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Near-infrared photoluminescence properties of Er/Yb- and Ho/Yb-doped multicomponent silicate glass – The role of GeO2, Al2O3 and ZnO

Journal of non-crystalline solids, 2022-04, Vol.582, p.121457, Article 121457

2022

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THE EFFECT OF ZINC CONTENT ON THE ENHANCEMENT Er3+-Yb3+ LUMINESCENCE PROPERTIES IN THE SILICATE GLASS MATRIX

Ceramics (Praha), 2018-04, Vol.62 (2), p.188-193

Vytykacova, Sona

2018

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INFLUENCE OF PREPARATION CONDITIONS ON THE MICROSTRUCTURE AND OPTICAL PROPERTIES OF LiNbO3 THIN FILMS

Ceramics (Praha), 2015-01, Vol.59 (2), p.164-168

2015

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Er implantation into various cuts of ZnO – experimental study and DFT modelling

Journal of alloys and compounds, 2020-03, Vol.816, p.152455, Article 152455

2020

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InGaN GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

Nanotechnology, 2014-11, Vol.25 (45), p.455501-455501

2014

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GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Journal of crystal growth, 2017-04, Vol.464, p.64-68

2017

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Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Journal of crystal growth, 2017-04, Vol.464, p.59-63

2017

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Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

CrystEngComm, 2019, Vol.21 (2), p.356-362

2019

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Optical properties of bi-doped epoxy novolak resin containing Ce, Dy, and Y ions

Journal of applied polymer science, 2012-07, Vol.125 (1), p.710-715

2012

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Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

Journal of crystal growth, 2015-03, Vol.414, p.156-160

2015

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InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 mu m

Journal of crystal growth, 2015-03, Vol.414, p.167-171

2015

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Erbium ion implantation into diamond - measurement and modelling of the crystal structure

Physical chemistry chemical physics : PCCP, 2017-02, Vol.19 (8), p.6233-6245

2017

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Co‐implantation of Er and Yb ions into single‐crystalline and nano‐crystalline diamond

Surface and interface analysis, 2018-11, Vol.50 (11), p.1218-1223

2018

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Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Applied surface science, 2014-05, Vol.301, p.173-177

2014

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1.5 μm photoluminescence and upconversion photoluminescence in GeGaAsS:Er chalcogenide glass

Pure and applied chemistry, 2019-11, Vol.91 (11), p.1757-1767

2019

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Thin films of ErNbO4 and YbNbO4 prepared by sol–gel

Journal of sol-gel science and technology, 2016-06, Vol.78 (3), p.600-605

2016

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Optical waveguides in Er:LiNbO3 fabricated by different techniques – A comparison

Optical materials, 2016-03, Vol.53, p.160-168

2016

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Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing

Micromachines (Basel), 2018-06, Vol.9 (7), p.316

2018

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Photoluminescence in pulsed-laser deposited GeGaSbS:Er films

Optical materials, 2018-11, Vol.85, p.246-253

2018

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Photocurrent spectra of semi-insulating GaAs M–S–M diodes: Role of the contacts

Solid-state electronics, 2016-04, Vol.118, p.30-35

2016

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Electrochemical properties of corrosion products formed on Zn-Mg, Zn-Al and Zn-Al-Mg coatings in model atmospheric conditions

Materials and corrosion, 2015-08, Vol.66 (8), p.777-782

2015

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1.2 µm and 1.5 µm near-infrared photoluminescence and visible upconversion photoluminescence in GeGaS:Er3+/Ho3+ glasses under 980 nm excitation

Journal of materials science. Materials in electronics, 2018-10, Vol.29 (20), p.17314-17322

2018

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Intense near-infrared and midinfrared luminescence from the Dy3+-doped GeSe2–Ga2Se3–MI (M=K, Cs, Ag) chalcohalide glasses at 1.32, 1.73, and 2.67 μm

Journal of applied physics, 2011-02, Vol.109 (3)

2011

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Physico-chemical and optical properties of Er 3+ -doped and Er 3+ /Yb 3+ -co-doped Ge 25 Ga 9.5 Sb 0.5 S 65 chalcogenide glass

Pure and applied chemistry, 2017-04, Vol.89 (4), p.429-436

2017

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Near-infrared photoluminescence properties of Er/Yb- and Ho/Yb-doped multicomponent silicate glass – The role of GeO2, Al2O3 and ZnO

THE EFFECT OF ZINC CONTENT ON THE ENHANCEMENT Er3+-Yb3+ LUMINESCENCE PROPERTIES IN THE SILICATE GLASS MATRIX

INFLUENCE OF PREPARATION CONDITIONS ON THE MICROSTRUCTURE AND OPTICAL PROPERTIES OF LiNbO3 THIN FILMS

Er implantation into various cuts of ZnO – experimental study and DFT modelling

InGaN GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Optical properties of bi-doped epoxy novolak resin containing Ce, Dy, and Y ions

Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 mu m

Erbium ion implantation into diamond - measurement and modelling of the crystal structure

Co‐implantation of Er and Yb ions into single‐crystalline and nano‐crystalline diamond

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

1.5 μm photoluminescence and upconversion photoluminescence in GeGaAsS:Er chalcogenide glass

Thin films of ErNbO4 and YbNbO4 prepared by sol–gel

Optical waveguides in Er:LiNbO3 fabricated by different techniques – A comparison

Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing

Photoluminescence in pulsed-laser deposited GeGaSbS:Er films

Photocurrent spectra of semi-insulating GaAs M–S–M diodes: Role of the contacts

Electrochemical properties of corrosion products formed on Zn-Mg, Zn-Al and Zn-Al-Mg coatings in model atmospheric conditions

1.2 µm and 1.5 µm near-infrared photoluminescence and visible upconversion photoluminescence in GeGaS:Er3+/Ho3+ glasses under 980 nm excitation

Intense near-infrared and midinfrared luminescence from the Dy3+-doped GeSe2–Ga2Se3–MI (M=K, Cs, Ag) chalcohalide glasses at 1.32, 1.73, and 2.67 μm

Physico-chemical and optical properties of Er 3+ -doped and Er 3+ /Yb 3+ -co-doped Ge 25 Ga 9.5 Sb 0.5 S 65 chalcogenide glass

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