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Graft tension and knee stability after anterior cruciate ligament reconstruction

Clinical orthopaedics and related research, 2002, Vol.394 (394), p.154-160

2002

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Clinical and radiologic features of lumbar spinal stenosis and disc herniation with neuropathic bladder

Spine (Philadelphia, Pa. 1976), 2004-04, Vol.29 (8), p.869-873

2004

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GAS-SOURCE MOLECULAR BEAM EPITAXY GROWTH OF METAMORPHIC InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP HIGH-ELECTRON-MOBILITY STRUCTURES ON GaAs SUBSTRATES

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 2B, pp. 1004-1007. 2002, 2002, Vol.41 (2B), p.1004-1007

2002

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In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor

Japanese Journal of Applied Physics, 2004-10, Vol.43 (No. 10A), p.L1247-L1249

2004

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Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

Japanese Journal of Applied Physics, 2002-10, Vol.41 (10A), p.L1040-L1042

2002

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Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base

Japanese Journal of Applied Physics, 2001, Vol.40 (9R), p.5221-5226

2001

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Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4A), p.1592-1593

2003

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Fully strained heavily carbon-doped GaAs grown by gas-source molecular beam epitaxy using carbontetrabromide and its application to InGaP/GaAs heterojunction bipolar transistors

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1866-1868

1997

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A WSi base electrode and a heavily-doped thin base layer for high-speed and low-power InGaP/GaAs HBTs

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1804-1806

1997

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Conduction mechanism in indium tin oxide/electroinactive polypyrrole/indium tin oxide sandwich structures

Thin solid films, 1992-08, Vol.215 (2), p.200-202

1992

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SMALL-SCALE InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED AND LOW-POWER INTEGRATED-CIRCUIT APPLICATIONS

International journal of high speed electronics, 2001-03, Vol.11 (1), p.115-136

2001

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An Application of Polypyrrole Films Electropolymerized in NaOH Aqueous Solution to Non-linear MIM Devices

Chemistry letters, 1990-09, Vol.19 (9), p.1535-1538

1990

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Preparation of MIM(Metal-Insulator-Meta1) Non-linear Device Using Electropolymerized Poly- N -methylpyrrole

Chemistry letters, 1989-09, Vol.18 (9), p.1543-1544

1989

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Very-high-speed InP/InGaAs HBT ICs for optical transmission systems

IEEE journal of solid-state circuits, 1998-09, Vol.33 (9), p.1313-1320

1998

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Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In 0.5 Al 0.5 As/In 0.5 Ga 0.5 As/InAsP High-Electron-Mobility Structures on GaAs Substrates

Japanese Journal of Applied Physics, 2002-02, Vol.41 (Part 1, No. 2B), p.1004-1007

2002

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Spectral characteristics of an InP/InGaAs distributed absorbing Bragg reflector

Applied physics letters, 1998-01, Vol.72 (2), p.155-157

1998

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Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector

Applied physics letters, 1998-07, Vol.73 (3), p.297-299

1998

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Small-scaled InGaP/GaAs HBT's with WSi/Ti base electrode and buried SiO sub(2)

IEEE transactions on electron devices, 1998-11, Vol.45 (11), p.2276-2282

1998

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Numerical simulation of silicon carbide epitaxial growth in a vertical CVD reactor

The Proceedings of The Computational Mechanics Conference, 2014-11, Vol.2014.27, p.128-129

2014

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An analysis of higher fatty acids in Candida in the vigina by paper chromatography

Japanese Journal of Medical Mycology, 1960, Vol.1 (4), p.346-351

OUCHI, Kiyoshi

1960

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Heavily carbon-doped InGaP/GaAs HBT's with buried polycrystalline GaAs under the base electrode

IEEE transactions on electron devices, 1998-11, Vol.45 (11), p.2268-2275

1998

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High-speed InGaP/GaAs heterojunction bipolar transistors with buried SiO2 using WSi as the base electrode

IEEE electron device letters, 1997-04, Vol.18 (4), p.154-156

1997

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High-speed InGaP/GaAs transistors with a sidewall base contact structure

IEEE electron device letters, 1997-11, Vol.18 (11), p.562-564

1997

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Electropolymerization of Electroinactive Polypyrrole Film for a Nonlinear MIM Switching Device

Denki Kagaku oyobi Kogyo Butsuri Kagaku, 1991-12, Vol.59 (12), p.1019-1025

1991

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Polycrystal isolation of InGaP/GaAs HBTs to reduce collector capacitance

IEEE electron device letters, 1998-02, Vol.19 (2), p.47-49

1998

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Graft tension and knee stability after anterior cruciate ligament reconstruction

Clinical and radiologic features of lumbar spinal stenosis and disc herniation with neuropathic bladder

GAS-SOURCE MOLECULAR BEAM EPITAXY GROWTH OF METAMORPHIC InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP HIGH-ELECTRON-MOBILITY STRUCTURES ON GaAs SUBSTRATES

In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base

Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates

Fully strained heavily carbon-doped GaAs grown by gas-source molecular beam epitaxy using carbontetrabromide and its application to InGaP/GaAs heterojunction bipolar transistors

A WSi base electrode and a heavily-doped thin base layer for high-speed and low-power InGaP/GaAs HBTs

Conduction mechanism in indium tin oxide/electroinactive polypyrrole/indium tin oxide sandwich structures

SMALL-SCALE InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED AND LOW-POWER INTEGRATED-CIRCUIT APPLICATIONS

An Application of Polypyrrole Films Electropolymerized in NaOH Aqueous Solution to Non-linear MIM Devices

Preparation of MIM(Metal-Insulator-Meta1) Non-linear Device Using Electropolymerized Poly- N -methylpyrrole

Very-high-speed InP/InGaAs HBT ICs for optical transmission systems

Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In 0.5 Al 0.5 As/In 0.5 Ga 0.5 As/InAsP High-Electron-Mobility Structures on GaAs Substrates

Spectral characteristics of an InP/InGaAs distributed absorbing Bragg reflector

Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector

Small-scaled InGaP/GaAs HBT's with WSi/Ti base electrode and buried SiO sub(2)

Numerical simulation of silicon carbide epitaxial growth in a vertical CVD reactor

An analysis of higher fatty acids in Candida in the vigina by paper chromatography

Heavily carbon-doped InGaP/GaAs HBT's with buried polycrystalline GaAs under the base electrode

High-speed InGaP/GaAs heterojunction bipolar transistors with buried SiO2 using WSi as the base electrode

High-speed InGaP/GaAs transistors with a sidewall base contact structure

Electropolymerization of Electroinactive Polypyrrole Film for a Nonlinear MIM Switching Device

Polycrystal isolation of InGaP/GaAs HBTs to reduce collector capacitance

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