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The Efficacy of Pyrotinib as a Third- or Higher-Line Treatment in HER2-Positive Metastatic Breast Cancer Patients Exposed to Lapatinib Compared to Lapatinib-Naive Patients: A Real-World Study

Frontiers in pharmacology, 2021-08, Vol.12, p.682568-682568

2021

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High-speed Germanium-on-SOI lateral PIN photodiodes

IEEE photonics technology letters, 2004-11, Vol.16 (11), p.2547-2549

2004

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A real-world study on the efficacy and safety analysis of paclitaxel liposome in advanced breast cancer

Zhōnghuá zhŏngliú zázhì, 2023-01, Vol.45 (1), p.88

2023

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Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

IEEE electron device letters, 2005-11, Vol.26 (11), p.817-819

2005

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Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

IEEE electron device letters, 2005-03, Vol.26 (3), p.178-180

2005

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Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.1962-1968

2002

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Gemcitabine long-term maintenance chemotherapy benefits patients with survival: a multicenter, real-world study of advanced breast cancer treatment in China

Zhōnghuá zhŏngliú zázhì, 2024-03, Vol.46 (3), p.249

2024

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Hole and electron mobility enhancement in strained SiGe vertical MOSFETs

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.1975-1980

2001

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Circulating tumor cells in patients with breast tumors were detected by a novel device: a multicenter, clinical trial in China

Zhong hua yi xue za zhi, 2017-06, Vol.97 (24), p.1857-1861

2017

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A multicenter, randomized, controlled, phase Ⅳ clinical study of PEG-rhG-CSF for preventing chemotherapy induced neutropenia in patients with breast cancer

Zhong hua yi xue za zhi, 2018-04, Vol.98 (16), p.1231-1235

2018

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Study of bioequiavailability of paclitaxel for Injection (Albumin Bound) and abraxane and the efficacy of extension treatments in patients with metastatic breast cancer

Zhong hua yi xue za zhi, 2018-04, Vol.98 (16), p.1236-1241

2018

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High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidth

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, 2004, p.175-176 vol.1

2004

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High-Performance SiGe MODFET Technology

MRS proceedings, 2004, Vol.809, Article B7.2

2004

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Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, 2004, p.107-108 vol.1

2004

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Abstract P6-10-05: First-line chemotherapy versus first-line endocrine therapy in hormone receptor positive HER2 negative patients with metastatic breast cancer in China: Results of the study of breast cancer group of the Chinese Society of Clinical Oncology (CSCO)

Cancer research (Chicago, Ill.), 2013-12, Vol.73 (24_Supplement), p.P6-P6-10-05

2013

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80 nm gate-length Si∕Si0.7Ge0.3 n-MODFET with 194 GHz fmax

Electronics letters, 2003-11, Vol.39 (23), p.1684

2003

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Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias

IEEE electron device letters, 2005-03, Vol.26 (3), p.178-180

2005

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Laterally scaled Si-Si sub(0.7)Ge sub(0.3) n-MODFETs with f sub(max)>200 GHz and low operating bias

IEEE electron device letters, 2005-01, Vol.26 (3)

2005

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Built-in longitudinal field effects in sub-100-nm graded Si)1-x)Ge)x) channel PMOSFETs

IEEE transactions on electron devices, 2001-06, Vol.48 (6), p.1245-1250

2001

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Germanium-on-insulator photodetectors

IEEE International Conference on Group IV Photonics, 2005. 2nd, 2005, p.171-173

2005

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80nm gate-length Si/Si^sub 0.7^Ge^sub 0.3^ n-MODFET with 194 GHz f^sub max

Electronics letters, 2003-11, Vol.39 (23), p.1

2003

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80nm gate-length Si/Si sub( 0.7)Ge sub( 0.3) n-MODFET with 194 GHz f sub( max)

Electronics letters, 2003-11, Vol.39 (23), p.1-1

2003

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Static frequency divider circuit using 0.15 µm gate length Si^sub 0.2^Ge^sub 0.8^/Si^sub 0.7^Ge^sub 0.3^ p-MODFETs

Electronics letters, 2003-03, Vol.39 (6), p.1

2003

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Static frequency divider circuit using 0.15 mu m gate length Si sub( 0.2)Ge sub( 0.8)/Si sub( 0.7)Ge sub( 0.3) p-MODFETs

Electronics letters, 2003-03, Vol.39 (6), p.1-1

2003

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Built-in longitudinal field effects in sub-100-nm graded Si sub(1-x )Ge sub(x) channel PMOSFETs

IEEE transactions on electron devices, 2001-06, Vol.48 (6), p.1245-1249

2001

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The Efficacy of Pyrotinib as a Third- or Higher-Line Treatment in HER2-Positive Metastatic Breast Cancer Patients Exposed to Lapatinib Compared to Lapatinib-Naive Patients: A Real-World Study

High-speed Germanium-on-SOI lateral PIN photodiodes

A real-world study on the efficacy and safety analysis of paclitaxel liposome in advanced breast cancer

Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping

Gemcitabine long-term maintenance chemotherapy benefits patients with survival: a multicenter, real-world study of advanced breast cancer treatment in China

Hole and electron mobility enhancement in strained SiGe vertical MOSFETs

Circulating tumor cells in patients with breast tumors were detected by a novel device: a multicenter, clinical trial in China

A multicenter, randomized, controlled, phase Ⅳ clinical study of PEG-rhG-CSF for preventing chemotherapy induced neutropenia in patients with breast cancer

Study of bioequiavailability of paclitaxel for Injection (Albumin Bound) and abraxane and the efficacy of extension treatments in patients with metastatic breast cancer

High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidth

High-Performance SiGe MODFET Technology

Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping

Abstract P6-10-05: First-line chemotherapy versus first-line endocrine therapy in hormone receptor positive HER2 negative patients with metastatic breast cancer in China: Results of the study of breast cancer group of the Chinese Society of Clinical Oncology (CSCO)

80 nm gate-length Si∕Si0.7Ge0.3 n-MODFET with 194 GHz fmax

Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias

Laterally scaled Si-Si sub(0.7)Ge sub(0.3) n-MODFETs with f sub(max)>200 GHz and low operating bias

Built-in longitudinal field effects in sub-100-nm graded Si)1-x)Ge)x) channel PMOSFETs

Germanium-on-insulator photodetectors

80nm gate-length Si/Si^sub 0.7^Ge^sub 0.3^ n-MODFET with 194 GHz f^sub max

80nm gate-length Si/Si sub( 0.7)Ge sub( 0.3) n-MODFET with 194 GHz f sub( max)

Static frequency divider circuit using 0.15 µm gate length Si^sub 0.2^Ge^sub 0.8^/Si^sub 0.7^Ge^sub 0.3^ p-MODFETs

Static frequency divider circuit using 0.15 mu m gate length Si sub( 0.2)Ge sub( 0.8)/Si sub( 0.7)Ge sub( 0.3) p-MODFETs

Built-in longitudinal field effects in sub-100-nm graded Si sub(1-x )Ge sub(x) channel PMOSFETs

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