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Exciton radiative lifetime in transition metal dichalcogenide monolayers

Physical review. B, 2016-05, Vol.93 (20), Article 205423

2016

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Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers

Physical review letters, 2016-10, Vol.117 (18), p.187401-187401, Article 187401

2016

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Enabling valley selective exciton scattering in monolayer WSe2 through upconversion

Nature communications, 2017-04, Vol.8 (1), p.14927-14927, Article 14927

2017

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Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based van der Waals Heterostructures

Physical review. X, 2017-05, Vol.7 (2)

2017

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Enabling valley selective exciton scattering in monolayer WSe 2 through upconversion

Nature communications, 2017-04, Vol.8, p.14927

2017

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Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN

Applied physics letters, 2018-07, Vol.113 (3)

2018

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Gate control of the electron spin-diffusion length in semiconductor quantum wells

Nature communications, 2013-09, Vol.4 (1), p.2372-2372, Article 2372

2013

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Exciton States in Monolayer MoSe2 and MoTe2 Probed by Upconversion Spectroscopy

Physical review. X, 2018-09, Vol.8 (3)

2018

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Charged excitons in monolayer WSe2: Experiment and theory

Physical review. B, 2017-08, Vol.96 (8)

2017

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Full electrical control of the electron spin relaxation in GaAs quantum wells

Physical review letters, 2011-09, Vol.107 (13), p.136604-136604, Article 136604

2011

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Optical Detection of Long Electron Spin Transport Lengths in a Monolayer Semiconductor

Physical review letters, 2022-07, Vol.129 (2), p.027402-027402, Article 027402

2022

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Robust quantum dot exciton generation via adiabatic passage with frequency-swept optical pulses

Physical review letters, 2011-04, Vol.106 (16), p.166801-166801, Article 166801

2011

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Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector

Physical review. B, Condensed matter and materials physics, 2014-08, Vol.90 (8), p.505-505, Article 085310

2014

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Direct observation of the electron spin relaxation induced by nuclei in quantum dots

Physical review letters, 2005-03, Vol.94 (11), p.116601-116601, Article 116601

2005

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Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures

Applied physics letters, 2021-12, Vol.119 (26)

2021

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Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

Applied physics letters, 2016-04, Vol.108 (15)

2016

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Spin relaxation quenching in semiconductor quantum dots

Physical review letters, 2001-02, Vol.86 (8), p.1634-1637

2001

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Spin and recombination dynamics of excitons and free electrons in p-type GaAs: Effect of carrier density

Applied physics letters, 2017-02, Vol.110 (8)

2017

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Electric field dependence of the spin relaxation anisotropy in (111) GaAs AlGaAs quantum wells

New journal of physics, 2013-09, Vol.15 (9), p.95016-14

2013

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Probing carrier dynamics in nanostructures by picosecond cathodoluminescence

Nature, 2005-11, Vol.438 (7067), p.479-482

2005

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Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

Applied physics letters, 2018-04, Vol.112 (14)

2018

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Charge transfer and magnetization of a MoS2 monolayer at the Co(0001)/MoS2 interface

Journal of physics. Conference series, 2017, Vol.903 (1)

2017

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Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells

Applied physics letters, 2012-07, Vol.101 (3)

2012

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Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

Applied physics letters, 2016-02, Vol.108 (8)

2016

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Exciton radiative lifetime in transition metal dichalcogenide monolayers

Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers

Enabling valley selective exciton scattering in monolayer WSe2 through upconversion

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2-Based van der Waals Heterostructures

Enabling valley selective exciton scattering in monolayer WSe 2 through upconversion

Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN

Gate control of the electron spin-diffusion length in semiconductor quantum wells

Exciton States in Monolayer MoSe2 and MoTe2 Probed by Upconversion Spectroscopy

Charged excitons in monolayer WSe2: Experiment and theory

Full electrical control of the electron spin relaxation in GaAs quantum wells

Optical Detection of Long Electron Spin Transport Lengths in a Monolayer Semiconductor

Robust quantum dot exciton generation via adiabatic passage with frequency-swept optical pulses

Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector

Direct observation of the electron spin relaxation induced by nuclei in quantum dots

Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

Spin relaxation quenching in semiconductor quantum dots

Spin and recombination dynamics of excitons and free electrons in p-type GaAs: Effect of carrier density

Electric field dependence of the spin relaxation anisotropy in (111) GaAs AlGaAs quantum wells

Probing carrier dynamics in nanostructures by picosecond cathodoluminescence

Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

Charge transfer and magnetization of a MoS2 monolayer at the Co(0001)/MoS2 interface

Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

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