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Commissioning and simulation of CHROMIE, a high-rate test beam telescope

Journal of instrumentation, 2020-02, Vol.15 (2), p.C02003-C02003

Asenov, P.

2020

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Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2−x-based memory devices through experiments and simulations

Journal of applied physics, 2017-03, Vol.121 (9)

2017

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A Worst-Case Analysis of Trap-Assisted Tunneling Leakage in DRAM Using a Machine Learning Approach

IEEE electron device letters, 2021-02, Vol.42 (2), p.156-159

2021

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Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties

Journal of applied physics, 2016-10, Vol.120 (15)

2016

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End-to-end simulation of particle physics events with flow matching and generator oversampling

Machine learning: science and technology, 2024-09, Vol.5 (3), p.35007

2024

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A Two-Prong Approach to the Simulation of DC-RSD: TCAD and SPICE

IEEE transactions on nuclear science, 2024-02, Vol.71 (2), p.127-134

2024

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Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations

Journal of instrumentation, 2020-11, Vol.15 (11), p.P11034-P11034

2020

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TCAD optimization of LGAD sensors for extremely high fluence applications

Journal of instrumentation, 2023-01, Vol.18 (1), p.C01008

2023

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Study of p-type silicon MOS capacitors at HL-LHC radiation levels through irradiation with a cobalt-60 gamma source and a TCAD simulation

Journal of instrumentation, 2021-06, Vol.16 (6), p.P06040

2021

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TCAD simulations of non-irradiated and irradiated low-gain avalanche diodes and comparison with measurements

Journal of instrumentation, 2022-01, Vol.17 (1), p.C01022

2022

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Multiparty Call Control at the Network Edge

Elektronika ir elektrotechnika, 2020-10, Vol.26 (5), p.39-49

2020

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Can We Ever Get to a 100 nm Tall Library? Power Rail Design for 1nm Technology Node

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

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Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015, p.2449-2452

2015

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Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.3A.2.1-3A.2.5

2013

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Investigating the origins of high multilevel resistive switching in formingfree Ti/TiO2−x-based memory devices through experiments andsimulations

Journal of applied physics, 2017-03, Vol.121 (9)

2017

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Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.130-133

2010

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A compensated design of the LGAD gain layer

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2022-10, Vol.1040, p.167232, Article 167232

2022

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Development and test of innovative Low-Gain Avalanche Diodes for particle tracking in 4 dimensions

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2023-02, Vol.1047, p.167815, Article 167815

2023

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Nanowire transistor solutions for 5nm and beyond

2016 17th International Symposium on Quality Electronic Design (ISQED), 2016, p.269-274

2016

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Physical modelling of the SET/RESET characteristics and analog properties of TiOx/HfO2−x/TiOx-based RRAM devices

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.249-252

2016

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DTCO Launches Moore's Law Over the Feature Scaling Wall

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.41.1.1-41.1.4

2020

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Heterogeneous Integration Enabled by the State-of-the-Art 3DIC and CMOS Technologies: Design, Cost, and Modeling

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.3.4.1-3.4.4

2021

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Study of p-type silicon MOS capacitors at HL-LHC radiation levels through irradiation with a cobalt-60 gamma source and a TCAD simulation

Journal of instrumentation, 2021-06, Vol.16 (6)

2021

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Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor to}Circuit

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, p.258-261

2018

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2nm Node: Benchmarking FinFET vs Nano-Slab Transistor Architectures for Artificial Intelligence and Next Gen Smart Mobile Devices

2019 Symposium on VLSI Technology, 2019, p.T206-T207

2019

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Commissioning and simulation of CHROMIE, a high-rate test beam telescope

Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2−x-based memory devices through experiments and simulations

A Worst-Case Analysis of Trap-Assisted Tunneling Leakage in DRAM Using a Machine Learning Approach

Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties

End-to-end simulation of particle physics events with flow matching and generator oversampling

A Two-Prong Approach to the Simulation of DC-RSD: TCAD and SPICE

Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations

TCAD optimization of LGAD sensors for extremely high fluence applications

Study of p-type silicon MOS capacitors at HL-LHC radiation levels through irradiation with a cobalt-60 gamma source and a TCAD simulation

TCAD simulations of non-irradiated and irradiated low-gain avalanche diodes and comparison with measurements

Multiparty Call Control at the Network Edge

Can We Ever Get to a 100 nm Tall Library? Power Rail Design for 1nm Technology Node

Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits

Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology

Investigating the origins of high multilevel resistive switching in formingfree Ti/TiO2−x-based memory devices through experiments andsimulations

Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis

A compensated design of the LGAD gain layer

Development and test of innovative Low-Gain Avalanche Diodes for particle tracking in 4 dimensions

Nanowire transistor solutions for 5nm and beyond

Physical modelling of the SET/RESET characteristics and analog properties of TiOx/HfO2−x/TiOx-based RRAM devices

DTCO Launches Moore's Law Over the Feature Scaling Wall

Heterogeneous Integration Enabled by the State-of-the-Art 3DIC and CMOS Technologies: Design, Cost, and Modeling

Study of p-type silicon MOS capacitors at HL-LHC radiation levels through irradiation with a cobalt-60 gamma source and a TCAD simulation

Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor to}Circuit

2nm Node: Benchmarking FinFET vs Nano-Slab Transistor Architectures for Artificial Intelligence and Next Gen Smart Mobile Devices

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