UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Surface phonons of clean, hydrogen- and deuterium-terminated Si(0 0 1) surfaces

Surface science, 2006-09, Vol.600 (17), p.3446-3455

2006

Volltextzugriff (PDF)

Temperature-Dependent Electronic and Vibrational Structure of the 1-Ethyl-3-methylimidazolium Bis(trifluoromethylsulfonyl)amide Room-Temperature Ionic Liquid Surface: A Study with XPS, UPS, MIES, and HREELS

The journal of physical chemistry. B, 2007-05, Vol.111 (18), p.4801-4806

2007

Volltextzugriff (PDF)

Single and Multiple Oxygen Vacancies in Ultrathin hbox SiO 2 Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation

IEEE electron device letters, 2010-08, Vol.31 (8), p.881-883

2010

Volltextzugriff (PDF)

Single and Multiple Oxygen Vacancies in Ultrathin [Formula Omitted] Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation

IEEE electron device letters, 2010-08, Vol.31 (8), p.881

2010

Volltextzugriff (PDF)

Energy Renormalization and Damping of Long-Wavelength Phonons in Amorphous Solids

Physica Status Solidi (b) (Germany), 2001-06, Vol.225 (2), p.289-299

2001

Volltextzugriff (PDF)

Ab initio molecular dynamics simulation for structural transition of Zr during rapid quenching processes

Computational materials science, 2008-10, Vol.43 (4), p.1123-1129

2008

Volltextzugriff (PDF)

Self-Energy and Damping of Long-Wavelength Magnons in Amorphous Ferromagnets

Physica status solidi. B. Basic research, 1999-12, Vol.216 (2), p.1073-1088

1999

Volltextzugriff (PDF)

First Principle Calculation of the Leakage Current Through \hbox and \hbox\hbox Gate Dielectrics in MOSFETs

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.690-695

2010

Volltextzugriff (PDF)

Surface Reaction of C 60 with Atomic Hydrogen: Formation of a Protecting Hydrocarbon Layer

Fullerenes, nanotubes, and carbon nanostructures, 2005-04, Vol.13 (sup1), p.131-138

2005

Volltextzugriff (PDF)

Single and Multiple Oxygen Vacancies in Ultrathin \hbox Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation

IEEE electron device letters, 2010-08, Vol.31 (8), p.881-883

2010

Volltextzugriff (PDF)

Surface phonons of clean and hydrogen terminated Si(1 1 0) surfaces

Surface science, 2005-05, Vol.582 (1), p.159-172

2005

Volltextzugriff (PDF)

Strong dispersion of the surface optical phonon of silicon carbide in the near vicinity of the surface Brillouin zone center

Surface science, 2006-07, Vol.600 (14), p.2886-2893

2006

Volltextzugriff (PDF)

Vibrational signature of oxygen on 6H–SiC(0 0 0 1)

Surface science, 2008-01, Vol.602 (2), p.584-589

2008

Volltextzugriff (PDF)

Oxygen related defects and the reliability of high-k dielectric films in FETs

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG), 2013, p.1-4

2013

Volltextzugriff (PDF)

A Comparative Study on the Electronic Structure of the 1-Ethyl-3-Methylimidazolium Bis(trifluoromethylsulfonyl)amide RT-Ionic Liquid by Electron Spectroscopy and First Principles Calculations

Zeitschrift für physikalische Chemie (Neue Folge), 2006-10, Vol.220 (10), p.1407-1416

2006

Volltextzugriff (PDF)

Erratum to “Surface phonons of clean and hydrogen terminated Si(1 1 0) surfaces” [Surface Science 582 (2005) 159–172]

Surface science, 2005-11, Vol.592 (1), p.189-189

2005

Volltextzugriff (PDF)

Surface Reaction of C60 with Atomic Hydrogen: Formation of a Protecting Hydrocarbon Layer

Fullerenes, nanotubes, and carbon nanostructures, 2005-04, Vol.13, p.131-138

2005

Volltextzugriff (PDF)

1 – 17 von 17

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(16)
Mit Volltextzugriff
(16)

Publikationsform

Artikel
(16)
Tagungsberichte
(1)

Sprache

Englisch
(17)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Surface phonons of clean, hydrogen- and deuterium-terminated Si(0 0 1) surfaces

Temperature-Dependent Electronic and Vibrational Structure of the 1-Ethyl-3-methylimidazolium Bis(trifluoromethylsulfonyl)amide Room-Temperature Ionic Liquid Surface: A Study with XPS, UPS, MIES, and HREELS

Single and Multiple Oxygen Vacancies in Ultrathin hbox SiO 2 Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation

Single and Multiple Oxygen Vacancies in Ultrathin [Formula Omitted] Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation

Energy Renormalization and Damping of Long-Wavelength Phonons in Amorphous Solids

Ab initio molecular dynamics simulation for structural transition of Zr during rapid quenching processes

Self-Energy and Damping of Long-Wavelength Magnons in Amorphous Ferromagnets

First Principle Calculation of the Leakage Current Through \hbox and \hbox\hbox Gate Dielectrics in MOSFETs

Surface Reaction of C 60 with Atomic Hydrogen: Formation of a Protecting Hydrocarbon Layer

Single and Multiple Oxygen Vacancies in Ultrathin \hbox Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation

Surface phonons of clean and hydrogen terminated Si(1 1 0) surfaces

Strong dispersion of the surface optical phonon of silicon carbide in the near vicinity of the surface Brillouin zone center

Vibrational signature of oxygen on 6H–SiC(0 0 0 1)

Oxygen related defects and the reliability of high-k dielectric films in FETs

A Comparative Study on the Electronic Structure of the 1-Ethyl-3-Methylimidazolium Bis(trifluoromethylsulfonyl)amide RT-Ionic Liquid by Electron Spectroscopy and First Principles Calculations

Erratum to “Surface phonons of clean and hydrogen terminated Si(1 1 0) surfaces” [Surface Science 582 (2005) 159–172]

Surface Reaction of C60 with Atomic Hydrogen: Formation of a Protecting Hydrocarbon Layer

Suchergebnisse filtern