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Numerical simulation of amplification of space charge waves in n-InP films

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-10, Vol.176 (17), p.1368-1372

2011

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Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation

ECS transactions, 2013, Vol.50 (3), p.223-228

2013

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Nonstationary effects of the space charge in semiconductor structures

Journal of applied physics, 2009-04, Vol.105 (7), p.074501-074501-6

2009

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Rigorous modeling of high-speed semiconductor devices

Microelectronics and reliability, 2004-06, Vol.44 (6), p.889-897

2004

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Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

Japanese Journal of Applied Physics, 2012-05, Vol.51 (5R), p.54102

2012

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Ultrafast Wigner transport in quantum wires

Journal of computational electronics, 2007-09, Vol.6 (1-3), p.235-238

2007

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Field-Plate Optimization of AlGaN/GaN HEMTs

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, p.107-110

2006

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Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (30), p.2543-2543

2012

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A Promising New n ++ -GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

Meeting abstracts (Electrochemical Society), 2012-06, Vol.MA2012-02 (30), p.2551-2551

2012

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A methodology for deep sub-0.25 μm CMOS technology prediction

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2331-2336

2001

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Nonlinear electronic transport and device performance of HEMTs

IEEE transactions on electron devices, 2001-02, Vol.48 (2), p.210-217

2001

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Effects of Stress-Induced Bandgap Narrowing on Reverse-Bias Junction Behavior

32nd European Solid-State Device Research Conference, 2002, p.631-634

2002

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Normally-off InAlN/GaN HEMTs with n++ GaN cap layer: A simulation study

2011 International Semiconductor Device Research Symposium (ISDRS), 2011, p.1-2

2011

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Amplification of space charge waves in n-InP films

2010 7th International Conference on Electrical Engineering Computing Science and Automatic Control, 2010, p.613-616

2010

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Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations

Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz

Numerical simulations of space charge waves in InP films and microwave frequency conversion under negative differential conductivity

Physics-Based Modeling of GaN HEMTs

Power Output Improvement of Silicon-Germanium Thermoelectric Generators

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

Electron mobility model for strained-Si devices

A Promising New n ++ -GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

Critical modeling issues of SiGe semiconductor devices

Numerical simulation of amplification of space charge waves in n-InP films

Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation

Nonstationary effects of the space charge in semiconductor structures

Rigorous modeling of high-speed semiconductor devices

Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

Ultrafast Wigner transport in quantum wires

Field-Plate Optimization of AlGaN/GaN HEMTs

Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation

A Promising New n ++ -GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

A methodology for deep sub-0.25 μm CMOS technology prediction

Nonlinear electronic transport and device performance of HEMTs

Effects of Stress-Induced Bandgap Narrowing on Reverse-Bias Junction Behavior

Normally-off InAlN/GaN HEMTs with n++ GaN cap layer: A simulation study

Amplification of space charge waves in n-InP films

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