UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Epitaxial Ge-Gd2O3 on Si(111) substrate by sputtering for germanium-on-insulator applications

Thin solid films, 2021-08, Vol.731, Article 138732

2021

Volltextzugriff (PDF)

Introducing crystalline rare-earth oxides into Si technologies

Physica status solidi. A, Applications and materials science, 2008-04, Vol.205 (4), p.695-707

2008

Volltextzugriff (PDF)

Improvement of crystal quality and surface morphology of Ge/Gd2O3/Si(111) epitaxial layers by cyclic annealing and regrowth

Journal of physics. D, Applied physics, 2022-03, Vol.55 (11)

2022

Volltextzugriff (PDF)

MBE-grown Si and Si1−xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

Nanotechnology, 2013-12, Vol.24 (50)

2013

Volltextzugriff (PDF)

Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

Applied physics letters, 2006-04, Vol.88 (15)

2006

Volltextzugriff (PDF)

Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy

Journal of crystal growth, 2013-09, Vol.378, p.254-258

2013

Volltextzugriff (PDF)

Photonic crystals for highly efficient silicon single junction solar cells

Solar energy materials and solar cells, 2021-12, Vol.233, p.111337, Article 111337

2021

Volltextzugriff (PDF)

Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

Journal of applied physics, 2006-04, Vol.99 (7), p.074105-074105-6

2006

Volltextzugriff (PDF)

Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

Journal of applied physics, 2002-06, Vol.91 (11), p.8986-8991

2002

Volltextzugriff (PDF)

Formation of twinning-superlattice regions by artificial stacking of Si layers

Journal of crystal growth, 2006-05, Vol.290 (2), p.392-397

2006

Volltextzugriff (PDF)

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

Journal of applied physics, 2018-08, Vol.124 (6)

2018

Volltextzugriff (PDF)

Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: a diffraction study

Semiconductor science and technology, 2009-04, Vol.24 (4), p.045021-045021 (6)

2009

Volltextzugriff (PDF)

Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)

Journal of crystal growth, 2011-05, Vol.323 (1), p.144-149

2011

Volltextzugriff (PDF)

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

Solid-state electronics, 2006-06, Vol.50 (6), p.979-985

2006

Volltextzugriff (PDF)

Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions

Applied physics letters, 2002-01, Vol.80 (2), p.297-299

2002

Volltextzugriff (PDF)

Downscaling of defect-passivated Gd2O3 thin films on p-Si(0 0 1) wafers grown by H2O-assisted atomic layer deposition

Semiconductor science and technology, 2010-10, Vol.25 (10), p.105001-105001

2010

Volltextzugriff (PDF)

Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy

Journal of physics. D, Applied physics, 2018-08, Vol.51 (32), p.32

2018

Volltextzugriff (PDF)

Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon

Journal of applied physics, 2016-10, Vol.120 (14)

2016

Volltextzugriff (PDF)

Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy

Semiconductor science and technology, 2018-10, Vol.33 (10), p.104006

2018

Volltextzugriff (PDF)

Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing

Semiconductor science and technology, 2008-03, Vol.23 (3), p.035010

2008

Volltextzugriff (PDF)

Towards understanding epitaxial growth of alternative high- K dielectrics on Si(001): Application to praseodymium oxide

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-07, Vol.21 (4), p.1765-1772

2003

Volltextzugriff (PDF)

Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications

Microelectronic engineering, 2008-12, Vol.85 (12), p.2350-2353

2008

Volltextzugriff (PDF)

Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)

Applied physics letters, 2014-01, Vol.104 (1)

2014

Volltextzugriff (PDF)

Erratum: “Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)” [Appl. Phys. Lett. 104 , 012906 (2014)]

Applied physics letters, 2015-04, Vol.106 (14)

2015

Volltextzugriff (PDF)

Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3

Journal of applied physics, 2016-07, Vol.120 (1)

2016

Volltextzugriff (PDF)

1 – 25 von 510

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(416)
Mit Volltextzugriff
(438)

Publikationsform

Sprache

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(307)
Physical Sciences
(199)
Physics
(195)
Physics, Applied
(131)
Technology
(122)
Exact Sciences And Technology
(91)
Materials Science
(88)
Life Sciences & Biomedicine
(86)
Humans
(77)
Materials Science, Multidisciplinary
(71)
Engineering
(57)
Physics, Condensed Matter
(57)
Engineering, Electrical & Electronic
(55)
Male
(50)
Medicin Och Hälsovetenskap
(46)
Female
(41)
Biological And Medical Sciences
(35)
Science & Technology - Other Topics
(34)
Nanoscience & Nanotechnology
(31)
Aged
(29)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Epitaxial Ge-Gd2O3 on Si(111) substrate by sputtering for germanium-on-insulator applications

Introducing crystalline rare-earth oxides into Si technologies

Improvement of crystal quality and surface morphology of Ge/Gd2O3/Si(111) epitaxial layers by cyclic annealing and regrowth

MBE-grown Si and Si1−xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy

Photonic crystals for highly efficient silicon single junction solar cells

Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

Formation of twinning-superlattice regions by artificial stacking of Si layers

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: a diffraction study

Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions

Downscaling of defect-passivated Gd2O3 thin films on p-Si(0 0 1) wafers grown by H2O-assisted atomic layer deposition

Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy

Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon

Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy

Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing

Towards understanding epitaxial growth of alternative high- K dielectrics on Si(001): Application to praseodymium oxide

Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications

Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)

Erratum: “Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)” [Appl. Phys. Lett. 104 , 012906 (2014)]

Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3

Suchergebnisse filtern