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Unprecedented Integral-Free Debye Temperature Formulas: Sample Applications to Heat Capacities of ZnSe and ZnTe

Advances in Condensed Matter Physics, 2017-01, Vol.2017 (2017), p.1-37-043

2017

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Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb

AIP advances, 2013-08, Vol.3 (8), p.082108-082108

Pässler, R.

2013

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Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials

Physica status solidi. B. Basic research, 2010-01, Vol.247 (1), p.77-92

Pässler, R.

2010

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Representative hybrid model used for analyses of heat capacities of group-IV, III-V, and II-VI materials

Physica Status Solidi (b), 2011-04, Vol.248 (4), p.904-920

Pssler, R

2011

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Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots

Physical review. B, Condensed matter and materials physics, 2005-08, Vol.72 (8), p.085328.1-085328.7

2005

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Temperature dependence of fundamental band gaps in group IV, III–V, and II–VI materials via a two-oscillator model

Journal of applied physics, 2001-06, Vol.89 (11), p.6235-6240

Passler, R.

2001

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Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN

Journal of applied physics, 2001-10, Vol.90 (8), p.3956-3964

Pässler, R.

2001

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Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials: Limiting Debye temperature behavior detected from cryogenic heat capacity data

physica status solidi (b), 2010-01, Vol.247 (1), p.77-92

Pässler, R.

2010

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Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors

Physica status solidi. B. Basic research, 1999-12, Vol.216 (2), p.975-1007

P ssler, R.

1999

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Optical cross sections of deep levels in 4H-SiC

Journal of applied physics, 2006-09, Vol.100 (5)

2006

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Characteristic non-Debye heat capacity formula applied to GaN and ZnO

Journal of applied physics, 2011-08, Vol.110 (4), p.043530-043530-4

Pässler, R.

2011

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Moderate phonon dispersion shown by the temperature dependence of fundamental band gaps of various elemental and binary semiconductors including wide-band gap materials

Journal of applied physics, 2000-09, Vol.88 (5), p.2570-2577

Pässler, R.

2000

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Non-Debye behaviours of heat capacities of cubic II–VI materials

The Journal of physics and chemistry of solids, 2011-11, Vol.72 (11), p.1296-1311

Paessler, R

2011

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Basic Model Relations for Temperature Dependencies of Fundamental Energy Gaps in Semiconductors

Physica status solidi. B. Basic research, 1997-03, Vol.200 (1), p.155-172

P ssler, R.

1997

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Temperature dependence of exciton peak energies in multiple quantum wells

Journal of applied physics, 1998-03, Vol.83 (6), p.3356-3359

Pässler, R.

1998

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Dispersion-related description of temperature dependencies of band gaps in semiconductors

Physical review. B, Condensed matter, 2002-08, Vol.66 (8), Article 085201

Pässler, Roland

2002

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Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

Journal of applied physics, 1999-10, Vol.86 (8), p.4403-4411

1999

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Practicable Method for Estimating Thermal Depths from Phonon-Broadened Photoexcitation Cross-Section Bands. III. Generalization for Charged Centres

Physica status solidi. B. Basic research, 1993-09, Vol.179 (1), p.133-158

Pässler, R.

1993

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Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors

Journal of applied physics, 2004-07, Vol.96 (1), p.715-722

Pässler, Roland

2004

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Alternative Way for Detecting Franck-Condon Shifts from Thermally Broadened Photoneutralization Cross-Section Bands of Deep Traps in Semiconductors

Physica status solidi. B. Basic research, 1994-12, Vol.186 (2), p.K63-K68

Pässler, R.

1994

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Alternative analytical descriptions of the temperature dependence of the energy gap in cadmium sulfide

Physica status solidi. B. Basic research, 1996-01, Vol.193 (1), p.135-144

Pässler, R.

1996

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Comparison of different analytical descriptions of the temperature dependence of the indirect energy gap in silicon

Solid State Electronics, 1996-09, Vol.39 (9), p.1311-1319

Pässler, R.

1996

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Temperature and composition dependence of exciton peak positions and band gap energies of Zn1-xMgx(≤0.19)Se epitaxial films

Physica status solidi. B. Basic research, 1997-12, Vol.204 (2), p.685-699

1997

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Appropriate analytical description of the temperature dependence of exciton peak positions in GaAs/AlxGa1−xAs multiple quantum wells and the Γ8v−Γ6c gap of GaAs

Journal of applied physics, 1997-09, Vol.82 (5), p.2611-2616

1997

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Semi-empirical descriptions of temperature dependences of band gaps in semiconductors

Physica Status Solidi (b), 2003-04, Vol.236 (3), p.710-728

Passler, R

2003

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Unprecedented Integral-Free Debye Temperature Formulas: Sample Applications to Heat Capacities of ZnSe and ZnTe

Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb

Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials

Representative hybrid model used for analyses of heat capacities of group-IV, III-V, and II-VI materials

Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots

Temperature dependence of fundamental band gaps in group IV, III–V, and II–VI materials via a two-oscillator model

Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN

Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials: Limiting Debye temperature behavior detected from cryogenic heat capacity data

Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors

Optical cross sections of deep levels in 4H-SiC

Characteristic non-Debye heat capacity formula applied to GaN and ZnO

Moderate phonon dispersion shown by the temperature dependence of fundamental band gaps of various elemental and binary semiconductors including wide-band gap materials

Non-Debye behaviours of heat capacities of cubic II–VI materials

Basic Model Relations for Temperature Dependencies of Fundamental Energy Gaps in Semiconductors

Temperature dependence of exciton peak energies in multiple quantum wells

Dispersion-related description of temperature dependencies of band gaps in semiconductors

Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

Practicable Method for Estimating Thermal Depths from Phonon-Broadened Photoexcitation Cross-Section Bands. III. Generalization for Charged Centres

Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors

Alternative Way for Detecting Franck-Condon Shifts from Thermally Broadened Photoneutralization Cross-Section Bands of Deep Traps in Semiconductors

Alternative analytical descriptions of the temperature dependence of the energy gap in cadmium sulfide

Comparison of different analytical descriptions of the temperature dependence of the indirect energy gap in silicon

Temperature and composition dependence of exciton peak positions and band gap energies of Zn1-xMgx(≤0.19)Se epitaxial films

Appropriate analytical description of the temperature dependence of exciton peak positions in GaAs/AlxGa1−xAs multiple quantum wells and the Γ8v−Γ6c gap of GaAs

Semi-empirical descriptions of temperature dependences of band gaps in semiconductors

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