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Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

Physical review letters, 2006-12, Vol.97 (23), p.237601-237601, Article 237601

2006

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Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

Physical review. B, Condensed matter and materials physics, 2009-05, Vol.79 (20), Article 205205

2009

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Valence-band structure of InN from x-ray photoemission spectroscopy

Physical review. B, Condensed matter and materials physics, 2005-12, Vol.72 (24), Article 245319

2005

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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Applied physics letters, 2005-10, Vol.87 (18), p.182114-182114-3

2005

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Bandgap and effective mass of epitaxial cadmium oxide

Applied physics letters, 2008-01, Vol.92 (2), p.022101-022101-3

2008

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Surface electronic properties of n- and p-type InGaN alloys

Physica Status Solidi (b), 2008-05, Vol.245 (5), p.881-883

2008

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Band gap reduction in GaNSb alloys due to the anion mismatch

Applied physics letters, 2005-09, Vol.87 (13), p.132101-132101-3

2005

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Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

Physical review. B, Condensed matter and materials physics, 2008-01, Vol.77 (4), Article 045316

2008

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Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

Applied physics letters, 2007-03, Vol.90 (13)

2007

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Transition from electron accumulation to depletion at InGaN surfaces

Applied physics letters, 2006-11, Vol.89 (20), p.202110-202110-3

2006

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Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb

Journal of crystal growth, 2007-06, Vol.304 (2), p.338-341

2007

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Band anticrossing in GaNxSb1−x

Applied physics letters, 2006-09, Vol.89 (11)

2006

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X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

Applied physics letters, 2007-09, Vol.91 (11), p.112103-112103-3

2007

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Ab-Initio Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO

Journal of the Korean Physical Society, 2008, 53(5), , pp.2811-2815

2008

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Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

Physical review. B, Condensed matter and materials physics, 2009-01, Vol.79 (3), Article 035203

2009

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Growth and characterisation of high quality MBE grown InNx Sb1-x

Physica status solidi. PSS-RRL. Rapid research letters, 2007-05, Vol.1 (3), p.104-106

2007

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In adlayers on c -plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy

Physical review. B, Condensed matter and materials physics, 2007-08, Vol.76 (7), Article 075313

2007

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X-ray photoemission studies of the electronic structure of single-crystalline CdO(100)

Superlattices and microstructures, 2007-07, Vol.42 (1), p.197-200

2007

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Response to "Comment on 'Bandgap and effective mass determinationof epitaxial cadmium oxide'" [ Appl. Phys. Lett. 92 , 106103 ( 2008 ) ]

Applied physics letters, 2008-03, Vol.92 (10), p.106104-106104-1

2008

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Response to “Comment on ‘Bandgap and effective mass determination of epitaxial cadmium oxide’” [Appl. Phys. Lett. 92, 106103 (2008)]

Applied physics letters, 2008-03, Vol.92 (10)

2008

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Valence band offset of In N ∕ Al N heterojunctions measured by x-ray photoelectron spectroscopy

Applied physics letters, 2007-03, Vol.90 (13), p.132105-132105-3

2007

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Band anticrossing in Ga N x Sb 1 − x

Applied physics letters, 2006-09, Vol.89 (11), p.111921-111921-3

2006

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Growth and characterisation of high quality MBE grown InN x Sb 1– x

Physica status solidi. PSS-RRL. Rapid research letters, 2007-05, Vol.1 (3), p.104-106

2007

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Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications

Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference (Springer Proceedings in Physics Series Volume 119), 2008, Vol.119, p.49-52

2008

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Variation of band bending at the surface of Mg-doped InGaN: Evidence of p -type conductivity across the composition range

Physical review. B, Condensed matter and materials physics, 2007-03, Vol.75 (11), Article 115312

2007

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Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

Valence-band structure of InN from x-ray photoemission spectroscopy

Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Bandgap and effective mass of epitaxial cadmium oxide

Surface electronic properties of n- and p-type InGaN alloys

Band gap reduction in GaNSb alloys due to the anion mismatch

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

Transition from electron accumulation to depletion at InGaN surfaces

Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb

Band anticrossing in GaNxSb1−x

X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

Ab-Initio Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO

Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

Growth and characterisation of high quality MBE grown InNx Sb1-x

In adlayers on c -plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy

X-ray photoemission studies of the electronic structure of single-crystalline CdO(100)

Response to "Comment on 'Bandgap and effective mass determinationof epitaxial cadmium oxide'" [ Appl. Phys. Lett. 92 , 106103 ( 2008 ) ]

Response to “Comment on ‘Bandgap and effective mass determination of epitaxial cadmium oxide’” [Appl. Phys. Lett. 92, 106103 (2008)]

Valence band offset of In N ∕ Al N heterojunctions measured by x-ray photoelectron spectroscopy

Band anticrossing in Ga N x Sb 1 − x

Growth and characterisation of high quality MBE grown InN x Sb 1– x

Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications

Variation of band bending at the surface of Mg-doped InGaN: Evidence of p -type conductivity across the composition range

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