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Circuit modeling of ultra‐broadband terahertz absorber based on graphene array periodic disks

International journal of numerical modelling, 2020-05, Vol.33 (3), p.n/a

2020

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Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage

IET circuits, devices & systems, 2022-05, Vol.16 (3), p.272-279

2022

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A Wideband and Reconfigurable Filtering Slot Antenna

IEEE antennas and wireless propagation letters, 2016, Vol.15, p.1610-1613

2016

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A Modulation Electric Field Technique to Improve the LD-MOSFET Performance with a P-type Ga2O3 Pocket

SILICON, 2023-06, Vol.15 (9), p.4057-4064

2023

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Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization

Solar energy materials and solar cells, 2020-08, Vol.212, p.110581, Article 110581

2020

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Efficient Sb2(S,Se)3/Zn(O,S) solar cells with high open-circuit voltage by controlling sulfur content in the absorber-buffer layers

Solar energy, 2021-10, Vol.227, p.606-615

2021

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Alternative buffer layers in Sb2Se3 thin‐film solar cells to reduce open‐circuit voltage offset

Solar energy, 2020-05, Vol.202, p.294-303

2020

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High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2842-2845

2012

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Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model

Solar energy, 2019-08, Vol.188, p.1-9

2019

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Tensor-based sparse canonical correlation analysis via low rank matrix approximation for RGB-D long-term person re-identification

Multimedia tools and applications, 2020-05, Vol.79 (17-18), p.11787-11811

2020

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Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism

Current Applied Physics, 2012, 12(5), , pp.1366-1371

2012

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A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model

Journal of the Korean Physical Society, 2017, 71(4), , pp.215-221

2017

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Superior Impact Ionization Rate in Deep Gate LDMOS Devices to Improve the Figure of Merit and Lattice Temperature

Journal of electronic materials, 2024-03, Vol.53 (3), p.1425-1435

2024

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Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for high-power applications

Journal of the Korean Physical Society, 2017, 71(12), , pp.1027-1037

2017

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New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

Current Applied Physics, 2012, 12(5), , pp.1340-1344

2012

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Stacked Single‐Gate Silicon on Insulator 4H‐SiC Junctionless Field‐Effect Transistor with a Buried P‐Type 4H‐SiC Layer

Physica status solidi. A, Applications and materials science, 2022-06, Vol.219 (11), p.n/a

2022

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Superior energy-delay-production in nanoscale field effect diode by embedded doped pockets for digital applications

Journal of materials science. Materials in electronics, 2024, Vol.35 (1), p.77, Article 77

2024

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Improving Specific On-Resistance and Breakdown Voltage in SOI LDMOSs with Several N-Type Windows

Journal of electronic materials, 2023-02, Vol.52 (2), p.1366-1374

2023

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Short-Term Person Re-identification Using RGB, Depth and Skeleton Information of RGB-D Sensors

Iranian journal of science and technology. Transactions of electrical engineering, 2020-06, Vol.44 (2), p.669-681

2020

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Controlled Kink Effect in a Novel High-Voltage LDMOS Transistor by Creating Local Minimum in Energy Band Diagram

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4213-4218

2017

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Manipulating pattern periods via external bias for graphene‐based THz Dual‐Band absorber

Microwave and optical technology letters, 2021-11, Vol.63 (11), p.2769-2775

2021

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Energy-aware routing considering load balancing for SDN: a minimum graph-based Ant Colony Optimization

Cluster computing, 2021-09, Vol.24 (3), p.2293-2312

2021

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Reconfigurable multi-band, graphene-based THz absorber: Circuit model approach

Results in physics, 2020-03, Vol.16, p.102855, Article 102855

2020

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High-performance α-FAPbI3 perovskite solar cells with an optimized interface energy band alignment by a Zn(O,S) electron transport layer

Journal of materials science. Materials in electronics, 2023, Vol.34 (1), p.51, Article 51

2023

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Energy Band Adjustment in a Reliable Novel Charge Plasma SiGe Source TFET to Intensify the BTBT Rate

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5284-5290

2021

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Circuit modeling of ultra‐broadband terahertz absorber based on graphene array periodic disks

Design considerations of a novel Triple Oxide Trench Deep Gate LDMOS to improve self‐heating effect and breakdown voltage

A Wideband and Reconfigurable Filtering Slot Antenna

A Modulation Electric Field Technique to Improve the LD-MOSFET Performance with a P-type Ga2O3 Pocket

Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization

Efficient Sb2(S,Se)3/Zn(O,S) solar cells with high open-circuit voltage by controlling sulfur content in the absorber-buffer layers

Alternative buffer layers in Sb2Se3 thin‐film solar cells to reduce open‐circuit voltage offset

High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model

Tensor-based sparse canonical correlation analysis via low rank matrix approximation for RGB-D long-term person re-identification

Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism

A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model

Superior Impact Ionization Rate in Deep Gate LDMOS Devices to Improve the Figure of Merit and Lattice Temperature

Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for high-power applications

New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

Stacked Single‐Gate Silicon on Insulator 4H‐SiC Junctionless Field‐Effect Transistor with a Buried P‐Type 4H‐SiC Layer

Superior energy-delay-production in nanoscale field effect diode by embedded doped pockets for digital applications

Improving Specific On-Resistance and Breakdown Voltage in SOI LDMOSs with Several N-Type Windows

Short-Term Person Re-identification Using RGB, Depth and Skeleton Information of RGB-D Sensors

Controlled Kink Effect in a Novel High-Voltage LDMOS Transistor by Creating Local Minimum in Energy Band Diagram

Manipulating pattern periods via external bias for graphene‐based THz Dual‐Band absorber

Energy-aware routing considering load balancing for SDN: a minimum graph-based Ant Colony Optimization

Reconfigurable multi-band, graphene-based THz absorber: Circuit model approach

High-performance α-FAPbI3 perovskite solar cells with an optimized interface energy band alignment by a Zn(O,S) electron transport layer

Energy Band Adjustment in a Reliable Novel Charge Plasma SiGe Source TFET to Intensify the BTBT Rate

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