UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 477

Sortiert nach

Materials issues and devices of α- and β-Ga2O3

Journal of applied physics, 2019-10, Vol.126 (16)

2019

Link zum Volltext

Verfügbarkeit prüfen

Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Applied physics letters, 2023-04, Vol.122 (16)

2023

Link zum Volltext

Verfügbarkeit prüfen

Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Applied physics letters, 2022-12, Vol.121 (26)

2022

Link zum Volltext

Verfügbarkeit prüfen

Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Applied physics letters, 2024-01, Vol.124 (4)

2024

Link zum Volltext

Verfügbarkeit prüfen

Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching

Journal of crystal growth, 2021-12, Vol.576, p.126387, Article 126387

2021

Link zum Volltext

Verfügbarkeit prüfen

Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

Journal of applied physics, 2014-04, Vol.115 (15)

2014

Link zum Volltext

Verfügbarkeit prüfen

Follistatin-like 1, a Secreted Muscle Protein, Promotes Endothelial Cell Function and Revascularization in Ischemic Tissue through a Nitric-oxide Synthase-dependent Mechanism

The Journal of biological chemistry, 2008-11, Vol.283 (47), p.32802-32811

2008

Link zum Volltext

Verfügbarkeit prüfen

Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

Semiconductor science and technology, 2018-01, Vol.33 (1)

2018

Link zum Volltext

Verfügbarkeit prüfen

In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Japanese Journal of Applied Physics, 2020-11, Vol.59 (11)

2020

Link zum Volltext

Verfügbarkeit prüfen

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

Journal of crystal growth, 2010-12, Vol.312 (24), p.3569-3573

2010

Link zum Volltext

Verfügbarkeit prüfen

IR photoresponse characteristics of Mg2Ge pn-junction photodiodes fabricated by rapid thermal annealing

Journal of alloys and compounds, 2019-05, Vol.787, p.578-584

2019

Link zum Volltext

Verfügbarkeit prüfen

DIP2A Functions as a FSTL1 Receptor

The Journal of biological chemistry, 2010-03, Vol.285 (10), p.7127-7134

2010

Link zum Volltext

Verfügbarkeit prüfen

Thermal and piezoelectric properties of La3Ta0.5Ga5.1Al0.4O14 (LTGA) for high temperature sensors

Journal of alloys and compounds, 2015-10, Vol.647, p.1086-1090

2015

Link zum Volltext

Verfügbarkeit prüfen

Homoepitaxial growth of 1ˉ02 β-Ga 2 O 3 by halide vapor phase epitaxy

Semiconductor science and technology, 2023-10, Vol.38 (10), p.105003

2023

Link zum Volltext

Verfügbarkeit prüfen

Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxy

Semiconductor science and technology, 2023-10, Vol.38 (10)

2023

Link zum Volltext

Verfügbarkeit prüfen

Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3

Japanese Journal of Applied Physics, 2023-08, Vol.62 (8), p.080901

2023

Link zum Volltext

Verfügbarkeit prüfen

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Journal of crystal growth, 2008-01, Vol.310 (1), p.5-7

2008

Link zum Volltext

Verfügbarkeit prüfen

Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates

Journal of crystal growth, 2012-07, Vol.350 (1), p.38-43

2012

Link zum Volltext

Verfügbarkeit prüfen

Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga 2 O 3

Japanese Journal of Applied Physics, 2023-08, Vol.62 (8), p.80901

2023

Link zum Volltext

Verfügbarkeit prüfen

Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2110-2112

2011

Link zum Volltext

Verfügbarkeit prüfen

Activin A and Follistatin-Like 3 Determine the Susceptibility of Heart to Ischemic Injury

Circulation (New York, N.Y.), 2009-10, Vol.120 (16), p.1606-1615

2009

Link zum Volltext

Verfügbarkeit prüfen

Cardiac Myocyte-specific Ablation of Follistatin-like 3 Attenuates Stress-induced Myocardial Hypertrophy

The Journal of biological chemistry, 2011-03, Vol.286 (11), p.9840-9848

2011

Link zum Volltext

Verfügbarkeit prüfen

Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

Japanese Journal of Applied Physics, 2003-01, Vol.42 (Part 2, No.1A/B), p.L1-L3

2003

Link zum Volltext

Verfügbarkeit prüfen

Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy

Journal of applied physics, 2015-08, Vol.118 (8)

2015

Link zum Volltext

Verfügbarkeit prüfen

Activation of signal transducer and activator of transcription 3 protects cardiomyocytes from hypoxia/reoxygenation-induced oxidative stress through the upregulation of manganese superoxide dismutase

Circulation (New York, N.Y.), 2001-08, Vol.104 (9), p.979-981

2001

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 477

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(394)
Mit Volltextzugriff
(439)

Publikationsform

Sprache

Englisch
(403)
Japanisch
(211)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Materials issues and devices of α- and β-Ga2O3

Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching

Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers

Follistatin-like 1, a Secreted Muscle Protein, Promotes Endothelial Cell Function and Revascularization in Ischemic Tissue through a Nitric-oxide Synthase-dependent Mechanism

Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

IR photoresponse characteristics of Mg2Ge pn-junction photodiodes fabricated by rapid thermal annealing

DIP2A Functions as a FSTL1 Receptor

Thermal and piezoelectric properties of La3Ta0.5Ga5.1Al0.4O14 (LTGA) for high temperature sensors

Homoepitaxial growth of 1ˉ02 β-Ga 2 O 3 by halide vapor phase epitaxy

Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxy

Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates

Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga 2 O 3

Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy

Activin A and Follistatin-Like 3 Determine the Susceptibility of Heart to Ischemic Injury

Cardiac Myocyte-specific Ablation of Follistatin-like 3 Attenuates Stress-induced Myocardial Hypertrophy

Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy

Activation of signal transducer and activator of transcription 3 protects cardiomyocytes from hypoxia/reoxygenation-induced oxidative stress through the upregulation of manganese superoxide dismutase

Suchergebnisse filtern