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Features of Electron Transport in Two-Dimensional Quantum Superlattices with the Non-Associative Dispersion Law

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.319-327

2021

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Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

Semiconductors (Woodbury, N.Y.), 2018-09, Vol.52 (9), p.1129-1136

2018

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CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS

Journal of structural chemistry, 2021-04, Vol.62 (4), p.630-640

2021

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Photoconductivity Resonance Tunneling Spectroscopy of the Electron States in the InAs/GaAs Quantum Dot Heterostructures

International journal of nanoscience, 2019-06, Vol.18 (3n04), p.1940023

2019

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Mechanisms of a negative differential conductivity in a short-channel In0.52Ga0.48As/In0.53Al0.47As HEMT

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012020

Orlov, M L

2009

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Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1458-1462

2016

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Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In0.53Ga0.47As/In0.52Al0.48As transistor

Semiconductors (Woodbury, N.Y.), 2009-05, Vol.43 (5), p.652-661

2009

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Influence of the Phase Composition of the Layers Deposited on the Rods of Hydraulic Cylinders on Their Local Corrosion

Materials science (New York, N.Y.), 2015-03, Vol.50 (5), p.740-747

2015

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Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

Physica. E, Low-dimensional systems & nanostructures, 2013-06, Vol.51, p.87-93

2013

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Features of electron transport in relaxed Si/Si1 − x Ge x transistor heterostructures with a high doping level

Semiconductors (Woodbury, N.Y.), 2014-07, Vol.48 (7), p.942-953

2014

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Detection mechanisms of terahertz radiation in a short gate In0.3Ga0.7As/In0.53Al0.47As field effect transistor

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012080

2009

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Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3), p.339-345

Orlov, M. L.

2008

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Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3)

Orlov, M. L.

2008

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Features of electron transport in relaxed Si/Si1 − xGex transistor heterostructures with a high doping level

Semiconductors (Woodbury, N.Y.), 2014, Vol.48 (7), p.942-953

2014

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Current-voltage characteristics and terahertz emission peculiarities of an In0.53Ga0.47As/In0.52Al0.48As HEMT with 2D electron gas

Bulletin of the Russian Academy of Sciences. Physics, 2009, Vol.73 (1), p.107-110

Orlov, M. L.

2009

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Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As transistor

Semiconductors (Woodbury, N.Y.), 2009-05, Vol.43 (5)

2009

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Mechanisms of a negative differential conductivity in a short-channel In 0.52 Ga 0.48 As/In 0.53 Al 0.47 As HEMT

Journal of physics. Conference series, 2009-11, Vol.193, p.12020

Orlov, M L

2009

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Structure and electronic properties of the 3C-SiC/SiGeC/Si(100) heterojunction formed by the vacuum chemical epitaxy method

Journal of structural chemistry, 2014-11, Vol.55 (6), p.1180-1189

2014

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Tunneling and current characteristics of two-miniband superlattice

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1443-1450

2012

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Ways and peculiarities of submillimeter wavelength detection with short-channel field-effect transistors

Semiconductors (Woodbury, N.Y.), 2009-06, Vol.43 (6), p.787-795

2009

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Detection mechanisms of terahertz radiation in a short gate In 0.3 Ga 0.7 As/In 0.53 Al 0.47 As field effect transistor

Journal of physics. Conference series, 2009-11, Vol.193, p.12080

2009

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Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.13-18

2015

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Features of electronic transport in relaxed Si/Si1―XGeX heterostructures with high doping level

Physica. E, low-dimentional systems and nanostructures, 2013, Vol.51, p.87-93

2013

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Anomalous electrical properties of Si/Si1 − x Ge x heterostructures with an electron transport channel in Si layers

Physics of the solid state, 2008-02, Vol.50 (2), p.330-340

2008

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Anomalous electrical properties of Si/Si1 − xGex heterostructures with an electron transport channel in Si layers

Physics of the solid state, 2008-02, Vol.50 (2), p.330-340

2008

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Features of Electron Transport in Two-Dimensional Quantum Superlattices with the Non-Associative Dispersion Law

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS

Photoconductivity Resonance Tunneling Spectroscopy of the Electron States in the InAs/GaAs Quantum Dot Heterostructures

Mechanisms of a negative differential conductivity in a short-channel In0.52Ga0.48As/In0.53Al0.47As HEMT

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In0.53Ga0.47As/In0.52Al0.48As transistor

Influence of the Phase Composition of the Layers Deposited on the Rods of Hydraulic Cylinders on Their Local Corrosion

Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

Features of electron transport in relaxed Si/Si1 − x Ge x transistor heterostructures with a high doping level

Detection mechanisms of terahertz radiation in a short gate In0.3Ga0.7As/In0.53Al0.47As field effect transistor

Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel

Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel

Features of electron transport in relaxed Si/Si1 − xGex transistor heterostructures with a high doping level

Current-voltage characteristics and terahertz emission peculiarities of an In0.53Ga0.47As/In0.52Al0.48As HEMT with 2D electron gas

Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As transistor

Mechanisms of a negative differential conductivity in a short-channel In 0.52 Ga 0.48 As/In 0.53 Al 0.47 As HEMT

Structure and electronic properties of the 3C-SiC/SiGeC/Si(100) heterojunction formed by the vacuum chemical epitaxy method

Tunneling and current characteristics of two-miniband superlattice

Ways and peculiarities of submillimeter wavelength detection with short-channel field-effect transistors

Detection mechanisms of terahertz radiation in a short gate In 0.3 Ga 0.7 As/In 0.53 Al 0.47 As field effect transistor

Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

Features of electronic transport in relaxed Si/Si1―XGeX heterostructures with high doping level

Anomalous electrical properties of Si/Si1 − x Ge x heterostructures with an electron transport channel in Si layers

Anomalous electrical properties of Si/Si1 − xGex heterostructures with an electron transport channel in Si layers

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