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Hidden diversity under morphology–based identifications of widespread invasive species: the case of the ‘well–known’ hydromedusa Craspedacusta sowerbii Lankester 1880

Animal biodiversity and conservation, 2019-01, Vol.42 (2), p.301-318

2019

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Electron traps created in gate oxides by Fowler–Nordheim injections

Microelectronics and reliability, 1998-02, Vol.38 (2), p.227-231

1998

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Surface potential determination in metal-oxide-semiconductor capacitors

Journal of applied physics, 1994-11, Vol.76 (9), p.5278-5287

1994

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Relaxation of the space charge created by Fowler–Nordheim injections in metal–oxide–semiconductor capacitors

Journal of applied physics, 1996-11, Vol.80 (9), p.5469-5477

1996

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Influence of polycide deposition on the reliability of wet and nitrided oxides

Journal of non-crystalline solids, 1999-04, Vol.245 (1), p.97-103

1999

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Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes

IEEE transactions on electron devices, 1993-06, Vol.40 (6), p.1104-1111

1993

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Methods to determine electron traps created in gate oxides by Fowler-Nordheim injection

Journal of non-crystalline solids, 1997-11, Vol.220 (2), p.157-163

1997

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New insights on the charging and discharging of electron traps created by homogeneous electron injection in gate oxide

Microelectronic engineering, 1997-06, Vol.36 (1), p.309-312

1997

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Reliability of nitrided wet silicon dioxide thin films in WSi2 or TaSi2 polycide process : influence of the nitridation temperature

Microelectronics and reliability, 1998-06, Vol.38 (6), p.937-942

1998

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Effects of high field electron injection into the gate oxide of P-channel metal-oxide-semiconductor transistors

Journal of applied physics, 1993-10, Vol.74 (8), p.5078-5085

1993

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Hot-carrier effects on leakage currents in MOSFETs—Modelling and experiment

Microelectronics and reliability, 1993, Vol.33 (11), p.1759-1777

1993

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Experiments and modelling to determine trapped holes and slow states in Fowler-Nordheim stressed MOS capacitors

Microelectronic engineering, 1995-06, Vol.28 (1), p.329-332

1995

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Influence of WSi2 polysilicide gate process on integrity and reliability of gate and tunnel oxides

Journal of non-crystalline solids, 1995-07, Vol.187, p.156-159

1995

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Two-dimensional modelling and characterization of gate-to-drain overlap contribution on the leakage current of a MOSFET, used as a GCD

Quality and reliability engineering international, 1993-07, Vol.9 (4), p.337-340

1993

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Characterization of leakage currents in long-lifetime capacitors

IEEE transactions on electron devices, 1986-09, Vol.33 (9), p.1366-1370

1986

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Étude d'un effet photothermique particulier dans les semi-conducteurs

Revue de physique appliquée, 1967, Vol.2 (2), p.72-78

Oualid, J.

1967

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Etude du phénomème de vieillissement des transistors MOS microniques par l'analyse des caractéristiques DCG

Journal de physique. III (Les Ulis), 1992-06, Vol.2 (6), p.979-994

1992

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Influence of illumination on the grain boundary recombination velocity in silicon

Journal of applied physics, 1984-02, Vol.55 (4), p.1195-1205

1984

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I. considérations - Sur le rendement des systèmes utilisant l'énergie solaire en régime dynamique

Le journal de physique et le radium, 1959, Vol.20 (6), p.649-651

1959

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A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon

Solar cells, 1987-04, Vol.20 (3), p.167-176

1987

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3D-Modelling of polycrystalline silicon solar cells

Revue de physique appliquée, 1987-07, Vol.22 (7), p.677-685

1987

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Modelling of base doping concentration influence in polycrystalline silicon solar cells

Solar cells, 1987-03, Vol.20 (2), p.145-154

1987

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Grain boundary barrier height in base and space charge regions

Solid-state electronics, 1983-01, Vol.26 (11), p.1069-1075

1983

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Coupling between the front and back interfaces in the gate-controlled P+PN+ diode on silicon-on-insulator

Microelectronics, 1994-06, Vol.25 (4), p.307-322

1994

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Influence of preparation conditions on electron trapping in CdS polycrystalline layers

Journal of physics. C, Solid state physics, 1979-06, Vol.12 (12), p.2323-2332

1979

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Hidden diversity under morphology–based identifications of widespread invasive species: the case of the ‘well–known’ hydromedusa Craspedacusta sowerbii Lankester 1880

Electron traps created in gate oxides by Fowler–Nordheim injections

Surface potential determination in metal-oxide-semiconductor capacitors

Relaxation of the space charge created by Fowler–Nordheim injections in metal–oxide–semiconductor capacitors

Influence of polycide deposition on the reliability of wet and nitrided oxides

Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes

Methods to determine electron traps created in gate oxides by Fowler-Nordheim injection

New insights on the charging and discharging of electron traps created by homogeneous electron injection in gate oxide

Reliability of nitrided wet silicon dioxide thin films in WSi2 or TaSi2 polycide process : influence of the nitridation temperature

Effects of high field electron injection into the gate oxide of P-channel metal-oxide-semiconductor transistors

Hot-carrier effects on leakage currents in MOSFETs—Modelling and experiment

Experiments and modelling to determine trapped holes and slow states in Fowler-Nordheim stressed MOS capacitors

Influence of WSi2 polysilicide gate process on integrity and reliability of gate and tunnel oxides

Two-dimensional modelling and characterization of gate-to-drain overlap contribution on the leakage current of a MOSFET, used as a GCD

Characterization of leakage currents in long-lifetime capacitors

Étude d'un effet photothermique particulier dans les semi-conducteurs

Etude du phénomème de vieillissement des transistors MOS microniques par l'analyse des caractéristiques DCG

Influence of illumination on the grain boundary recombination velocity in silicon

I. considérations - Sur le rendement des systèmes utilisant l'énergie solaire en régime dynamique

A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon

3D-Modelling of polycrystalline silicon solar cells

Modelling of base doping concentration influence in polycrystalline silicon solar cells

Grain boundary barrier height in base and space charge regions

Coupling between the front and back interfaces in the gate-controlled P+PN+ diode on silicon-on-insulator

Influence of preparation conditions on electron trapping in CdS polycrystalline layers

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