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Group III nitride semiconductors for short wavelength light-emitting devices

Reports on progress in physics, 1998-01, Vol.61 (1), p.1-75

1998

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Semiconductors and the Information Revolution: Magic Crystals That Made IT Happen

Orton, John W

1, 2009

Volltextzugriff (PDF)

Photoluminescence studies of InGaN/GaN multi-quantum wells

Semiconductor science and technology, 2000-06, Vol.15 (6), p.497-505

2000

Volltextzugriff (PDF)

Acceptor binding energy in GaN and related alloys

Semiconductor science and technology, 1995-01, Vol.10 (1), p.101-104

Orton, J W

1995

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Photoluminescence of MBE grown wurtzite Be-doped GaN

Semiconductor science and technology, 1998-05, Vol.13 (5), p.500-504

1998

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Effect of strain on GaN exciton spectra

Semiconductor science and technology, 1996-07, Vol.11 (7), p.1026-1029

Orton, J W

1996

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The electron mobility and compensation in n-type GaN

Semiconductor science and technology, 1998-03, Vol.13 (3), p.310-313

1998

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The Hall effect in polycrystalline and powdered semiconductors

Reports on progress in physics, 1980-11, Vol.43 (11), p.1263-1307

1980

Volltextzugriff (PDF)

Exciton spectra and spin - orbit splitting in GaN epitaxial films

Semiconductor science and technology, 1997-01, Vol.12 (1), p.64-68

Orton, J W

1997

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Low-temperature luminescence study of GaN films grown by MBE

Semiconductor science and technology, 1996-03, Vol.11 (3), p.366-371

1996

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Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy

Semiconductor science and technology, 1998-01, Vol.13 (1), p.71-74

1998

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Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

Applied physics letters, 1995-03, Vol.66 (12), p.1509-1511

1995

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Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy

Solid state communications, 1999-02, Vol.109 (7), p.439-443

1999

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The growth and properties of group III nitrides

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.892-896

1995

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Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Semiconductor science and technology, 1998-12, Vol.13 (12), p.1469-1471

1998

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Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates

Journal of applied physics, 1995-08, Vol.78 (3), p.1838-1842

1995

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The single-mode rate equations for semiconductor lasers with thermal effects

IMA journal of applied mathematics, 1999-08, Vol.63 (1), p.1-36

1999

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Optically transparent indium-tin-oxide (ITO) ohmic contacts in the fabrication of vertical-cavity surface-emitting lasers

Electronics letters, 1994-02, Vol.30 (4), p.318-320

1994

Volltextzugriff (PDF)

Observation of resonant Raman lines during the photoluminescence of doped GaN

Semiconductor science and technology, 1997-01, Vol.12 (1), p.55-58

1997

Volltextzugriff (PDF)

Recombination lifetime measurements in AlGaAs/GaAs quantum well structures

Semiconductor science and technology, 1994-09, Vol.9 (9), p.1616-1622

1994

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Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)

Semiconductor science and technology, 1996-04, Vol.11 (4), p.538-541

1996

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MBE growth and characterization of magnesium-doped gallium nitride

Semiconductor science and technology, 1998-08, Vol.13 (8), p.927-935

1998

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Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

Semiconductor science and technology, 1997, Vol.12 (1), p.59-63

1997

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Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates

Journal of crystal growth, 1996-09, Vol.166 (1-4), p.597-600

1996

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Characteristics of amorphous silicon staggered-electrode thin-film transistors

Applied physics letters, 1984-07, Vol.45 (2), p.171-173

1984

Volltextzugriff (PDF)

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Group III nitride semiconductors for short wavelength light-emitting devices

Semiconductors and the Information Revolution: Magic Crystals That Made IT Happen

Photoluminescence studies of InGaN/GaN multi-quantum wells

Acceptor binding energy in GaN and related alloys

Photoluminescence of MBE grown wurtzite Be-doped GaN

Effect of strain on GaN exciton spectra

The electron mobility and compensation in n-type GaN

The Hall effect in polycrystalline and powdered semiconductors

Exciton spectra and spin - orbit splitting in GaN epitaxial films

Low-temperature luminescence study of GaN films grown by MBE

Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy

Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy

The growth and properties of group III nitrides

Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates

The single-mode rate equations for semiconductor lasers with thermal effects

Optically transparent indium-tin-oxide (ITO) ohmic contacts in the fabrication of vertical-cavity surface-emitting lasers

Observation of resonant Raman lines during the photoluminescence of doped GaN

Recombination lifetime measurements in AlGaAs/GaAs quantum well structures

Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)

MBE growth and characterization of magnesium-doped gallium nitride

Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates

Characteristics of amorphous silicon staggered-electrode thin-film transistors

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